2N7272 Search Results

Contextual Info: H a r r is S E M I C O N D U C T O R 2N7272D, 2N7272R 21^7272H REGISTRATION PENDING Currently Available as FRL130 D, R, H November 1994 R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 8A, 100V, RDS(on) = 0.1300 TO-205AF

Contextual Info: 2N7272R3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)8 I(DM) Max. (A) Pulsed I(D)5 @Temp (øC)100 IDM Max (@25øC Amb)24 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)-55

2N7289

Abstract: 2N7308 2N7331
Contextual Info: Tactical and Strategic Level Selections Radiation Hardened MOSFETs N-Channei TO-3 TO-39 TO-257 TO-254 TO-258 INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL FRM130D FRM130R FRM130H 2N7271 FRL130D FRL130R FRL130H 2N7272 . . FRS130D FRS130R

2N7272R

Contextual Info: m W HARRIS SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRL130 D, R, H 2N7272D, 2N7272R 2N7272H Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 8A, 100V, RDS(on) > 0.180Q TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

2N7272R

Abstract: 2E12 2N7272D 2N7272H FRL130
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL130 D, R, H 2N7272D, 2N7272R 2N7272H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 8A, 100V, RDS(on) = 0.180Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: 4302271 D045b7b fifl4 H H A S ££ H A R R IS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL130 D, R, H) 2N7272D, 2N7272R 2N7272H Radiation Hardened N-Channel Power MOSFETs December 1992 Features • 8A. 100V, RDS(on) • 0.180«

Contextual Info: HARRIS SEniCOND SECTOR SbE ]> • 43Q2271 00422'*! lbT H H A S Radiation Hardness Assurance Program N-C H AN N EL RAD HARD PO W ER MO SFETS INITIAL RATINGS Id s rDS ON 126X182 3 FRM230D 126X182 3 100 14 0.18 2 -4 200 8 0.50 2 -4 FRM234D 126X182 3 250 7 0.70

Contextual Info: Pre-Post Radiation Characteristics N-Channel P O S T 10K R A D O R P O S T 100K R A D SI R A T IN G S b (A) R DS(ON) V g S(TH) B V q ss PART NUM BER (£1) 100 2N7271 204AA 14 0.180 R A T ED 200 250 500 P O S T 1M R A D (SI) R A T IN G S F*d s (OM) V GS(TH)

power BJT pnp

Abstract: JANS2N7373 NPN Power BJT 100v JANS2N5154 JANS2N5153 power transistor bjt 100 a 2N7395 smps 500 watt 500 WATT smps JANS2N7372
Contextual Info: Fall 1998/Winter 1999 Bipolar Transistors in Space bipolar chip types that are MIL qualified in older TO-3’s and have a radiation tolerant structures, can be put in more reliable TO-254’s. Examples of this are the 2N6338 NPN and 2N6437(PNP) that are complementary 100V, 200W

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:

FRL-230

Abstract: 2N7272 2N7281 2N7275 2N7278 frl130,
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 November 2004. MIL-PRF-19500/604B 30 July 2004 SUPERSEDING MIL-PRF-19500/604A 21 June 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED