2N5551C Search Results
2N5551C Datasheets (10)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 2N5551C | Korea Electronics | TRANS GP BJT NPN 160V 0.6A 3TO-92 | Original | 65.54KB | 2 | ||
| 2N5551C | Korea Electronics | High Voltage Transistor | Scan | 179.65KB | 2 | ||
| 2N5551C | Korea Electronics | EPITAXIAL PLANAR NPN TRANSISTOR | Scan | 164.04KB | 2 | ||
| 2N5551CBU | Fairchild Semiconductor | NPN General Purpose Amplifier | Original | 69.52KB | 5 | ||
| 2N5551CBU | Fairchild Semiconductor | Transistors (BJT) - Single, Discrete Semiconductor Products, AMP GP NPN 160V 600MA TO-92 | Original | 9 | |||
| 2N5551CN | AUK | NPN Silicon Transistor | Original | 253.33KB | 4 | ||
| 2N5551CSM | Semelab | Bipolar NPN Device in a Hermetically Sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications | Original | 10.32KB | 1 | ||
| 2N5551CTA | Fairchild Semiconductor | NPN General Purpose Amplifier | Original | 69.52KB | 5 | ||
| 2N5551CTA | Fairchild Semiconductor | Transistors (BJT) - Single, Discrete Semiconductor Products, AMP GP NPN 160V 600MA TO-92 | Original | 9 | |||
| 2N5551CYTA | Fairchild Semiconductor | Transistors (BJT) - Single, Discrete Semiconductor Products, AMP GP NPN 160V 600MA TO-92 | Original | 9 |
2N5551C Price and Stock
Central Semiconductor Corp CP336V-2N5551-CT20- Waffle Pack (Alt: CP336V-2N5551-CT20) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CP336V-2N5551-CT20 | Waffle Pack | 20 |
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Get Quote | ||||||
Central Semiconductor Corp CP336V-2N5551-CT- Waffle Pack (Alt: CP336V-2N5551-CT) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CP336V-2N5551-CT | Waffle Pack | 6 Weeks | 400 |
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Get Quote | |||||
2N5551C Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2N5551C
Abstract: SAT12
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OCR Scan |
2n5551c100mhz250//asat12 | |
2N5551 SOT23
Abstract: 2N5551 2N5551CSM
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Original |
2n5551csm2n55512n5551 sot23 | |
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Contextual Info: 2N5551CSM HIGH VOLTAGE NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 3 2 • HERMETIC CERAMIC SURFACE MOUNT |
Original |
2n5551csm2n5551 | |
2N5551CContextual Info: SEMICONDUCTOR TECHNICAL DATA 2N5551C EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage. : VCbo=180V, VCeo=160V • Low Leakage Current. : ICBo=50nA Max. V Cb=120V • Low Saturation Voltage. |
OCR Scan |
2n5551c100mhz250//a300//s | |
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Contextual Info: 2N5551CSM HIGH VOLTAGE NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 3 2 • HERMETIC CERAMIC SURFACE MOUNT |
Original |
2n5551csm2n5551 | |
2N5551CContextual Info: SEMICONDUCTOR 2N5551C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES ᴌHigh Collector Breakdwon Voltage : VCBO=180V, VCEO=160V N E K ᴌLow Leakage Current. : ICBO=50nA Max. , VCB=120V |
Original |
2n5551c100mhz | |
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Contextual Info: 2N5551CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006) |
Original |
2n5551csm0/10m17-jul-02 | |
5551C
Abstract: 2N 5551C datasheet 2N5551C
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Original |
2n5551c5551c2n 5551c datasheet | |
2N5551C
Abstract: 2N5551CN
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Original |
2n5551cn2n5551co-92nksd-t0c061-000 | |
2N5551CContextual Info: SEMICONDUCTOR 2N5551C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V N E K Low Leakage Current. G D J : ICBO=50nA Max. , VCB=120V |
Original |
2n5551c100mhz | |
2N5551CSMContextual Info: 2N5551CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006) |
Original |
2n5551csm0/10m2-aug-02 | |
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Contextual Info: SEMICONDUCTOR 2N5551C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V N E K Low Leakage Current. G D J : ICBO=50nA Max. , VCB=120V |
Original |
2n5551c100mhz | |
WSP-401M
Abstract: BD103 dms-200d bd102 transisTOR C123 2N5401C-Y DG04 rsb7 sk101 S1D2514X01
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Original |
s1d2514x0132-dip-600as1d2514x01-d0b01n4148+10 | |
2N5551B
Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU
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2n5551mmbt5551ot-232n5551yiubu+13 | |
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
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hig86-755-3679515alternator diode 1776 b2az marking transistor sot-23smd sot23 transistor mark y2+7 | |
khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
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Original |
2n2904ebc859kds135s2n2906e+16 | |
CHINA TV FBT
Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
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Original |
o-92mkrc102mkrc112mo-92l+16 | |
KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
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Original |
2n2904ebc859kds135s2n2906e+16 | |
MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
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Original |
mn1280kgt50n60kdabc547 smd transistorkia1117af+6 | |
2N5551B
Abstract: tr 5551 2N5551 SOT23 2n5551 BR 5551 2N5551 circuit 2N5551BU BR N 5551
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Original |
2n5551-mmbt55512n5551ot-23+7 | |
WSP-401M
Abstract: DMS-200D osd character 401M osd font RG03 transisTOR C123 rsb7 12v amp diagram QR01
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Original |
s1d2502b0132-dip-600as1d2502b01-d0b0sk102+12 | |
OSD icContextual Info: S1D2502A Preliminary VIDEO AMP MERGED OSD PROCESSOR FOR MONITORS VIDEO AMP MERGED OSD PROCESSOR 32-DIP-600A The S1D2502A is a very high frequency video amplifier & wide range OSD processor 1 chip system with I2C Bus control used in monitors. It contains 3 matched R/G/B video |
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s1d2502a32-dip-600as1d2502a-d0b0175mhz+5 | |
transisTOR C123
Abstract: bd102 KB2502 KB2514 fly-back WSP-401M brt7
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Original |
kb251432-dip-600a1n41481ss244+6 | |
Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
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Original |
2c4152c4252c4442c746+16 | |