29F04 Search Results

flash hamming ecc

Abstract: 29F0408RP radiation solid state recorder
Contextual Info: SPACE ELECTRONICS INC. FLASH MEMORY S PACE PRODUCTS 29F0408RP DESCRIPTION: • Single 5.0V supply • Organization: - Memory cell array: 4M + 128k bit x 8bit - Data register: (512 + 16)bit x 8bit • Automatic program and erase - Page program: (512 + 16)Byte

29F0429-0T0

Contextual Info: Part Curves Page 1 of 3 29F0429-0T0 http://www.steward.com/web_part_no.asp?line=EMC / EMI Board Level and Cable Core . 2/25/2004 Part Curves Page 2 of 3 Drawing Figure # Figure Number 6 Electrical Characteristics http://www.steward.com/web_part_no.asp?line=EMC / EMI Board Level and Cable Core . 2/25/2004

Contextual Info: -Preliminary- 29F0408RP FLASH MEMORY RADIATION HARDENED FEATURES: DESCRIPTION: • Single 5.0 volt Supply • Organization - Memory Cell Array: 4M + 128K bit x 8bit - Data Register: (512 + 16)bit x8bit • Automatic Program and Erase - Page Program: (512 + 16)Byte

sample code read the flash memory manufacture id

Abstract: 29F0408
Contextual Info: PRELIMINARY 29F0408 32 Megabit 4M x 8-Bit Flash Memory FEATURES: DESCRIPTION: • Single 5.0 V supply • Excellent Single Event Effect • - SELTH: > 60 MeV/mg/cm2 Maxwell Technologies’ 29F0408 high-performance flash memory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash

29F0429-0T0

Contextual Info: Part Curves Page 1 of 4 Print The Following: b c d e f g Drawings b c d e f g Characteristics b c d e f g Impedance Curves c d e f g Land Patterns c d e f g Soldering Conditions 29F0429-0T0 g Equivalent Circuits c d e f Display Request a PDF for the print

29F0418-0SR-10

Abstract: 29F0418-OSR-10 29F0418
Contextual Info: 29F0418-0SR-10 PHYSICAL DIMENSIONS: A 6.10 [ . 2 4 0 ] B 4 .5 0 [.1 7 7 ] UNCONTROLLED DOCUMENT ELECTRICAL CHARACTERISTICS: ± 0.13 [ . 0 0 5 ] + 0 .0 8 [ . 0 0 3 ] - 0.10 [ . 0 0 4 ] B1 7 .0 4 [ . 2 7 7 ] MAX C 2 .9 2 [.11 5 ] ± 0 .0 8 [ . 0 0 3 ] C1 3.56 [.1 4 0 ]

Am29F040

Contextual Info: Data Sheet 124376 FlashLite Byte-W ide M em ory C a rd — A M D A M 29F040 JUNE 95 REV A Product Features • Thin Profile— PCMCIA Type I Package, 3.3 mm Thick ■ Memory Capacity of 512 KByte, based on AMD 29F040 Flash Technology ■ Eight Equal Size Sectors of 64 KBytes each

atmel 718

Abstract: 28SF040 sst flash memory amd 29f040 29C040 29F040 SST28SF040
Contextual Info: SST28SF040–Compatibility Considerations Between 4 Megabit Flash Products Application Note INTRODUCTION The SST 28SF040, Atmel 29C040 and AMD 29F040 are not 100% Program and Erase compatible for several reasons. 1. SST and AMD devices require a separate Erase

H0428

Contextual Info: 29F0428-0T0-10 ELECTRICAL CHARACTERISTICS: Z @ 100MHz PHYSICAL DIMENSIONS: + A 10.88 [.4 2 8 ] + B 10.88 [.4 2 8 ] Q 0.15 [.0 0 6 ] 0.15 [.0 0 6 ] + 0 .2 0 [.0 0 8 ] + 0.13 [.0 0 5 ] + 0 .0 5 [.0 0 2 ] C 10.57 [.4 1 6 ] D 7 .6 2 [.3 0 0 ] E 2 .5 4 [.1 0 0 ]

29F0430-2SR

Contextual Info: Part Curves Page 1 of 3 29F0430-2SR http://www.steward.com/web_part_no.asp?line=EMC / EMI Board Level and Cable Core . 2/25/2004 Part Curves Page 2 of 3 Drawing Figure # Figure Number 2 Electrical Characteristics http://www.steward.com/web_part_no.asp?line=EMC / EMI Board Level and Cable Core . 2/25/2004

29F0428-0T0

Contextual Info: Part Curves Page 1 of 3 29F0428-0T0 http://www.steward.com/web_part_no.asp?line=EMC / EMI Board Level and Cable Core . 2/25/2004 Part Curves Page 2 of 3 Drawing Figure # Figure Number 6 Electrical Characteristics http://www.steward.com/web_part_no.asp?line=EMC / EMI Board Level and Cable Core . 2/25/2004

1N914

Abstract: M29F040 PLCC32 TSOP32 w431 w631
Contextual Info: S G S -T H O M S O N i[Ui EïïïïM]D(ES M 29F040 4 Mb (512K x 8, Block Erase SING LE SUPPLY FLASH M EM O RY • 5 V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 10ps typical ■ ERASE TIME

Contextual Info: 29F0428-0T0-10 UNCONTROLLED DOCUMENT ELECTRICAL CHARACTERISTICS: Z @ 100MHz PHYSICAL DIMENSIONS: DCR n ( Q ) A 10.88 [.4 2 8 ] ± 0.15 [.0 0 6 ] B 10.88 [.4 2 8 ] ± 0.15 [.0 0 6 ] C 10.57 [.4 1 6 ] + D 7.62 [.3 0 0 ] ± 0.13 [.0 0 5 ] E 2.54 [.1 0 0 ]

29F0418-0SR-10

Abstract: DSA0043501
Contextual Info: 29F0418-0SR-10 Ω UNCONTROLLED DOCUMENT Ω Ω Pb Z R XL Steward

H0431

Abstract: 29F0430-4SR-10 29F0430
Contextual Info: 29F0430-4SR-10 UNCONTROLLED DOCUMENT ELECTRICAL CHARACTERISTICS: PHYSIC AL DIMENSIONS: A B 1 0 .8 7 [ . 4 2 8 ] + 1 0 .8 7 [ . 4 2 8 ] + B 1 1 3 .4 6 [.5 3 0 ] C 8 .8 9 [.3 5 0 ] Cl 9 .6 5 [.3 8 0 ] D 7 .6 2 [.3 0 0 ] E 2 .5 4 [. 1 0 0 ] Ti t2 2 .6 4 [. 1 0 4 ]

27C32

Abstract: 24c04 Atmel 27c301 atmel 24c02 39SF040 24C08 ATMEL dataman s4 27C101 Xicor 28256 eeprom 2864a
Contextual Info: Dataman S4 Programmer Device Support List Library Version 2.84 May 2001 8 Bit EPROMS, EEPROMS & Flash ROMS AMD 27010 2716B 2732B 27C010 27C100 27C512L 27HB010 28C256 28F256 29F002NBB 29F040 9716 9864-25 27128 27256 27512 27C020 27C128 27C64 2817A 28F010 28F512

Contextual Info: A 10.87 [.428] B 10.87 [.428] B 1 13.46 [.530] C 6.35 [.250] Ci D 7.11 ’•280] E 2.54 [.100] 7.62 [.300] UNCONTROLLED DOCUMENT 29F0430-2SR-10 P H YSIC A L DIMENSIONS: + 0.15 [.006] + 0.15 [.006] ELECTRICAL CHARACTERISTICS: a Z @ 100M H z MAX + 0.10 [.004]

29VF040

Abstract: 29VF040-15 29VF040-12 29VF040-10
Contextual Info: TMS29LF040, TMS29VF040 524288 BY 8-BIT FLASH MEMORIES SMJSB25C - SEPTEMBER 199S - REVISED NOVEMBER \m Single Power Supply 3.3 V ± 0.3 V - '29LF040 2.7 V to 3.6 V - ’29VF040 5 V ± 10% - See 29F040 Data sheet Literature Number SMJS820 Organization. . . 524288 By 8 Bits

Contextual Info: 29F0408 32 Megabit 4M x 8-Bit Flash Memory FEATURES: DESCRIPTION: • Single 5.0 V supply • Excellent Single Event Effect • - SELTH: > 60 MeV/mg/cm2 Maxwell Technologies’ 29F0408 high-performance flash memory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash

Contextual Info: 29F0408 32 Megabit 4M x 8-Bit Flash Memory FEATURES: DESCRIPTION: • Single 5.0 V supply • Excellent Single Event Effect • - SELTH: > 60 MeV/mg/cm2 Maxwell Technologies’ 29F0408 high-performance flash memory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash

29F0430-4SR-10

Abstract: 29F04
Contextual Info: 29F0430-4SR-10 UNCONTROLLED DOCUMENT Ω Pb Ω 400 Ω R 200 Z XL 1 10 Z 100 R 1000 X L Steward

00JJ

Abstract: M29F040 PLCC32 TSOP32 31AY
Contextual Info: SGS-THOMSON OMDGKMDI[LI uTS IRQDOS M 29F040 4 Mb 512K x 8, Block Erase SING LE SUPPLY FLASH M EM O RY • 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 10jxs typical ■ ERASE TIME

29F0428-OTO-10-C-2

Abstract: 29F0428-OTO-10 43961A 29F0428-0T0-10
Contextual Info: 29F0428-0T0-10 UNCONTROLLED DOCUMENT E LE C T R IC A L C H A R A C TER ISTIC S: Z 100MHz P H Y S IC A L DIMENSIONS: A 10.88 [.4 2 8 ] ± 0.15 [.0 0 6 ] B 10.88 [.4 2 8 ] Í 0.15 [.0 0 6 ] C 10.57 [.4 16 ] ± 0 .2 0 [.0 0 8 ] D 7 .6 2 [.3 0 0 ] ± 0.13 [.0 0 5 ]

29F0418-1SR-10

Abstract: 29F0418-1 43961A
Contextual Info: PHYSICAL DIMENSIONS: A 6.10 [.2 4 0 ] + 0.13 [.0 0 5 ] B 4 .5 0 [.1 7 7 ] + 0 .0 8 [.0 0 3 ] 0.10 [.0 0 4 ] B1 7 .0 4 [.2 7 7 ] C 4.19 [.1 6 5 ] C1 4 .8 3 [.1 9 0 ] D 2 .2 4 [.0 8 8 ] E 1.27 [.0 5 0 ] + 29F0418-1SR-10 ELECTRICAL CHARACTERISTICS: MAX + 0.10 [.0 0 4 ]