29 TRANSISTOR Search Results

Q62702-C2136

Abstract: Q62702-C2137
Contextual Info: NPN Silicon Darlington Transistors BCP 29 BCP 49 For general AF applications ● High collector current ● High current gain ● Complementary types: BCP 28/48 PNP ● Type Marking Ordering Code (tape and reel) BCP 29 BCP 49 BCP 29 BCP 49 Q62702-C2136 Q62702-C2137

Contextual Info: SIEMENS NPN Silicon Darlington Transistors • • • • BCP 29 BCP 49 For general AF applications High collector current High current gain Complementary types: BCP 28/48 PNP Type Marking Ordering Code (tape and reel) BCP 29 BCP 49 BCP 29 BCP 49 Q62702-C2136

993 395 pnp npn

Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q
Contextual Info: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10

XC3S400-4PQ208C

Abstract: XC3S500 XC3S400-4PQ208 XCN08011 XC3S1000-4FT256C 3S400 L02P UG130 RAMB16 L28n
Contextual Info: PRODUCT NOT RECOMMENDED FOR NEW DESIGNS 1 Spartan-3 FPGA Family Data Sheet DS099 October 29, 2012 Module 1: Introduction and Ordering Information DS099 v3.0 October 29, 2012 Product Specification Module 4: Pinout Descriptions DS099 (v3.0) October 29, 2012

xc3s500e vq100

Abstract: m1l43 XC3S250E TQ144 STARTER KIT BOARD XC3S500EVQ100 Xilinx Parallel Cable IV spartan-3 XC3S500E-VQ100 SPARTAN 3e 1600e XC3S250E vqg100 XC3S500E FGG320
Contextual Info: PRODUCT NOT RECOMMENDED FOR NEW DESIGNS 1 Spartan-3E FPGA Family Data Sheet DS312 October 29, 2012 Product Specification Module 1: Introduction and Ordering Information Module 3: DC and Switching Characteristics DS312 4.0 October 29, 2012 DS312 (4.0) October 29, 2012

c1237

Abstract: siemens CIB C1236
Contextual Info: NPN Silicon Darlington Transistors • • • • BCP 29; BCP 49 For general AF applications High collector current High current gain C om plem entary types: BCP 28/48 PNP Type M a rk in g O rd e rin g c o d e (1 2 -m m ta p e ) P acka ge * BCP 29 BCP 29

P621 1k

Abstract: UL1557 HCPL4504 AC200V AC2500 P610 P621 6MBP75RTJ060 p621 b transistor p621
Contextual Info: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP75RTJ060 Spec. No. : MS6M 0673 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 29 ‘03 N.Matsuda Jan. 29 ‘03 Nishiura Jan.-29 -‘03 K.Yamada T.Fujihira MS6M 0673 a 1 22 H04-004-07 Revised Records Date

P621

Abstract: P621 1k AC200V AC2500 HCPL4504 P610 all transistor P621 6MBP50
Contextual Info: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP50RTJ060 Spec. No. : MS6M 0671 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 29 ‘03 N.Matsuda Jan. 29 ‘03 Nishiura Jan.-29 -‘03 K.Yamada T.Fujihira MS6M 0671 a 1 22 H04-004-07 Revised Records Date

6MBP150RTJ060

Abstract: AC200V AC2500 HCPL4504 P610 P621 6mbp150 all transistor P621 P621 ic
Contextual Info: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP150RTJ060 Spec. No. : MS6M 0677 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 29 ‘03 N.Matsuda Jan. 29 ‘03 Nishiura Jan.-29 -‘03 K.Yamada T.Fujihira MS6M 0677 a 1 22 H04-004-07 Revised Records Date

P621

Abstract: IC P621 p621 b 18 p621 P621 capacitor 6MBP100RTJ060 AC200V AC2500 HCPL4504 P610
Contextual Info: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP100RTJ060 Spec. No. : MS6M 0675 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 29 ‘0 3 N.Matsuda Jan. 29 ‘0 3 Nishiura Jan.-29 -‘0 3 K.Yamada T.Fujihira MS6M 0675 a 1 22 H04-004-07 Revised Records

LD-15713-1

Abstract: LQ150X1LGN2A THC63LVDM83R BLOCK DIAGRAM FOR LPG GAS DETECTION LD-15713A BHSR-02VS-1 DF14-2628SCFA KTBE24MSTF Stanley 1050 circuit diagram fluorescent lamp transistor Electronic ballast
Contextual Info: PRODUCT SPECIFICATIONS AVC Liquid Crystal Displays Group LQ150X1LGN2A TFT-LCD Module Spec. Issue Date: Oct. 29, 2003 No: LD-15713A RECORDS OF REVISION LQ150X1LGN2A SPEC No. DATE No. LD-15713 Jul. 29. 2003 LD-15713A Oct. 29. 2003 SUMMARY REVISED NOTE PAGE 1st Issue

P621

Abstract: 431w transistor P621 capacitor 431W p621 b 6MBP150RTJ060 AC200V AC2500 HCPL4504 P610
Contextual Info: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP150RTJ060 Spec. No. : MS6M 0677 Fuji Electric Co.,Ltd. Matsumoto Factory Jan.29 ‘ 03 N.Matsuda Jan.29 ‘ 03 Nishiura Jan. 29‘ 03 K.Yamada T.Fujihira MS6M 0677 a 1 22 H04-004-07 Revised Records Date

XQ2VP40-5FG676N

Abstract: XQ2VP405FF1152N XQ2VP40-5FF1152 XQ2VP40-5FF1152N 5ff11 p624 wireless encrypt BLVDS-25
Contextual Info: 1 R DS136 v1.0 November 29, 2006 QPro Virtex-II Pro 1.5V Military Temp Platform FPGAs Complete Data Sheet Preliminary Product Specification Module 1: Introduction and Overview Module 3: DC and Switching Characteristics DS136-1 (v1.0) November 29, 2006 DS136-3 (v1.0) November 29, 2006

2929 transistor

Abstract: MMBTA63 MMBTA64 t2929
Contextual Info: SAMSUNG SEMICONDUCTOR D | 7^4,4142 0007300 3 | INC MMBTA64 PNP EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

VCO 9GHZ 10GHZ

Abstract: RF TRANSISTOR 10GHZ C166 JESD22-A114 NF50 Germanium Transistor
Contextual Info: BFP720ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

BFP640ESD

Abstract: RF TRANSISTOR 10GHZ C166 JESD22-A114 NF50 Germanium Transistor
Contextual Info: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

Contextual Info: BFP450 Linear Low Noise Silicon Bipolar RF Transistor Datasheet Revision 1.2, 2013-07-29 RF & Protection Devices Edition 2013-07-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BFP720FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

gummel poon model parameter HBT

Abstract: 726-BFP640FESDH6327 Germanium Transistor
Contextual Info: BFP640FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

RF TRANSISTOR 10GHZ

Abstract: BFP740ESD NXP Bluetooth IC C166 JESD22-A114 NF50 vxWORKS Germanium Transistor gummel transistor RF S-parameters
Contextual Info: BFP740ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

BFP740FESD

Abstract: gummel poon model parameter HBT C166 JESD22-A114 NF50 2.4ghz lnb Germanium Transistor transistor RF S-parameters infineon RF
Contextual Info: BFP740FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

Contextual Info: BFP640FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

XPOSYS

Abstract: gummel poon model parameter HBT X-GOLD colossus diodes transistor marking k2 dual Trimble Germanium Transistor agilent ads SENSONOR 2.4ghz lnb
Contextual Info: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

2929 transistor

Abstract: MMBT6427 MMBTA14 SOT-23 J
Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBTA14 14E D | 7^4142 OGt^eT! t | NPN EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage . Collector-Emitter Voltage Emitter-Base Voltage