28NC Search Results

DSA0021811

Contextual Info: QFET N-CHANNEL FQB7N60, FQI7N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ.

Contextual Info: QFET N-CHANNEL FQA9N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ. • Extended Safe Operating Area

Contextual Info: QFET N-CHANNEL FQB9N50, FQI9N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ.

FQPF7N60

Contextual Info: QFET N-CHANNEL FQPF7N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ. • Extended Safe Operating Area

FDB16AN08A0

Abstract: FDP16AN08A0 260uH
Contextual Info: FDP16AN08A0 / FDB16AN08A0 N-Channel UltraFET Trench MOSFET 75V, 58A, 16mΩ Features Applications • r DS ON = 13mΩ (Typ.), VGS = 10V, ID = 58A • 42V Automotive Load Control • Qg(tot) = 28nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge

SFP7N60

Abstract: 28nc
Contextual Info: SFP7N60 SemiWell Semiconductor N-Channel MOSFET Features RDS on (Max 1.2 Ω )@VGS=10V • Gate Charge (Typical 28nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ ■ 2. Drain { Symbol

IAR10

Abstract: STK1040 ksd 180 STK1040P
Contextual Info: STK1040P Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=400V Min. • Low Crss : Crss=12pF(Typ.) • Low gate charge : Qg=28nc(Typ.) • Low RDS(on) :RDS(on)=0.53Ω(Max.) Ordering Information Type NO.

SFF7N60

Abstract: N-Channel 600V MOSFET
Contextual Info: SFF7N60 SemiWell Semiconductor N-Channel MOSFET Features RDS on (Max 1.2 Ω )@VGS=10V • Gate Charge (Typical 28nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ ■ ● ◀ 1. Gate{

STK0850F

Abstract: STK0850
Contextual Info: STK0850F Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=500V Min. • Low Crss : Crss=12pF(Typ.) • Low gate charge : Qg=28nC(Typ.) • Low RDS(on) :RDS(on)=0.8Ω(Max.) Ordering Information Type NO.

stk0760

Abstract: stk0760 equivalent STK0760F mosfet stk0760 IDM28 Advanced Power MOSFET DSA0026547 VDS300V
Contextual Info: STK0760F Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=600V Min. Low Crss : Crss=12pF(Typ.) Low gate charge : Qg=28nC(Typ.) Low RDS(on) :RDS(on)=1.2Ω(Max.) Ordering Information Type NO.

buss 2A

Abstract: IRF6620 IRF6618 IRF6618TR1
Contextual Info: PD - 95823 IRF6620/IRF6620TR1 HEXFET Power MOSFET l VDSS RDS on max Qg(typ.) l 20V 2.7mΩ@VGS = 10V 3.6mΩ@VGS = 4.5V 28nC Application Specific MOSFETs Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm)

FDD10AN06A0

Abstract: 42e8
Contextual Info: FDD10AN06A0 N-Channel PowerTrench MOSFET 60V, 50A, 10.5mΩ Features Applications • r DS ON = 9.4mΩ (Typ.), V GS = 10V, ID = 50A • Motor / Body Load Control • Qg(tot) = 28nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management

FQB7N60

Abstract: FQI7N60 LS74A 74a diode
Contextual Info: QFET N-CHANNEL FQB7N60, FQI7N60 FEATURES BV dss = 600V Advanced New Design R DS ON = 1 Avalanche Rugged Technology In = 7.4A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 28nC (Typ.)

STK1040F

Contextual Info: STK1040F Semiconductor Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features PIN Connection • High Voltage: BVDSS=400V Min. • Low Crss : Crss=12pF(Typ.) • Low gate charge : Qg=28nc(Typ.) • Low RDS(on) :RDS(on)=0.53Ω(Max.) D G Type No.

STK1040

Abstract: MARKING QG 6 PIN
Contextual Info: STK1040P Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=400V Min. • Low Crss : Crss=12pF(Typ.) • Low gate charge : Qg=28nc(Typ.) • Low RDS(on) :RDS(on)=0.53Ω(Max.) Ordering Information Type NO.

Contextual Info: FDS3672 N-Channel PowerTrench MOSFET 100V, 7.5A, 22mΩ Features Applications • r DS ON = 19mΩ (Typ.), VGS = 10V, ID = 7.5A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge

Contextual Info: CSD20060–Silicon Carbide Schottky Diode VRRM = 600V Zero Recovery Rectifier IF = 20A Qc = 28nC Features • • • • • • • Package 600 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior

Contextual Info: CSD10060–Silicon Carbide Schottky Diode VRRM = 600V Zero Recovery Rectifier IF = 10A Qc = 28nC Features • • • • • • • Package 600 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior

FDP3672

Abstract: diode marking 41a on semiconductor marking n6
Contextual Info: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge

FQB8N60C

Abstract: FQB8N60CF FQB8N60CFTM
Contextual Info: QFET FQB8N60CF TM 600V N-Channel MOSFET Features Description • 6.26A, 600V, RDS on = 1.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 28nC)

Contextual Info: QFET N-CHANNEL FQP9N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ. • Extended Safe Operating Area

Contextual Info: QFET N-CHANNEL FQA7N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ. • Extended Safe Operating Area

Contextual Info: QFET N-CHANNEL FQAF9N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ. • Extended Safe Operating Area

WFP7N60

Contextual Info: WFP7N60 Wisdom Semiconductor N-Channel MOSFET Features RDS on (Max 1.2 Ω )@VGS=10V • Gate Charge (Typical 28nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ ■ 2. Drain { Symbol