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    FQB8N60CFTM Search Results

    FQB8N60CFTM Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FQB8N60CFTM
    		Fairchild Semiconductor 600V N-Channel MOSFET Original PDF 720.9KB 8
    FQB8N60CFTM
    		Fairchild Semiconductor 600V N-Channel MOSFET Original PDF 656.92KB 9
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    FQB8N60CFTM Price and Stock

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    onsemi FQB8N60CFTM

    MOSFET N-CH 600V 6.26A D2PAK
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    DigiKey FQB8N60CFTM Reel
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    Verical FQB8N60CFTM 1,332 221
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    Rochester Electronics LLC FQB8N60CFTM

    MOSFET N-CH 600V 6.26A D2PAK
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    DigiKey FQB8N60CFTM Bulk 176
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    Fairchild Semiconductor Corporation FQB8N60CFTM

    Power Field-Effect Transistor, 6.26A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    Rochester Electronics FQB8N60CFTM 2,696 1
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    FQB8N60CFTM Datasheets Context Search

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    FQB8N60C

    Abstract: FQB8N60CF FQB8N60CFTM
    Contextual Info: QFET FQB8N60CF TM 600V N-Channel MOSFET Features Description • 6.26A, 600V, RDS on = 1.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 28nC)


    Original     		FQB8N60CF FQB8N60CF FQB8N60C FQB8N60CFTM PDF

    FQB8N60CF

    Abstract: FQB8N60CFTM
    Contextual Info: TM FRFET FQB8N60CF 600V N-Channel MOSFET Features Description • 6.26A, 600V, RDS on = 1.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 28nC)


    Original     		FQB8N60CF FQB8N60CF FQB8N60CFTM PDF