28MAR2003 Search Results

K 2411 equivalent

Abstract: M48T18 M4T28-BR12SH M4T32-BR12SH SOH28 DS1643 M48T08 M48T08Y
Contextual Info: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

a20 Schottky diode st

Abstract: M48Z2M1V M48Z2M1Y up 5135 Zeropower
Contextual Info: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of

Contextual Info: Product Data Sheet Integrated Circuit Systems, Inc. M670 VOLTAGE CONTROLLED SAW OSCILLATOR FOUT 4 5 6 VCC The M670 is a VCSO Voltage Controlled SAW Oscillator frequency source for low-jitter clock generation. Its integrated SAW (surface acoustic wave) delay line provides

Contextual Info: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

ST M48T02

Contextual Info: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated, ultra low power SRAM, real-time clock, and power-fail control circuit BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

vogt transformer 406 69

Abstract: VOGT 406 69 sck-053 transformer ee28 THERMISTOR, sck-053 545 01 122 00 vogt sck053 vogt 406 47 vogt 406 59 vogt transformer 406
Contextual Info: Title Engineering Prototype Report for EP-33 – 45 W LCD Monitor External Power Supply using TOP247Y TOPSwitch-GX Specification 90 - 265 VAC Input, 12 V, 3.75 A, 45 W Output Applications LCD Monitor / TV and Generic External Adapter Author Power Integrations Applications Department

DS1643

Abstract: M48T08 M48T08Y M48T18 M4T28-BR12SH M4T32-BR12SH SOH28 M48T
Contextual Info: M48T08 M48T08Y, M48T18 5V, 64Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated ultra low power sram, real time clock, power-fail control circuit, and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

M48T08

Abstract: M48T08Y M48T18 DS1643 M4T28-BR12SH M4T32-BR12SH SOH28
Contextual Info: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

e3 2410

Abstract: DS1642 M48T02 M48T12 14-MAY-2001
Contextual Info: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, and power-fail control circuit ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

DS1642

Abstract: M48T02 M48T12
Contextual Info: M48T02 M48T12 5.0V, 16 Kbit 2Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real time clock, and power-fail control circuit ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds ■

M48T128Y

Abstract: STMicroelectronics
Contextual Info: M48T128Y 5.0 V, 1 Mbit 128 Kb x 8 TIMEKEEPER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded year, month, day, date, hours, minutes, and seconds

M48T08

Abstract: STMicroelectronics K 2411 equivalent
Contextual Info: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

up 5135

Contextual Info: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of

a20 Schottky diode st

Contextual Info: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of

M48T02

Abstract: STMicroelectronics
Contextual Info: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, and power-fail control circuit ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

Contextual Info: M48T128Y 5.0 V, 1 Mbit 128 Kb x 8 TIMEKEEPER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded year, month, day, date, hours, minutes, and seconds

DS1642

Abstract: M48T02 M48T12 AN-924
Contextual Info: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real time clock, and power-fail control circuit ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds