28FEB0 Search Results

CTL5239-056-021

Contextual Info: 501-380 Qualification Test Report 28Feb06 Rev A Dual Beam Shunt 1. INTRODUCTION 1.1. Purpose | Testing was performed on the Tyco Electronics Dual Beam Shunt to determine its conformance to the requirements of Product Specification 108-1674 Rev. O. 1.2. Scope

Contextual Info: 108-1674 Product Specification 28Feb06 Rev A Dual Beam Shunt 1. SCOPE 1.1. Content | This specification covers the performance, tests and quality requirements for the Tyco Electronics dual beam shunt connector. This connector is a separable electrical connection device for mating with 2,

Tyco 567

Abstract: LR7189
Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. — »— LOC ALL RIGHTS RESERVED. REVISIONS DIST G 14 LTR DESCRIPTION OWN DATE REV PER 0 G 3 A —0 0 3 5 —0 5 APVD JR MJS 28FEB05 D D U WIRE RANGE

Contextual Info: THIS DRAWING IS UNPUBLISHED. 2 3 4 RELEASED FOR PUBLICATION - - ALL RIGHTS RESERVED. COPYRIGHT BY TYCO ELECTRONICS CORPORATION. LOC DIST GP 00 R E V IS IO N S DESCRIPTION E1 A REVISED PER E C Q -0 5 -0 0 9 2 8 6 28FEB06 10.16 [.4 00 ] MA X CABLE DIA 11.18

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AD DIST REVISIONS 00 LTR AD DESCRIPTION DWN DATE EC 0G3C 0838 04 APVD BSV JLG 28FEB05 POINT OF MEASUREMENT FOR PLATING THICKNESS

Contextual Info: THIS DRAWING IS UNPUBLISHED. 4RN A U COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 4 3 2 - LOC ALL RIGHTS RESERVED. DIST AA R E V IS IO N S 22 P LTR C DESCRIPTION DATE DWN TK JW 28FEB07 REV PER ECO—07—004331 APVD MATERIAL:

L142

Abstract: V7-3S39E9 L14-2
Contextual Info: FO-50 3 6 0 - L 1 3 1 2 1 4 1 1 5 1 6 1 1 1 8 1 REV CW-B8882 1 9 1 DOCUMENT 207539 io CHANGED CS L BY CHECK SAV 28FEB03 NOTES 1 - I N I N S P E C T I O N , DO NOT BURN OUT GOLD C O N T A C T S 2 - I N I N S P E C I O N , DO NOT E X C E E D 10 VDC, . I A R E S I S T I V E LOAD

Contextual Info: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC

Contextual Info: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive

SI7456DDP-T1-GE3

Abstract: 2285b
Contextual Info: New Product Si7456DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a VDS (V) RDS(on) () Max. 0.023 at VGS = 10 V 27.8 100 0.024 at VGS = 7.5 V 27.2 0.031 at VGS = 4.5 V 24 Qg (Typ.) 9.7 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm

Contextual Info: New Product Si7463ADP Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0100 at VGS = - 10 V - 46 0.0135 at VGS = - 4.5 V - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00100 at VGS = 10 V 60 0.00135 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification

Contextual Info: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET

SiR460D

Abstract: SiR460DP siR460
Contextual Info: New Product SiR460DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0047 at VGS = 10 V 40g 0.0061 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 16.8 nC • • • • Halogen-free According to IEC 61249-2-21 TrenchFET Gen III Power MOSFET

SIR662

Contextual Info: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 VDS (V) 60 Qg (Typ.) 30 nC PowerPAK SO-8 D S 6.15 mm S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View

SiR826DP

Contextual Info: New Product SiR826DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0048 at VGS = 10 V 60 0.0052 at VGS = 7.5 V 60 0.0065 at VGS = 4.5 V 60 VDS (V) 80 Qg (Typ.) 27.9 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si7336ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) 0.0030 at VGS = 10 V 30 0.0040 at VGS = 4.5 V 27 VDS (V) 30 Qg (Typ.) 36 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Low-Side DC/DC Conversion - Notebook - Server

SI7997Dp

Contextual Info: New Product Si7997DP Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () - 30 0.0055 at VGS = - 10 V - 60 0.0078 at VGS = - 4.5 V - 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

sir158

Contextual Info: New Product SiR158DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60g 0.0023 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 41.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

si7272

Contextual Info: New Product Si7272DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • PWM Optimized

Contextual Info: Si7463DP Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.0092 at VGS = - 10 V - 18.6 0.014 at VGS = - 4.5 V - 15 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

AT91 TC CAPTURE

Abstract: AT91FR40162
Contextual Info: Features • Incorporates the ARM7TDMI ARM® Thumb® Processor Core • • • • • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt – Embedded ICE In-circuit Emulation

2.54mm Male locking header

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 66 FLAMABILITY RATING: UL94-V0 MAX TEMPERATURE: 220°C 10 S COLOR: BEIGE CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 2.54MM A

PM582

Contextual Info: 2 THIS DRAWING IS UNPUBLISHED. C O P Y RI G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3 H T S LOC GP RESERVED. REV I S I O N S D I ST 00 LTR DE S C R I P T I O N DATE D WN APVD SEE SHEET c C T H I S DRAWING I S a C ONT R OL L ED DOCUMENT FOR T l C O E L E C T R O N I C S C O RP ORA TI ON