28F512 INPUT ID Search Results

2SF512

Contextual Info: 28F512 D Q q -D Q 7 E R A S E V O LTAG E IN P U T / O U T P U T SW ITC H BUFFERS TO A R R A Y SO U R C E ST A T E C O N TR O L COMMAND R E G IST ER IN T EG R A T ED STO P T IM ER u PGM V O LTAG E SW ITC H C H IP E N A B L E O U T PU T E N A B L E CE# • DAT A

Contextual Info: In te l 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 /as Typical Byte-Program — 1 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read

28F512

Abstract: 28F512 input id intel 28f512 80C186 N28F512 P28F512 80C186 programming
Contextual Info: in te i 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 1 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp H igh-Perform ance Read

Contextual Info: 28F512 512K 64K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 )j.s Typical Byte-Program — 1 Second Chip-Program ■ 100,000 Erase/Program Cycle Typical ■ 12.0V ±5% VPP

AP28F512-120

Contextual Info: 512K 64K X 8 A28F512 CMOS FLASH MEMORY (Automotive) Extended Automotive Temperature Range: -4 0 °C to +125°C Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 juts Typical Byte-Program — 1 Second Chip-Program

N28F512-150

Abstract: 26F512 intel PLD
Contextual Info: INTEL CORP MENORY/PLP/ irrte1 5bE I • 182i,l?t, D07fa233 D27 28F512 512K (64K x 8 CMOS FLASH MEMORY ■ Flash Electrical Chip-Erase — 1 Second Typical Chlp-Erase ■ Quick-Pulse Programming Algorithm — 10 jLts Typical Byte-Program — 1 Second Chip-Program

AMD 28F512

Contextual Info: a F IN A L Advanced Micro Devices Am28F512 65,536 X 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • High perform ance - 70 ns m aximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Low power consum ption - 30 m A m aximum active current

Contextual Info: A28F512 512K 64K x 8 CMOS FLASH MEMORY (A u to m o tiv e ) m Extended Automotive Temperature Range: -4 0 °C to +125°C • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program

Contextual Info: 512K 64K X 8 A28F512 CMOS FLASH MEMORY (Automotive) Extended Automotive Temperature Range: -40°C to + 125°C Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 1 Second Chip-Program

Contextual Info: i n t J . A28F512 512K 64K x 8 CMOS FLASH MEMORY (Automotive) • Extended Automotive Temperature Range: -40°C to + 125'C ■ Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program

Contextual Info: in te i A28F512 512K 64K x 8 CMOS FLASH MEMORY (Automotive) • Extended Automotive Temperature Range: 40°C to +125°C ■ Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program

Contextual Info: CAT28F512 Licensed Intel second source 512K-Bit CMOS Flash Memory FEATURES • Commercial, Industrial and Automotive ■ Fast Read Access Time: 90/120/150 ns Temperature Ranges ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase –Active: 30 mA max CMOS/TTL levels

Contextual Info: F IN A L a A m 28F 512 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 70 ns m aximum access time ■ ■ CMOS Low pow er consum ption Flasherase Electrical Bulk Chip-Erase

1N914

Abstract: 28F512 CAT28F512 28F512 input id Nippon capacitors
Contextual Info: Preliminary CAT28F512 CAT28F512 Licensed Intel second source 512K-Bit CMOS Flash Memory FEATURES • Commercial, Industrial and Automotive Tem- ■ Fast Read Access Time: 90/120/150 ns perature Ranges ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase

Contextual Info: a Am28F512 Advanced Micro Devices 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ ■ — No data retention power consumption

Contextual Info: FINAL A M D ii Am 28F512 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High perform ance ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access tim e

Contextual Info: FINAL A M D ii Am 28F512 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High perform ance ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access tim e

ac 1084

Contextual Info: H EE GEN FR ALO CAT28F512 Licensed Intel second source 512K-Bit CMOS Flash Memory LE A D F R E ETM FEATURES • Commercial, Industrial and Automotive ■ Fast Read Access Time: 90/120/150 ns Temperature Ranges ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase

28F512

Abstract: ac 1084 1N914 CAT28F512
Contextual Info: H CAT28F512 EE GEN FR ALO 512K-Bit CMOS Flash Memory LE Licensed Intel second source A D F R E ETM FEATURES • Commercial, Industrial and Automotive ■ Fast Read Access Time: 90/120/150 ns Temperature Ranges ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase

ac 1084

Abstract: 28F512 CAT28F512 200 ns 1N914 CAT28F512
Contextual Info: H CAT28F512 EE GEN FR ALO 512K-Bit CMOS Flash Memory LE Licensed Intel second source A D F R E ETM FEATURES • Commercial, Industrial and Automotive ■ Fast Read Access Time: 90/120/150 ns Temperature Ranges ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase

Contextual Info: CAT28F512 L ice n se d In tel second so u rce 512K-Bit CMOS Flash Memory FEATURES • Commercial, Industrial and Automotive Temperature Ranges ■ Fast Read Access Time: 90/120/150 ns ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels -S tan d b y: 1 mA max (TTL levels)

Contextual Info: FINAL AMD£I A m 2 8 F 5 1 2 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High perform ance ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access tim e

Am28F512

Contextual Info: Advencü a Information Am28F512 Advanced Micro Devices 65,536 X 8-Bit CMOS Flash E2PROM DISTINCTIVE CHARACTERISTICS • ■ ■ ■ Flashwase Electrical Bulk Chip-Erase — One Second Typical Chip-Erase Compatible with JEDEC Standard Byte Wide 32-pln EEPROM Pinouts

M28F512

Abstract: PDIP32 PLCC32 m28f512-25
Contextual Info: /= T S G S -T H O M S O N ^ 7 # !M g ^ (Q iti(M (Q M (g § M28F512 CMOS 512K (64K x 8) FLASH MEMORY • FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 10ns