28F512 INPUT ID Search Results

28F512

Abstract: 290204 231369 N28F512-120 P28F512 28F512 input id BIOS 32 Pin PLCC intel 28f512 TN28F512-120 TP28F512-120
Contextual Info: 28F512 512K 64K x 8 CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 1 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g 5% VPP Y High-Performance Read 120 ns Maximum Access Time

2SF512

Contextual Info: 28F512 D Q q -D Q 7 E R A S E V O LTAG E IN P U T / O U T P U T SW ITC H BUFFERS TO A R R A Y SO U R C E ST A T E C O N TR O L COMMAND R E G IST ER IN T EG R A T ED STO P T IM ER u PGM V O LTAG E SW ITC H C H IP E N A B L E O U T PU T E N A B L E CE# • DAT A

Contextual Info: In te l 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 /as Typical Byte-Program — 1 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read

AP28F512-120

Contextual Info: A28F512 512K 64K x 8 CMOS FLASH MEMORY (Automotive) • Extended Automotive Temperature Range: -4 0 °C to +125°C ■ Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 1 Second Chip-Program

28F512

Abstract: 28F512 input id intel 28f512 80C186 N28F512 P28F512 80C186 programming
Contextual Info: in te i 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 1 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp H igh-Perform ance Read

28F512

Abstract: 32-PIN 80C186 A28F512
Contextual Info: in te i 512K 64K X A28F512 8 CMOS FLASH MEMORY (Automotive) Extended Automotive Temperature Range: -4 0 °C to + 125X Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 fis Typical Byte-Program — 1 Second Chip-Program

Contextual Info: 28F512 512K 64K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 )j.s Typical Byte-Program — 1 Second Chip-Program ■ 100,000 Erase/Program Cycle Typical ■ 12.0V ±5% VPP

D28F512-120P1C4

Abstract: d28f512 N28F512-120P1C4 28F512-150P1C4 N28F512-150P1C4 N28F512-200P1C4 29020 N28F512-200
Contextual Info: INTE L CORP intel • M EM OR Y/ LO GI C SOE D ■ H&2bl 7h Q0b72fl2 S ■ V -^ -/5 -2 7 28F512 512K (64K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 iia Typical Byte-Program

intel 28f512

Abstract: 28F512 80C166 80C186 P28F512
Contextual Info: 512K 64K X 8 28F512 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 1 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V +5% VPP ■ Command Register Architecture for

AP28F512-120

Contextual Info: 512K 64K X 8 A28F512 CMOS FLASH MEMORY (Automotive) Extended Automotive Temperature Range: -4 0 °C to +125°C Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 juts Typical Byte-Program — 1 Second Chip-Program

N28F512-150

Abstract: 26F512 intel PLD
Contextual Info: INTEL CORP MENORY/PLP/ irrte1 5bE I • 182i,l?t, D07fa233 D27 28F512 512K (64K x 8 CMOS FLASH MEMORY ■ Flash Electrical Chip-Erase — 1 Second Typical Chlp-Erase ■ Quick-Pulse Programming Algorithm — 10 jLts Typical Byte-Program — 1 Second Chip-Program

28FS12

Abstract: 51212
Contextual Info: in t e i 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Puise Programming Algorithm — 10 ju.s Typical Byte-Program — 1 Second Chlp-Program 100,000 Erase/Program Cycles 12.0V ±5% VPP High-Performance Read

AMD 28F512

Contextual Info: a F IN A L Advanced Micro Devices Am28F512 65,536 X 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • High perform ance - 70 ns m aximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Low power consum ption - 30 m A m aximum active current

Contextual Info: A28F512 512K 64K x 8 CMOS FLASH MEMORY (A u to m o tiv e ) m Extended Automotive Temperature Range: -4 0 °C to +125°C • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program

Contextual Info: 512K 64K X 8 A28F512 CMOS FLASH MEMORY (Automotive) Extended Automotive Temperature Range: -40°C to + 125°C Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 1 Second Chip-Program

N28F512-200

Abstract: P28F512-200 28F512-150 29020 28f512-200
Contextual Info: intei 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program

Contextual Info: i n t J . A28F512 512K 64K x 8 CMOS FLASH MEMORY (Automotive) • Extended Automotive Temperature Range: -40°C to + 125'C ■ Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program

Contextual Info: 28F512 512K 64K x 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chlp-Erase ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 1 Second Chip-Program ■ 100,000 Erase/Program Cycle Typical ■ 12.0V ±5% VPP

intel Automotive

Abstract: AP28F512-120
Contextual Info: 512K 64K X 8 A28F512 CMOS FLASH MEMORY (Automotive) Extended Automotive Temperature Range: -40°C to + 125°C Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Puise Programming Algorithm — 10 ¡is Typical Byte-Program — 1 Second Chip-Program

AP28F512-120

Abstract: AP28F512 AN28F512-120 28F512 AP28F512-150 AN28F512 INTEL FLASH AP-316 ap-325 intel 28f512 irs2092
Contextual Info: In te l A28F512 512K 64K x 8 CMOS FLASH MEMORY (Automotive) • Extended Autom otive Tem perature Range: - ¥ T C to + 12S*C ■ Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Qulck-Pulse Programming Algorithm — 10 n9 Typical Byte-Program

intel 28f512

Abstract: 28F512 Intel Small Outline Package Guide how to program in eprom TN28F512-120 80C166 80C186 N28F512 P28F512 intel BIOS 32 Pin PLCC
Contextual Info: 512K 64K X 8 28F512 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 1 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V +5% VPP ■ High-Performance Read

intel 28f512

Contextual Info: A28F512 512K 64K x 8 CMOS FLASH MEMORY (Automotive) • Extended Automotive Temperature Range: -40 °C to + 125°C Integrated Program/Erase Stop Timer Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface ■ Flash Electrical Chlp-Erase

Contextual Info: in te i A28F512 512K 64K x 8 CMOS FLASH MEMORY (Automotive) • Extended Automotive Temperature Range: 40°C to +125°C ■ Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program

a6628

Abstract: 28F512 28F512 input id 512KBIT A-6628
Contextual Info: Philips Components-Signetics 28F512 Document No. ECN No. Date of Issue June 1990 Status Objective Specification 512K-bit FLASH memory 64K x 8 Memory Products FEATURES GENERAL DESCRIPTION • 64K-byte writable non-volatile memory The Philips Components' 28F512 is an