28F512 INPUT ID Search Results

Contextual Info: In te l 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 /as Typical Byte-Program — 1 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read

Contextual Info: 28F512 512K 64K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 )j.s Typical Byte-Program — 1 Second Chip-Program ■ 100,000 Erase/Program Cycle Typical ■ 12.0V ±5% VPP

Contextual Info: A28F512 512K 64K x 8 CMOS FLASH MEMORY (A u to m o tiv e ) m Extended Automotive Temperature Range: -4 0 °C to +125°C • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program

Contextual Info: 512K 64K X 8 A28F512 CMOS FLASH MEMORY (Automotive) Extended Automotive Temperature Range: -40°C to + 125°C Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 1 Second Chip-Program

1N914

Abstract: 28F512 CAT28F512 28F512 input id Nippon capacitors
Contextual Info: Preliminary CAT28F512 CAT28F512 Licensed Intel second source 512K-Bit CMOS Flash Memory FEATURES • Commercial, Industrial and Automotive Tem- ■ Fast Read Access Time: 90/120/150 ns perature Ranges ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase

Contextual Info: FINAL A M D ii Am 28F512 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High perform ance ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access tim e

Am28F512

Contextual Info: Advencü a Information Am28F512 Advanced Micro Devices 65,536 X 8-Bit CMOS Flash E2PROM DISTINCTIVE CHARACTERISTICS • ■ ■ ■ Flashwase Electrical Bulk Chip-Erase — One Second Typical Chip-Erase Compatible with JEDEC Standard Byte Wide 32-pln EEPROM Pinouts

Contextual Info: IIIIICRTRLYST m t t 11 S E M I C O N D U C T O R CAT28F512 512K-Bit CMOS Flash Memory FEATURES • Fast Read Access Time: 90/120/150 ns Stop Timer for Program/Erase ■ Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)

28FS12

Contextual Info: a Am28F512 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 pA maximum standby current

Contextual Info: L icen sed In tel second source C A T2 8 F5 1 2 512K-Bit CMOS Flash M em ory FEATURES • Fast Read Access Time: 90/120/150 ns ■ Low Power CMOS Dissipation: -A c tiv e : 30 mA max CMOS/TTL levels -S ta n d b y: 1 mA max (TTL levels) -S ta n d b y: 100 jiA max (CMOS levels)

Am2BF512

Contextual Info: HNA: AMD£I A m 28F512 512 Kilobit 64 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase