28F00 Search Results

Contextual Info: in te l 28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY Effective Zero Wait-State Performance up to 33 MHz — Synchronous Pipelined Reads Backwards-Compatible with 28F008SA Command-Set SmartVoltage Technology — User-Selectable 3.3V or 5V Vqc

Contextual Info: I P ^ iU ö Ä Ä f in te i 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Very High-Performance Read — 85 ns Maximum Access Time

Contextual Info: intJ. 2-MBIT 128K x 16, 256K x 8 LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 28F200BL-T/B, 28F002BL-T/B m Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.0V-3.6 V • Automatic Power Savings Feature — 0.8 mA Typical Ice Active Current in

Contextual Info: in tj 2-MBIT 128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY 28F200BX-T/B, 28F002BX-T/B • x8/x16 Input/Output Architecture — 28F200BX-T, 28F200BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs ■ x8-only Input/Output Architecture

Contextual Info: 28F400BX-T/B, 28F004BX-T/B 4 MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY • x8/x16 Input/Output Architecture — 28F400BX-T, 28F400BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs ■ Very High-Performance Read — 60/80 ns Maximum Access Time

Contextual Info: int ! PRELIMINARY BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 28F004S5, 28F008S5, 28F016S5 Includes Commercial and Extended Temperature Specifications SmartVoltage Technology — Smart 5 Flash: 5 V Vcc and 5 V or 12 V V p p High-Performance

Contextual Info: PRODUCT PREVIEW BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 28F004S3, 28F008S3, 28F016S3 Includes Commercial and Extended Temperature Specifications • SmartVoltage Technology — Smart 3 Flash: 2.7V Read-Only or 3.3V Vcc and 3.3V or 12V VPP

Contextual Info: in tj. 28F400BX-T/B, 28F004BX-T/B 4 MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY • x8/x16 Input/Output Architecture — 28F400BX-T, 28F400BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs ■ Very High-Performance Read

intel e28f

Abstract: 28f400 BYTE PROGRAM
Contextual Info: [p[M3 [G>U T [P^lWOIl in te l 4-MBIT 256K x 16, 512K x 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F004BV-T/B, 28F400CV-T/B Intel Sm artVoltage Technology — 5V or 12V Pro g ram /E rase — 3.3V or 5V Read O peration — 60% Faster Typical Program m ing at

Contextual Info: in te i. 28F200BL-T/B, 28F002BL-T/B 2-MBIT 128K x 16, 256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY • Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.0V-3.6V ■ Expanded Temperature Range 20°C to +70°C ■ x8/x16 Input/Output Architecture

Contextual Info: PRELIMINARY in te l 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY High Performance Read — 80/120 ns Max Access Time 40 ns Max. Output Enable Time Low Power Consumption — 20 mA Typical Read Current x8-Only Input/Output Architecture — Space-Constrained 8-bit

28F001

Abstract: intel 28F001BXT
Contextual Info: in t e i, 28F001BX-T/28F001BX-B 1M 128K x 8 CMOS FLASH MEMORY • High Integration Blocked Architecture — One 8KB Boot Block w/Lock Out — Two 4KB Parameter Blocks — One 112KB Main Block ■ 10,000 Erase/Program Cycles Minimum Per Block ■ Simplified Program and Erase

intel i3 mtbf

Abstract: PA28F0085A-120 28F008SA E0000 E28F008SA intel PLD 29041 E28F008SA-120 PA28F0085A ER27
Contextual Info: INTEL CORP MEMORY/PL] / 5 bE ]) m MfliblTb D0 7 b4f l ö TTb • ITL2 ß fö iy ilO I M G W in y 28F008SA 8 MBIT (1 MBIT x 8) FLASH MEMORY 3 zç. ■ Hlgh-Density Symmetrically Blocked Architecture — Sixteen 64 KByte Blocks Very High-Performance Read — 85 ns Maximum Access Time

28F008SA

Abstract: E28F008SA E0000 SmartDie TB28F008SA
Contextual Info: E PRELIMINARY 5 VOLT FlashFile MEMORY 28F008SA x8 n n n n High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles per Chip Automated Byte Write and Block Erase

28F004S3

Abstract: 28F008S3 28F008SA 28F008SA-L 28F008SC 28F016S3
Contextual Info: E PRELIMINARY BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 28F004S3, 28F008S3, 28F016S3 Includes Commercial and Extended Temperature Specifications n n n n n SmartVoltage Technology  Smart 3 Flash: 2.7 V or 3.3 V V CC and 2.7 V, 3.3 V or 12 V V PP

82371FB

Abstract: 28F002BC 82437fx 36A4
Contextual Info: E n n n n n n PRELIMINARY 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY High Performance Read  80/120 ns Max Access Time 40 ns Max. Output Enable Time Low Power Consumption  20 mA Typical Read Current x8-Only Input/Output Architecture  Space-Constrained 8-bit

28F008SAT

Contextual Info: inU PRELIMINARY 28F008SA 8-MBIT 1-MBIT X 8 FlashFile MEMORY Extended Temperature Specifications included High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles

6361A

Contextual Info: in te l 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F I L E t m MEMORY High-Performance Read — 200 ns Maximum Access Time High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Deep Power-Down Mode — 0.20 juA Ice Typical Low-Voltage Operation

AB28F200B5B80

Abstract: AB28F400B5B80 E28F800B5T90 AB28F400B5 AB28F400B5B80 FLASH tb28f200b5 AB28F
Contextual Info: 5 VOLT BOOT BLOCK FLASH MEMORY 28F200B5, 28F004/400B5, 28F800B5 x8/x16 • SmartVoltage Technology — 5 Volt Boot Block Flash: 5 V Reads, 5 V or 12 V Writes — Increased Programming Throughput at 12 V Vpp ■ Very High-Performance Read — 2-, 4-Mbit: 55 ns Access Time

29053

Contextual Info: [p[F3 [U ©T 1PIF3G in te i 8-MBIT 512K X 16,1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B, 28F800CE-T/B, 28F008BE-T/B • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation

Intel i7 MTBF

Contextual Info: in te l 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase

8F004

Contextual Info: in U I v PRELIMINARY 5 VOLT BOOT BLOCK FLASH MEMORY 28F002BC x8 • High Performance Read — 80/120 ns Max. Access Time 40 ns Max. Output Enable Time ■ Extended Cycling Capability — 100,000 Block Erase Cycles ■ Automated Byte Write and Block Erase

INTEL ES

Abstract: XX96H 297372
Contextual Info: int ! ADVANCE INFORMATION 28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY Effective Zero Wait-State Performance up to 33 MHz - Synchronous Pipelined Reads • Backwards-Compatible with 28F008SA Command-Set . 2 pA Typica| Deep Power.Down

k 4431

Contextual Info: in te i 28F200BX-T/B, 28F002BX-T/B 2 MBIT 128K x 16,256K x 8 BOOT BLOCK FLASH MEMORY FAMILY x6/x16 Input/Output Architecture — 28F200BX-T, 28F200BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs Very High-Performance Read — 60/80 ns Maximum Access Time