288MW Search Results

N-7075

Contextual Info: Objective Product Specification nAD1280-18 12-Bit 80MSPS Sampling Analog-to-Digital Converter FEATURES APPLICATIONS • • • • • • • • • • • • • • 1.8V/3.3V power supply SINAD typ 67dB for fin = 50MHz Low power (288mW@1.8V) Sample rate: 15-80MSPS

TC51V16405

Abstract: TC51V16405c
Contextual Info: INTEGRATED TOSHIBA " O S H I B A MOS DIGITAL I NT EGR AT ED CIRCUIT ” 51 V 16405 C5JS CST5 - SO TCS1V1c405 CSJ S/CSTS- 60 CIRCUIT TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 4,194,304 W O RD x 4 BIT FAST PAGE DYNAM IC RAM DESCRIPTION The TC51V16405CSJS/CSTS is fast page dynamic RAM organized 4,194,304 words by 4 bits. The

Contextual Info: TOSHIBA TC51V16400BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheTC 51V16400B ST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. T heTC 51V16400B ST uti­ lizes Toshiba's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide operating mar­

KAD5512P

Abstract: 001lV matte Power Supply Control IC dap 07 500MSPS KAD5512 KAD5512HP KAD5514P-25
Contextual Info: KAD5512HP Data Sheet December 5, 2008 High Performance 12-Bit, 250/210/170/125MSPS ADC FN6808.0 Features The KAD5512HP is the high-performance member of the KAD5512 family of 12-bit analog-to-digital converters. Designed with Intersil’s proprietary FemtoCharge

Contextual Info: •HYUNDAI H Y 5 1 V 1 8 1 6 4 B ,H Y 5 1 V 1 6 1 6 4 B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process

Contextual Info: •HYUNDAI H Y 5 1 V 1 7 4 0 4 B ,H Y 5 1 V 1 6 4 0 4 B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

Contextual Info: HY51V16100B Series -HYUNDAI 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques

MSM51V17405F

Abstract: CA10 MSM51V17405
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

MSM51V16405F

Abstract: MSM51V16405
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

Contextual Info: PRE LIM IN AR Y- - May 1996 Edition 1.0 FUJITSU PRODUCT PROFILE SHEET MB8 1 V16405A-60/-70 CMOS 4M x 4 BIT HYPER PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Hyper Page Mode Dynamic RAM The Fujitsu MB81V16405A is a fully decoded CMOS Dynamic RAM DRAM that contains

MSM51V17805

Abstract: SOJ28
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

SOJ28

Abstract: bsl 100 MSM51V16800B
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

Contextual Info: HM51W16400 Series HM51W17400 Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-649A Z Rev. 1.0 Oct. 14, 1996 Description The Hitachi H M 51W 16400 Series, H M 51W 17400 Series are CMOS dynamic RAMs organized 4 ,194,304word X 4-bit. They employ the m ost advanced 0.5 Jim CMOS technology for high performance and low

Contextual Info: Preliminary SUF-2000 Product Description Sirenza Microdevices’ SUF-2000 is a monolithically matched broadband high IP3 gain block covering 0.05-10 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from

Contextual Info: HM51W16400 Series HM51W17400 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-649C Z Rev. 3.0 Feb. 27, 1997 Description The Hitachi HM51W16400 Series, HM51W17400 Series are CMOS dynamic RAMs organized 4,194,304word x 4-bit. They employ the most advanced 0.5 |i.m CMOS technology for high performance and low

Contextual Info: LTC3855 Dual, Multiphase Synchronous DC/DC Controller with Differential Remote Sense FEATURES n n n n n n n n n n n n n n n n DESCRIPTION Dual, 180° Phased Controllers Reduce Required Input Capacitance and Power Supply Induced Noise High Efficiency: Up to 95%

HY51V16160BJC

Contextual Info: HY51V18160B,HY51V16160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this

HY51V17800B

Abstract: HY51V17800C
Contextual Info: HY51V17800C,HY51V16800C 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this

64128K-RGB

Abstract: 5mm RGB led 4 pin 64128K
Contextual Info: Displaytech Ltd LCD MODULE 64128K-RGB SERIES Version : 1.1 Displaytech Ltd. Website: www.displaytech.com.hk LCD Module Product Specification Product: 64128K Series LCD Module 128 x 64 DOTS P 1 of 21 Displaytech Ltd LCD MODULE 64128K-RGB SERIES Version : 1.1

RS560C

Abstract: RS560 common base amplifier circuit common emitter amplifier
Contextual Info: Issued July 1983 004-591 Data Pack J RF amplifier IC RS560C Data Sheet RS stock number 303-214 A high performance low noise RF amplifier i.c. in an 8 pin DIL package. The large number of circuit nodes accessible from the outside of the package affords great flexibility, enabling the operating currents and

Contextual Info: PEDD51V18160F-01 1Semiconductor MSM51V18160F This version: May. 2000 Previous version :  Preliminary 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V18160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate

Contextual Info: PEDD51V17400F-01 1Semiconductor MSM51V17400F This version: May. 2000 Previous version :  Preliminary 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate

Contextual Info: HY51V16400B Series -HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: LG Semicon GM71V16163C GM71VS16163CL LG Semicon Co.,Ltd. 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM71V S 16163C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM71V(S)16163C/CL has realized higher density, higher performance and various functions by utilizing