2854K Search Results

FPT102

Abstract: FPT720
Contextual Info: 1-15 Photodiodes BV lR - 5.0 iiA, H < 0.1 IIW/cm» Min Typ vn V R Tungsten R Q 0.9 ii Responïivtty. Respontivity •r ■l T (jA/mW/cm1 iiA/mW/cm' V „« -1 0 V V „ = -1 0 V H £ 0.1 MW/cm> H —20 mW/em* Tc = 2854K No bias, GaAs Typ Max Min Typ Min Typ

MLG5547

Abstract: MLG4406 mlg-5527 MLG4458 5537A MLG 5516 MLG4416 mlg5558 4406 MLG5506
Contextual Info: MEC TEST TERMS AND DIMENSIONS 1. Luminance Resistance: After 2 hours exposure under illumination 400~600 Lux, then to test with 10 Lux and 100 Lux under standard illuminant A chroma temperature 2854K . 2. Dark Resistance: Resistance value when the light is turned off for ten seconds. (0 Lux)

TCD1200D

Abstract: TCD1200 TCD-12
Contextual Info: TCD1200D TENTATIVE The TCD1200D is a high sensitive and low dark current 2160 elements image sensor. The sensor can be used for facsimile, imagescanner and OCR, The device contains a row of 2160 photodiodes, which provide a 8 lines/mm (200 DPI) resolution

TC74HC04P

Abstract: TCD141C TCD141 2SC1815
Contextual Info: TCD141 ARC TENTATIVE TCD141C is a high sensitive and low dark current 5000-element image sensor. The sensor can be used for Facsimile. Imagescanner and OCR. The device contain a row of 5000 potodiodes, which provide a 16 lines/mm (400 DPI) across a A3 size paper.

TH7815AC

Abstract: TH7815 TH7815A 0896B e2v ccd e2v linear ccd pj 71 diode
Contextual Info: TH7815A 50 MHz 4096 Linear CCD Datasheet 1. Features • • • • • • • • Data Rate up to 50 MHz 2 Outputs at 25 MHz Each Pixel Size: 10 µm x 10 µm (10 µm Pitch) 300 to 1100 nm Spectral Range High Sensitivity and Lag Free Photodiodes Very Low Noise (30 pJ/cm2 Noise Equivalent Illumination)

Thomson-CSF B10

Abstract: peltier effect element TH78
Contextual Info: TH7888A AREA ARRAY CCD IMAGE SENSOR 1024 x 1024 PIXELS WITH ANTIBLOOMING n n n n n n n n n n n 1024 x 1024 pixels with memory zone Up to 30 images / second Built-in antiblooming device providing an electronic shutter function. Pixel : 14 mm x 14 mm Image zone : 14,34 x 14,34 mm²

TH788A

Abstract: Atmel 546 ncp3
Contextual Info: Features • • • • • • • • • • 1024 x 1024 Pixels with Memory Zone Up to 30 Images/Second Built-in Antiblooming Device Providing an Electric Shutter Function Pixel: 14 µm x 14 µm Image Zone: 14.34 x 14.34 mm2 Two Outputs at 20 MHz Each

CLD156

Abstract: CLD156R
Contextual Info: CLD156 This product is tested to satisfy the conditions of both the CLD156 and the CLD156R. Large Active Area Silicon Planar photodiode Clairex  Technologies, Inc. May, 2001 0.186 4.72 0.164 (4.17) 0.365 (9.27) 0.355 (9.02) 1.000 (25.4) min 0.030 (0.76) nom

RS2019

Abstract: ILX703A S2045 S2048
Contextual Info: ILX703A 2048-pixel CCD Linear Image Sensor B/W with Shutter Function For the availability of this product, please contact the sales office. Description The ILX703A is a reduction type CCD linear sensor designed for facsimile, image scanner and OCR use. This sensor reads B4 size documents at a density of

CCD linear 22pin

Abstract: high frequency line scan 2048 pixels sensor S2048 sony CCD LINEAR IMAGE SENSOR sony linear ccd ILX503A S2045 Ilx503 CM500S
Contextual Info: ILX503A 2048-pixel CCD Linear Image Sensor B/W Description The ILX503A is a reduction type CCD linear sensor designed for facsimile, image scanner and OCR use. This sensor reads B4 size documents at a density of 200 DPI (Dot Per Inch). A built-in timing generator

T1 Sensor element

Abstract: Infrared Sensor DIP with datasheet TCD1208AP 2160 CCD linear image sensor 22-pin
Contextual Info: TCD1208AP TOSHIBA CCD LINEAR IMAGE SENSOR CCD Charge Coupled Device TCD1208AP The TCD1208AP is a high sensitive and low dark current 2160− element image sensor. The sensor can be used for facsimile, imagescanner and OCR. The device contains a row of 2160

A2L6

Abstract: A3L12 a2l1 A3L10 CCD595 Contact image sensor fairchild P115 FAIRCHILD A3R16 P210 fairchild A1R8
Contextual Info: PRELIMINARY DATA SHEET CCD595 9216 x 9216 Pixel Image Area Full Frame CCD Image Sensor FEATURES • 9216 x 9216 Full Frame CCD Array • 8.75 µm x 8.75 µm Pixels • 80.64mm x 80.64mm Image Area • 100% Fill Factor • Non Multi-Pinned Phase MPP Operation

Contextual Info: SONY ILX5 0 8 A 7926-pixel CCD Linear Image Sensor B/W D escription 24 pin DIP (Ceramic) The ILX508A is a reduction type C C D linear sensor developed for high resolution copiers. This sensor reads A3-slze documents at a density of 600 DPI (Dot Per Inch). A built-in timing generator and clock-drivers

CL905L

Abstract: CL9P5L clairex CL905
Contextual Info: CL9P5LQ Epoxy-encapsulated Photoconductors Replaces the CL9P5L Technologies, Inc. November, 2003 Pattern shown is typical and may vary from part to part. features • thicker ceramic substrate • low cost epoxy encapsulation Clairex ALL DIMENSIONS ARE IN INCHES

PGM5506

Abstract: PGM5537-MP PGM5516 PGM1200
Contextual Info: TOKEN PGM CDS光敏電阻器 CDS 光敏電阻器 CDS 光敏電阻器 PGM 拓展傳感器光電的應用 產品簡介 硫化鎘（CdS）或光敏電阻器（LDR）， 其阻抗隨光落在它表面的總量而轉變。 眾所周知，光敏電阻有許多名稱，包括

CLD185

Abstract: CLD185R
Contextual Info: CLD185, CLD185R Clairex  Technologies, Inc. Large Active Area Silicon Planar photodiodes May, 2001 WINDOW ANODE 1.00 25.4 min 0.435 (11.05) 0.425 (10.79) CATHODE 3 LEADS 0.019 (0.48) 0.015 (0.38) 0.560 (14.72) 0.540 (13.72) 0.496 (12.6) 0.476 (12.1)

CLT130W

Abstract: CLT131W CLT132W CLT2020 CLT2030 CLT2035
Contextual Info: CLT130W, CLT131W, CLT132W NPN Silicon Phototransistors 0.210 5.33 0.190 (4.83)  Technologies, Inc. The CLT130W, CLT131W and CLT132W are exact replacements for obsolete part numbers CLT2020, CLT2030 and CLT2035. 0.190 (4.83) 0.176 (4.47) Clairex July, 2001

PS2705-4

Abstract: NDL55 APD 1300 2,5 GHz NDL7603P k1152
Contextual Info: CD-ROM版光デバイス CD-ROM X13769XJ2V0CD00 12−1 光デバイス フォトカプラ トランジスタ出力 • シングルTr.出力（汎用型）（1/2） 品 名 PS2501-1 特 徴 高絶縁耐圧 絶対最大定格 電気的特性 BV IF V CEO

lg crt monitor circuit diagram

Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

MN8027

Abstract: 2048 x 1 ccd linear array TT30 22-DIC 22DIC panasonic linear ccd
Contextual Info: PANASONIC INDL/ELEK -CIO 1^ 1 ^ 3 2 0 5 5 DDDbbbb 0 693 2 8:52 P ANASONIC INDL » ELECTRON IC 7ZÇ 06666 D~ T^41-55 -<^-Î ÏZyV _ MN8027 M N 8027 2,048 b V hCC D V “ T M ^ ^ / 2 , 0 4 8 - B i t S ensor CCD L in e a r Image “ffi'rP SSH H /Pin Assignment

Contextual Info: TCD1208AP TOSHIBA CCD LINEAR IMAGE SENSOR CCD Charge Coupled Device TCD1208AP The TCD1208AP is a high sensitive and low dark current 2160− element image sensor. The sensor can be used for facsimile, imagescanner and OCR. The device contains a row of 2160

TH7803A-CD

Abstract: TH7803A 7803A 1728 ccd
Contextual Info: a^E D • T G a t ö T S Q Q O O O 6!! 4 I — 21 r - H ' s ' — T H O M S O N MIL ET S P A T I A U X IN H V s s *e c H V o o Linear CCD* Image Sensor i - s TH 7803A Z IN H Vo s NO NO NO Vn NO r l i f l E n ^ b i l ^ R F e l F T l F e l F ^ F l R 1728 pixels

LA 7804 ON

Abstract: ic 7804 X106-1 pin diagram of 7804
Contextual Info: 21E D • ^02bê72 0GGGCH7 5 ■ i-s s - — 27 — T H O M S O N MIL ET S P A T I A U X TH 7804 Z V m V o M « B W S *s e w N C NO NU VM «T 4 P Vjt V« f2Ï| Eäl Eil |äT| [sòl F51 Fai FT) F&l F&l f?+l Fai Linear CCD* Image Sensor 1024 pixels "LÜ [il UJ Ili 111 IsJ It]' [a]' [sj H lui y

sony ilx

Abstract: SONY CCD ILX
Contextual Info: SONY ILX5 0 8 A 7926-pixel CCD Linear Image Sensor B/W Description The ILX508A is a reduction type CCD linear sensor developed for high resolution copiers. This sensor reads A3-size documents at a density of 600 DPI (Dot Per Inch). A built-in timing generator and clock-drivers