FPE500
Abstract: lens photodiode phototransistor FPT102 FPA103 FPA104 FPE100 FPE104 FPE510 FPE520 FPE530
Contextual Info: Photodiodes D evice No. Vr 10V, H < 0.1 MW/cm2 Typ Max V Photodiode Hermetic Package 50 20 50 0.1 25 12 20 FPT720 Photodiode T1 Clear Epoxy 120 160 50 0.3 35 15 25 R q> 0.9 // Responsivity iiA/mW/cm2 No b ias, GaAs Typ R(Tungsten Responsivity fiA/ mW /cm2
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fpt102fpt720fpe100fpe104+7fpe500fpe510fpe520fpe530lens photodiode phototransistorfpa103fpa104
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FPT102
Abstract: FPT720
Contextual Info: 1-15 Photodiodes BV lR - 5.0 iiA, H < 0.1 IIW/cm» Min Typ vn V R Tungsten R Q 0.9 ii Responïivtty. Respontivity •r ■l T (jA/mW/cm1 iiA/mW/cm' V „« -1 0 V V „ = -1 0 V H £ 0.1 MW/cm> H —20 mW/em* Tc = 2854K No bias, GaAs Typ Max Min Typ Min Typ
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--10v2854kfpt102fpt720+1fpt1i02
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photodiode
Abstract: IR photodiode FPT102 FPT720
Contextual Info: 1-15 Photodiodes BV lR - 5 .0 i i A, Description H < 0.1 Min I I W/cm» vn Typ V •r V „«-10V ■l T V„=-10V R Tungsten Responïivtty. (jA /m W /cm 1 R Q 0 .9 i i Respontivity iiA /m W /c m ' H £ 0.1 MW/cm> Typ Max H — 20 m W /em * Min Typ Tc = 2 8 5 4 K
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--10v2854kfpt102fpt720+2photodiodeir photodiode
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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