27JUN05 Search Results

microcontroller atmega32

Abstract: stepper motor coil termination TMC249 TMC428 ATMEGA32 microcontroller programmer rs485 with atmega32 stepper motor controller SDA TMC428 atmel
Contextual Info: TMCM-111-56 56mm Stepper Motor Mechatronic Module Manual Version: 1.21 Oct 25th, 2006 Trinamic Motion Control GmbH & Co. KG Sternstraße 67 D - 20357 Hamburg, Germany Phone +49-40-51 48 06 - 0 FAX: +49-40-51 48 06 - 60 http://www.trinamic.com Copyright 2006, TRINAMIC Motion Control GmbH & Co. KG

IFC165PQ40

Abstract: pq40 PS-12 IFC165PS24 EN61000-3-3 EN61000-4-11 EN61000-4-3 EN61000-4-4 EN61000-4-5 IFC165
Contextual Info: AC-DC 165 Watts xppower.com IFC165 Series • Small Size - 3.0” x 5.0” x 1.25” • High Power Density • Active PFC Meets EN61000-3-2, -3 • Single, Dual, Triple & Quad Outputs • High Efficiency - up to 90% • Overvoltage and Overcurrent Protection

Contextual Info: Models 12S, 14S, 15S, 17S, 18S Vishay Techno 1/4" [6.35 mm] Sq. Wirewound Trimmers FEATURES • • • • • • APPLICATIONS Wirewound trimmers are particularly useful in those applications where any combination of high power, low temperature coefficient of resistance and/or excellent long

Si7405DN

Abstract: Si7405DN-T1
Contextual Info: Si7405DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) – 12 rDS(on) (Ω) ID (A) 0.016 at VGS = – 4.5 V – 13 0.022 at VGS = – 2.5 V – 11 0.028 at VGS = – 1.8 V – 9.8 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package

Si7401DN

Abstract: Si7401DN-T1
Contextual Info: Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.021 at VGS = – 4.5 V – 11 0.028 at VGS = – 2.5 V – 9.8 0.034 at VGS = – 1.8 V – 8.9 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package

Si7401DN

Abstract: Si7401DN-T1
Contextual Info: Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.021 at VGS = – 4.5 V – 11 0.028 at VGS = – 2.5 V – 9.8 0.034 at VGS = – 1.8 V – 8.9 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package

Si7810DN

Abstract: Si7810DN-T1 si7810dn-t1-e3
Contextual Info: Si7810DN Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.062 at VGS = 10 V 5.4 0.084 at VGS = 6 V 4.6 • TrenchFET Power MOSFET • New Low Thermal Resistance • PowerPAK® 1212-8 Package with Low

Si7703EDN-T1

Abstract: MOSFET ESD Rated Si7703EDN
Contextual Info: Si7703EDN Vishay Siliconix New Product Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) – 20 rDS(on) (Ω) ID (A) 0.048 at VGS = – 4.5 V – 6.3 0.068 at VGS = – 2.5 V – 5.3 0.090 at VGS = – 1.8 V – 4.6

Contextual Info: Si7806DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.011 @ VGS = 10 V 14.4 0.0175 @ VGS = 4.5 V 12.6 • TrenchFET Power MOSFET • PWM Optimized Pb-free Available • New Low Thermal Resistance Power

Contextual Info: Si7703EDN Vishay Siliconix New Product Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.048 @ VGS = –4.5 V –6.3 0.068 @ VGS = –2.5 V –5.3 0.090 @ VGS = –1.8 V –4.6 • TrenchFET Power MOSFETS: 1.8–V Rated

Contextual Info: Si7405DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (Ω) ID (A) 0.016 @ VGS = –4.5 V –13 0.022 @ VGS = –2.5 V –11 0.028 @ VGS = –1.8 V –9.8 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package

Si7922DN

Contextual Info: Si7922DN Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.195 @ VGS = 10 V 25 0.230 @ VGS = 6 V 23 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package, 1/3 the Space of An SO-8 While

Contextual Info: Si7810DN Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.062 @ VGS = 10 V 5.4 0.084 @ VGS = 6 V 4.6 • TrenchFET Power MOSFET • New Low Thermal Resistance • PowerPAK 1212-8 Package with Low 1.07-mm Profile

Contextual Info: Si7810DN Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.062 @ VGS = 10 V 5.4 0.084 @ VGS = 6 V 4.6 • TrenchFET Power MOSFET • New Low Thermal Resistance • PowerPAK 1212-8 Package with Low 1.07-mm Profile

Contextual Info: Si7634DP New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID rDS(on) (W) 30 (A)a 0.0052 @ VGS = 10 V 17 0.0076 @ VGS = 4.5 V 40 Qg (Typ) 21 nC D TrenchFETr Power MOSFET D 100% Rg Tested RoHS APPLICATIONS COMPLIANT D Notebook PC core

Contextual Info: Si7921DN Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) – 30 rDS(on) (Ω) ID (A) 0.063 at VGS = – 10 V – 5.1 0.110 at VGS = – 4.5 V – 3.8 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®

Contextual Info: Si7404DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.013 @ VGS = 10 V 13.3 0.015 @ VGS = 4.5 V 12.4 0.022 @ VGS = 2.5 V 10.2 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®

Contextual Info: Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.021 @ VGS = –4.5 V –11 0.028 @ VGS = –2.5 V –9.8 0.034 @ VGS = –1.8 V –8.9 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package

CISPR22

Abstract: EN61000-4-2 EN61000-4-3 EN61000-4-4 JPM160
Contextual Info: AC-DC 80-160 Watts xppower.com JPM Series • Low Cost • High Reliability • Power Factor Corrected • Suitable for Battery Charging Applications • Low Ripple & Noise • 125% Rating at 230 VAC • Optional Remote On/Off Specification Input General Input Voltage

15-V

Abstract: DG304B DG304BDJ DG306B DG306BDJ DG307B DG307BDJ 307B
Contextual Info: DG304B/306B/307B Vishay Siliconix CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Low Level Switching Circuits D Programmable Gain Amplifiers D Portable and Battery Powered Systems "15-V Input Range Fast Switching—tON: 110 ns Low rDS on : 30 W

Si7902EDN

Contextual Info: Si7902EDN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.028 at VGS = 4.5 V 8.3 0.030 at VGS = 3.7 V 8.0 0.043 at VGS = 2.5 V 6.7 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. R E V IS IO N S DIST GP 00 LTR DESCRIPTION RELEASED PER EC 0 S 1 3 - 0 2 0 7 - 0 5 DATE DWN APVD 2 7 JU N 0 5 sw JG D D 1 PARTS

Si7922DN

Contextual Info: Si7922DN Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.195 at VGS = 10 V 25 0.230 at VGS = 6 V 23 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package, 1/3 the Space of An SO-8 While

Si7414DN

Abstract: Si7414DN-T1
Contextual Info: Si7414DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8.7 0.036 at VGS = 4.5 V 7.3 • TrenchFET Power MOSFET • New Low Thermal Resistance • PowerPAK® 1212-8 Package with Low