27C256 UV Search Results

27c256

Abstract: Signetics 27c256 OT27C256
Contextual Info: Signetics 27C256 256K CMOS UV Erasable PROM 32 K x 8 Product Specification Military Application Specific Products DESCRIPTION CERDIP PIN CONFIGURATION The Signetics 27C256 CMOS EPROMs are 256K-BR 5V only memories organized as 32,768 words of 8 bits. They employ

27C32

Abstract: 27C256s eprom 27c256 eprom 27C16 27C128 27C256 27C512 27C64 C1995 27C256 General Semiconductor
Contextual Info: 27C256 262 144-Bit 32 768 x 8 UV Erasable CMOS PROM Military Qualified General Description Features The 27C256 is a high-speed 256K UV erasable and electrically reprogrammable CMOS EPROM ideally suited for applications where fast turnaround pattern experimentation

Philips FA 291

Abstract: 27C256A12A 27C256 Signetics 27c256 eprom 27c256 dfp 740 27C256-15FA 550mi 27C256-15 27C256-17
Contextual Info: OEC 2 6 1990 Philips Components-Signetics Document No. 853-0094 ECN No. 01040 Date of Issue November 12,1990 Status Product Specification 27C256 256K-bit CMOS EPROM 32K x 8 Memory Products PIN CONFIGURATION DESCRIPTION FEATURES Philips Components-Signetics 27C256

Contextual Info: 27C256 M icrochip 256K 32K x 8 CMOS EPROM FEATURES DESCRIPTION High speed performance The Microchip Technology Inc 27C256 is a CMOS 256K — 90ns maximum access time bit (electrically) Programm able Read Only Memory. The CMOS Technology for low power consumption

Contextual Info: b5Q112b NATL SEMICOND MEMORY 3 3 1E D March 1989 _ i i l Semiconductor 27C256 262,144-Bit (32,768 x 8) UV Erasable CMOS PROM Military Qualified 35-V General Description Features The 27C256 is a high-speed 256K UV erasable and electri­ cally reprogrammable CMOS EPROM, Ideally suited for ap­

Contextual Info: & 27C256 Microchip 256K 32K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc 27C256 is a CMOS 256K — 90ns access time available • CMOS Technology for low power consumption bit (electrically) Programmable Read Only Memory. The

Contextual Info: 27C256 & Microchip 256K 32K x 8 CMOS EPROM DESCRIPTION FEATURES The Microchip Technology Inc 27C256 is a CMOS 256K bit (electrically) Programmable Read Only Memory. The device is organized as 32K words by 8 bits (32K bytes). Accessing individual bytes from an address transition or

Contextual Info: GENERAL INSTRUMENT 27C256 PRELIMINARY INFORMATION 256K 32K x 8 CMOS UV Erasable PROM FEATURES PIN CONFIGURATIONS Top View V p p E •1 A 12C 2 28 □ VDD 27 □ A14 A7tZ 3 26 H A13 A6 C 4 25 □ A8 A5C 5 24 □ A9 A4 d The 27C256 is available in an extensive selection of

eprom 27c256 28 PIN DIP 120 NS

Contextual Info: TM NM27C256 262,144-Bit 32K x 8 High Performance CMOS EPROM General Description The NM 27C256 is one m em ber of a high density EPROM Family which range in densities up to 4 Mb. The NM 27C256 is a 256K Electrically Program mable Read Only Memory. It is m anufactured in Fairchild’s latest CM OS split gate

Contextual Info: & 27C256 Microchip 256K 32K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc 27C256 is a CMOS 256K bit (electrically) P rogramm able Read Only Memory. The — 90ns access time available device is organized as 32K words by 8 bits (32K bytes).

27C256

Abstract: OT27C256 Signetics 27c256 2561b U 2561B 27C256/BUA-20 BXA-20 27C256 UV
Contextual Info: NAPC/ S I G N E T I C S / M I L I T AR Y 5bE D • GQQ2QDB S T Signetics - y 27C256 256K CMOS UV Erasable PROM 32 K x 8 Product Specification Military Application Specific Products DESCRIPTION CERDIP PIN CONFIGURATION The Signetics 27C256 CMOS EPROMs are 256K-Bit 5V only memories organized

27C2560

Abstract: 27c256 intel intel EPROM 27128 27C256-2 27C256 27C2S6 23136 intel Automotive eprom 2716 eprom 27c256
Contextual Info: in t e T 27C256 256K 32K x 8 CHMOS PRODUCTION AND UV ERASABLE PROMS Automotive Noise Immunity Features — ± 10% Vcc Tolerance — Maximum Latch-up Immunity Through EPI Processing New Qulck-Pulse Programming" Algorithm — 4 Second Programming Available In 28-Pin Cerdip Package

Contextual Info: MICROCHIP TECHNOLOGY INC ESE D blü3201 0DG47Ô1 4 • <3.-251 27C256 Microchip 256K 32K x 8 CMOS UV Erasable PROM FEATURES DESCRIPTION • High speed performance —150ns maximum access time. • CMOS Technoiogy for low power consumption —20mA Active current

IT-40

Abstract: seeq 27128
Contextual Info: 1992 Data Book ~7V~.- OV~&T~OGQS 64/1281’256K UVEPROMs PART NUMBER 2764 2764 2764 2764 2764 2764 27128 27128 27128 27128 27128 270256 27C256 270256 270256 ORGANIZATION ACCESS 8Kx8 8Kx8 8Kx8 BKx8 8Kx8 8Kx8 16Kx8 16Kx8 16Kx8 16Kx8 16Kx8 32Kx8 32Kx8 32Kx8 32Kx8

Signetics 27c256

Abstract: 27C256 UV 27C256 F0342
Contextual Info: S i g n e t i c s Military Application Specific Products DESCRIPTION 1 2 7 C 2 5 6 I I 256K CMOS UV Erasable PROM 32Kx8 | Product Specification CERDIP PIN CONFIGURATION The Signetics 27C256 CMOS EPROMs are 2S6K-BK 5 V only memories organized as 32,768 words of 8 bits. They employ

27C256

Abstract: eprom 27c256 28 PIN DIP 150 NS 27C256-12 signetics eprom 27c256 28 PIN DIP 150 NS j package signetics 27C256 27c256 signetics eprom 27c256 28 PIN DIP 120 NS 27C256DC ti 27c256 27C256-12
Contextual Info: Philips Components-Signetics 27C256 Document No. 8 53 -0 0 94 ECN No. 01040 Date of Issue Novem ber 12, 1990 Status Product Specification 256K-bit CMOS EPROM 32K x 8 Memory Products PIN CONFIGURATION DESCRIPTION FEATURES Philips Com ponents-Signetics 2 7C 256

27CS12

Abstract: 27C256-200V10 27C126 27c256-200 D27c256b intel 27126 intel PLD 27C256
Contextual Info: INTEL CORP flEflORY/PLD/ 44E D 405bl7b GDVIS^ ' T 7% in ta l T • ITL2 ' ß - 2 ci 27C256 256K (32K x 8 CHMOS EPROM High Speed — 120 ns Access Time Low Power Consumption — 100 /xA Standby, 30 mA Active Fast Programming — Quick-Pulse Programming

27C256-25 microchip

Abstract: 27C256 UV 27C256-25
Contextual Info: 27C256 & M icroch ip 256K 32K x 8 CMOS UV Erasable PROM FEATURES DESCRIPTION • High speed performance T h e Microchip Technology Inc 2 7 C 2 5 6 is a C M O S 2 56K — 150ns m axim um access time bit ultraviolet light Erasable (electrically) Program m able

N27C256-200V10

Contextual Info: in t j, 27C256 256K 32K x 8 CHMOS EPROM • High Speed — 120 ns Access Time ■ Low Power Consumption — 100 juA Standby, 30 mA Active ■ Fast Programming — Quick-Pulse Programming Algorithm — Programming Time as Fast as 4 Seconds ■ EPI Processing

Contextual Info: M 27C256 ic r o c h ip 256K 32K x 8 CMOS EPROM FEATURES PIN CONFIGURATION • High speed performance — 90 ns access time available • CMOS Technology for low power consumption — 20 mA Active current — 100 (iA Standby current • Factory programming available

27C256-200V10

Abstract: eprom 27c256 28 PIN DIP 120 NS P27C256-120V10 27C256DC INTEL 27128A EPROM 2732A INTEL 24 PIN CERAMIC DIP 27C256 N27C256-150V10 386TM
Contextual Info: In te l’ 27C256 256K 32K x 8 CHMOS EPROM High Speed — 120 ns Access Tim e EPI Processing — Maximum Latch-up Immunity Low Pow er Consumption — 100 juA Standby, 30 mA Active Simple Interfacing — T w o Line Control — CMOS and TTL Com patible Fast Programming

Contextual Info: 27C256 256K 32K x 8 CHMOS PRODUCTION AND UV ERASABLE PROMS Automotive • Noise Immunity Features — ± 10% Vcc Tolerance — Maximum Latch-up Immunity Through EPI Processing ■ New Quick-Pulse P ro g ra m m in g tm Algorithm — 4 Second Programming ■ Available in 28-Pin Cerdlp Package

27c080

Abstract: 27C512 SMD
Contextual Info: EM ICDNDUCTOR J anuary 1998 t FM27C256 262,144-Bit 32K x 8 High Speed CMOS EPROM General Description The FM 27C256 is a High Perform ance 32K x 8 UV Erasable EPROM. It is m anufactured using an advanced C M OS pro­ cess technology enabling it to operate at speeds as fast as

Contextual Info: M 27C256 ic r o c h ip 256K 32K x 8 CMOS EPROM FEATURES PIN CONFIGURATION • High speed performance — 90 ns access time available • CMOS Technology for low power consumption — 20 mA Active current — 100 nA Standby current • Factory programming available