27132 Search Results

SOP 8 200MIL

Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Contextual Info: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with

HN58X2508FPIE

Abstract: HN58X2508I HN58X2508TIE HN58X2516FPIE HN58X2516I HN58X2516TIE
Contextual Info: HN58X2508I HN58X2516I Serial Peripheral Interface 8k EEPROM 1024-word x 8-bit 16k EEPROM (2048-word × 8-bit) Electrically Erasable and Programmable Read Only Memory REJ03C0222-0200 Rev.2.00 Aug.19.2004 Description HN58X25xxx Series is the Serial Peripheral Interface (SPI) EEPROM (Electrically Erasable and

Contextual Info: M65665DSP PICTURE-IN-PICTURE SIGNAL PROCESSING REJ03F0012-0100Z Rev.2.00 Sep.04.2003 Description The M65665DSP is a PIP Picture in Picture signal processing LSI, whose sub-picture input is composite signal or component signals(Y/C or Y/U/V) for NTSC , PAL-M , PAL-N. The built-in field memory (168k-bit RAM) , V-chip

Contextual Info: M65665CFP/SP PICTURE-IN-PICTURE SIGNAL PROCESSING REJ03F0011-0100Z Rev.2.00 Sep.04.2003 Description The M65665CFP/SP is a PIP Picture in Picture signal processing LSI, whose sub-picture input is composite signal or component signals(Y/C or Y/U/V) for NTSC.

Contextual Info: 2SK2980 Silicon N Channel MOS FET High Speed Power Switching REJ03G1061-0400 Previous: ADE-208-571B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA) • 2.5 V gate drive devices. • Small package (MPAK)

Contextual Info: M54678FP 2-Phase Stepper Motor Driver REJ03F0046-0100Z Rev.1.0 Sep.19.2003 Description The M54678FP is a semiconductor integrated circuit designed for stepper motor driver used to printer, PPC and facsimile. Features • • • • • • Wide supply voltage range 10 – 35V

Contextual Info: 2SK3390 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0208-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60% min. f = 836 MHz • Compact package capable of surface mounting

Contextual Info: FX30KMJ-06 High-Speed Switching Use Pch Power MOS FET REJ03G1446-0200 Previous: MEJ02G0276-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : –60 V rDS(ON) (max) : 54 mΩ ID : –30 A Integrated Fast Recovery Diode (TYP.) : 55 ns

ha17903

Contextual Info: HA17903 Series Dual Comparator REJ03D0687-0100 Previous: ADE-204-048 Rev.1.00 Jun 15, 2005 Description HA17903 are comparators designed for car use and control system use. They provide wide voltage range with single power source, and the change of supply current is small, because it is

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: 2SK2144 Silicon N Channel MOS FET REJ03G1001-0200 Previous: ADE-208-1349 Rev.2.00 Sep 07,2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for switching regulator, DC-DC converter

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: M64893AGP SERIAL INPUT PLL FREQUENCY SYNTHES IZER FOR TV/VCR REJ03F0008-0100Z Rev.1.00 Jul.25.2003 Description The M64093FP is a semiconductor integrated circuit consisting of PLL frequency synthesizer for TV/VCR using BiCMOS process. It contains prescaler with operating up to. 1.0 GHz, 4 band driver and a tuning amplifier for direct

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: HSD226 Silicon Schottky Barrier Diode for High Speed Switching REJ03G0603-0400 Rev.4.00 Feb 06, 2007 Features • Low Power consumption Low reverse leak current and high speed (Low capacitance). • Lineup of Environmental friendly Halogen free type (HSD226-N)

Contextual Info: HD74HCT640 Octal Bus Transceivers with inverted 3-state outputs Octal Bus Transceivers (with 3-state outputs) REJ03D0672–0300 (Previous ADE-205-562A) Rev.3.00 Mar 30, 2006 Description The HD74HCT640 has one active low enable input (G), and a direction control (DIR). When the DIR input is high,

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: FS10ASJ-2 High-Speed Switching Use Nch Power MOS FET REJ03G1408-0200 Previous: MEJ02G0061-0101 Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 4 V VDSS : 100 V rDS(ON) (max) : 0.19 Ω ID : 10 A Integrated Fast Recovery Diode (TYP.) : 95 ns

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: TBB1017 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier REJ03G1469-0100 Rev.1.00 Aug 07, 2006 Features • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Very useful for total tuner cost reduction.

pj 929 diode

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: HD74HCT620, HD74HCT623 Octal Bus Transceivers with inverted 3-state outputs Octal Bus Transceivers (with 3-state outputs) REJ03D0671–0200 (Previous ADE-205-561) Rev.2.00 Mar 30, 2006 Description This octal bus transceiver is designed for asynchronous two-way communication between data buses. The control