2640MW Search Results

MB81C1000

Contextual Info: May 1990 FUJITSU IPRODUCT PROFILE: MB85260 - 80/ - 10/-12 CMOS 1M X 8 LOW PROFILE DRAM MODULE The Fujitsu MB85260 is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB81C1000 devices. The MB85260 is optimized for those applications requiring high speed, high

Contextual Info: OKI semiconductor MSC23B136B-xxBS4/DS4 1,048,576 Word By 36 Bit DYNAMIC RAM MODULE : FAST PAGE MODE_ GENERAL DESCRIPTION The Oki MSC23B136B-xxBS4/DS4 is a fully decoded, 1,048,576 word X 36 bit CMOS dynamic random access memory composed of two 16Mb 1Mx16 DRAMs and two 2Mb{1 Mx2) DRAMs in SOJ.

THM81000AS

Abstract: TC511000AJ TC511000A
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS THM81000AS/AL-70, 80,10 THM81020AL-70, 80, 10 DESCRIPTION; The THM81000AS is 8 pcs of TC511000AJ on The THM81000AS is high density and large memory systems, and to a 1,048,576 words by 8 bits dynamic RAM module which assembled the printed circuit board.

Contextual Info: MITSUBISHI LS Is {DRAM MODULE M H 2 M 3 2 C L J -5 ,-6 ,-7 / M H 2 M 3 2 C N L J -5 ,-6 ,-7 FAST PAGE MODE 67108864-BIT 2097152-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) [Slngl* side] The MH2M32CLJ/CNLJ is a 2097152-word x 32-bit dynamic

136B

Abstract: MSC23B136B-60BS4
Contextual Info: OKI semiconductor MSC23B136B-xxBS4/DS4 1,048,576 Word By 36 Bit DYNAMIC RAM MODULE : FAST PAGE MODE_ GENERAL DESCRIPTION The Oki MSC23B136B-xxBS4/DS4 is a fully decoded, 1,048,576 word X 36 bit CMOS dynamic random access memory composed of two 16Mb 1Mx16 DRAMs and two 2Mb(1 Mx2) DRAMs in SOJ.

Contextual Info: MITSUBISHI LS Is <DRAM MODULE MH2M32CLJ-5,-6,-7/ MH2M32CNLJ-5,-6,-7 FAST PAGE MODE 67108864-BIT 2097152-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) [Single side] The MH2M32CLJ/CNLJ is a 2097152-word x 32-bit dynamic RAM and consists of 4 industry standard 2M x 8 dynamic

Contextual Info: May 1990 FUJITSU IP R O D U C T p r o f i l e : MB 85260A -60/-70/-80/-10 CMOS 1M x 8 LO W PROFILE DRAM MODULE The Fujitsu MB85260A is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB81C1000A devices. The MB85260A is optimized for those applications requiring high speed, high

125OC

Abstract: IMM1481-70BSC 2640mW
Contextual Info: INNOVATIVE IMM1481 2M X 8 SRAM Module Features • 4.5V - 5.5V Operation • CMOS for optimum speed/power • Low active power —2640mW max. • Low standby power (Commercial L version) —11.0mW (max.) • Automatic power-down when deselected • Easy memory expansion with CE and OE options.