25JUN12 Search Results
25JUN12 Datasheets Context Search
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Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2600 MHz 4.7 VDC 2900 MHz Tuning Voltage: 0.3 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +2.0 +5.0 +8.0 dBm 15 25 mA Harmonic Suppression 2 Harmonic : |
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10khz100khzcvco55be-2600-290025-jun-12 | |
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Contextual Info: SS1P3, SS1P4 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement eSMP Series • Low forward voltage drop, low power losses |
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j-std-020do-220aa2002/95/ec2011/65/eu+2 | |
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Contextual Info: SQ9945BEY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V 0.064 RDS(on) () at VGS = 4.5 V 0.082 ID (A) per leg 6 Configuration |
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sq9945beyaec-q101sq9945bey-t1-ge32011/65/eu+2 | |
Si4190ADY
Abstract: si41
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si4190ady2011/65/eu2002/95/ec12-mar-12+1 | |
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Contextual Info: SS1P3, SS1P4 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement eSMP Series • Low forward voltage drop, low power losses |
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j-std-020do-220aa2011/65/eu2002/95/ec+1 | |
62639Contextual Info: SiS472ADN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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sis472adnan6092962u4146u+7 | |
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Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2650 MHz 7.5 VDC 2700 MHz Tuning Voltage: 0.5 Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +4.0 +6.0 +8.0 dBm 15 25 mA Harmonic Suppression 2 Harmonic : |
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10khz100khzcvco55be-2650-270025-jun-12 | |
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Contextual Info: VS-30CTH03PbF, VS-30CTH03-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 15 A FRED Pt FEATURES Base common cathode 2 • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current |
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vs-30cth03pbfvs-30cth03-n3o-220abjedec-jesd47+3 | |
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Contextual Info: REVISIONS THIRD ANGLE PROJ. NOTES: 1. MATERIALS AND FINISHES: BODY - ZINC DIE CAST, NICKEL PLATING CONTACT - PHOSPHOR BRONZE, GOLD PLATING .000003 THICK @ CONTACT AREA ONLY, TIN PLATING AT TAIL, NICKEL PLATED OVERALL INSULATOR - POLYPROPYLENE HOUSING - PBT 15% G.F. , WHITE |
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min/15mil-std-34825-jun-12 | |
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Contextual Info: 4 3 T H IS D R AW IN G IS U N P U B L IS H E D . C O PYR IG H T - R EVIS IO NS - , - A LL RIG HTS R ESER VED . By - DIRRRCGRIC ,000035-,000065 GGGD PR PGR M IR-G-45G 04 GVOR ,000145-,000275 NICKGG PR POR AM S-Q Q -N -290 NXA O-RING 000050- 000100 GGGD PR |
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asgma583asgm-d-1710c17300ig-r-35988+4 | |
vcnl 3020
Abstract: VCNL3020 VCNL4020 VCNL3020GS08
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vcnl3020j-std-0202002/95/ec2011/65/eu+5 | |
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Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2495 MHz 4.5 VDC 2625 MHz Tuning Voltage: 0.5 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: -3.0 +3.0 dBm 25 mA Pushing: 1.0 MHz/V |
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10khz100khzcvco55be-2495-262525-jun-12 | |
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Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2186 MHz 4.5 VDC 2250 MHz Tuning Voltage: 0.5 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +3.0 +5.0 +7.0 dBm 20 35 mA Harmonic Suppression 2 Harmonic : |
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10khz100khzcvco55cc-2186-225025-jun-12 | |
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Contextual Info: VS-30CTH03PbF, VS-30CTH03-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 15 A FRED Pt FEATURES Base common cathode 2 • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current |
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vs-30cth03pbfvs-30cth03-n3o-220abjedec-jesd47+3 | |
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30Q10
Abstract: IHLP1616BZ-11 IHLP-1616BZ-11 IHLP-1616BZ
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ihlp-1616bz-112011/65/eu2002/95/ec12-mar-12+3 | |
week code SILICONIXContextual Info: Part Marking Information www.vishay.com Vishay Siliconix DEVICES: PowerPAK SO-8 PowerPAK SO-8L PowerPAK 1212-8 PowerPAIR® 6 x 3.7 PowerPAK 1212-8S PowerPAIR 6 x 5 PowerPAIR 3 x 3 Single and Dual 7401 LL TYWF 7401 = Example Base Part Number or marking codea |
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1212-8s25-jun-12week code siliconix | |
PowerPAK 1212-8
Abstract: 1212-8S
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1212-8sspecification-pack-0007-1425-jun-12powerpak 1212-8 | |
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Contextual Info: VS-20CTH03PbF, VS-20CTH03-N3, VS-20CTH03FPPbF, VS-20CTH03FP-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 10 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature TO-220AB |
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vs-20cth03pbfvs-20cth03-n3vs-20cth03fppbfvs-20cth03fp-n3+4 | |
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Contextual Info: SQ9945BEY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V 0.064 RDS(on) () at VGS = 4.5 V 0.082 ID (A) per leg 6 Configuration |
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sq9945beyaec-q101sq9945bey-t1-ge32002/95/ec+3 | |
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Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2550 MHz 4.5 VDC 2570 MHz Tuning Voltage: 0.5 Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +2.0 +4.0 +6.0 dBm 30 mA Pushing: 2.0 MHz/V |
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10khz100khzcvco55be-2550-257025-jun-12 | |
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Contextual Info: SQ9945BEY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V 0.064 RDS(on) () at VGS = 4.5 V 0.082 ID (A) per leg 6 Configuration |
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sq9945beyaec-q101sq9945bey-t1-ge32011/65/eu+2 | |
AMPHENOL 999-226
Abstract: AMPHENOL BNC 999-226 999-226 amphenol 999-226 AMPHENOL+999-226
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min/1525-jun-1231-5539-xxxxamphenol 999-226+4 | |