25JUN09 Search Results
25JUN09 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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EIA-364-70
Abstract: Z-PACK EIA-364-13 EIA-364-20 EIA-364-21 EIA-364-27 EIA-364-28 108-1651 108-19082
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25jun0920apr09eia-364-70z-pack+7 | |
mini usb type b
Abstract: 651005136421
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ul94-v022-jun-1125-jun-0925-feb-09+5 | |
TSHG5210Contextual Info: TSHG5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 850 nm |
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tshg52102002/95/ec2002/96/ec11-mar-11 | |
TSHF5210
Abstract: 81313
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tshf52102002/95/ec2002/96/ec18-jul-08+1 | |
sharp laser diodes
Abstract: TSOP855
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vse-db0090-1010sharp laser diodestsop855 | |
main distribution frame
Abstract: XGPU2 PTCTL7 PTC 09 ptc application note PTCTL4MR500SBE IEC60286-2 PTCTL6MR250STE ptc resistor 300 to 500 e ptc thermistor for overcurrent protection
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18-jul-08main distribution framexgpu2ptctl7+7 | |
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Contextual Info: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power |
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v20120svf20120svb20120svi20120s+5 | |
2068 DDContextual Info: MIL-C-28748/7/8 Vishay Dale Rack and Panel Connectors Military, MIL-C-28748/7/8 Qualified Microminiature Rectangular with Optional Hoods FEATURES • Qualified to MIL-C-28748/7/8 • Solder cup contacts • Fixed and turnable screwlocks • Closed entry socket contacts |
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mil-c-28748/7/8mil-c-28748500any18-jul-08+1 | |
S102
Abstract: S102C S102K Z201 S102CT vishay s102c
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18-jul-08s102s102cs102k+3 | |
ACS 0865Contextual Info: WVL Vishay Dale Inductors, Variable, Subminiature, Shielded, Radial Leaded FEATURES • Classification is grade 3, class A • Subminiature shielded adjustable inductor • High Q values • Vertical or horizontal mounting • Inductance range is 0.10 H to 1000 μH |
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18-jul-08acs 0865 | |
TSHF5410Contextual Info: TSHF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 890 nm |
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tshf54102002/95/ec2002/96/ec11-mar-11 | |
TSHA6203
Abstract: TSHA620 TSHA6200 TSHA6201 TSHA6202
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tsha6200tsha6201tsha6202tsha6203+4 | |
TSHF5210Contextual Info: TSHF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES DESCRIPTION • • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off |
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tshf52102002/95/ec2002/96/ec11-mar-11 | |
J-STD-002
Abstract: 1412D
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v20120svf20120svb20120svi20120s+7 | |
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TSUS5400
Abstract: TSUS5402 TSUS5401 TSUS-5402
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tsus5400tsus5401tsus54022002/95/ec+3 | |
Rack and Panel Connectors
Abstract: sgm26
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vse-db0031-1003rack and panel connectorssgm26 | |
LR7189Contextual Info: 6 7 T H IS DRAW ING COPYRIGHT IS U N P U B L IS H E D . - RELEASED BY TYCO ELECTRON ICS CORPORATION. FO R 4 3 2 PU BLICATIO N A L L R IG H T S LOC RESERVED. j m J} z h m SZ o m m >i mr z° 73 O O Ö ^ l ) CABLE ASSEMBLY ( |ucozgoo LR71S9—172 FLEXIBLE METAL CONDUIT |
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listed/5604lr7189s3noi3d33x3nis-31n3iyy03+6 | |
CA111
Abstract: TSOP58 TSOP59 TSOP38
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2002/95/ec2002/96/ectsop58tsop59+6 | |
AT91 USB HID Driver Implementation
Abstract: usb trackball mouse thumb joystick AT91LIB ARM at91sam7se AT91SAM7S-EK scrolling led display atmel AT91SAM
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6273b29-jun-09at91 usb hid driver implementationusb trackball mouse+6 | |
LLP1006-2M
Abstract: vcut05b1-dd1
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vcut05b1-dd1llp1006-2m2002/95/ec2002/96/ec+1 | |
TSHF6410Contextual Info: TSHF6410 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Peak wavelength: λp = 890 nm High reliability |
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tshf64102002/95/ec2002/96/ec18-jul-08 | |
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Contextual Info: TSHF6210 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Peak wavelength: λp = 890 nm High reliability |
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tshf62102002/95/ec2002/96/ec11-mar-11 | |
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Contextual Info: VBUS053AZ-HAF Vishay Semiconductors USB-OTG BUS-Port ESD-Protection for VBUS = 12 V Features • Ultra compact LLP75-7L package • Low package height < 0.6 mm • 3-line USB ESD- protection with max. working range = 5.5 V • VBUS - protection with 12 V working |
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vbus053az-hafllp75-7l2002/95/ec2002/96/ec+1 | |
TSHF6410Contextual Info: TSHF6410 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Peak wavelength: λp = 890 nm High reliability |
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tshf64102002/95/ec2002/96/ec11-mar-11 | |