25JUL2011 Search Results

CR95HF

Abstract: DEMO-CR95HF-A STM32F103CB STM32F103 13,56 mhz antenna ISO15693 antenna
Contextual Info: DEMO-CR95HF-A Demonstration kit for the CR95HF 13.56 MHz transceiver IC Data brief Features • Ready to use printed circuit board – CR95HF cut 1.2 multiprotocol transceiver IC – STM32F103CB 32-bit microcontroller – 47 x 34 mm 13.56 MHz inductive etched

Contextual Info: ADS830 AD S83 ¤ SBAS086A – APRIL 2001 8-Bit, 60MHz Sampling ANALOG-TO-DIGITAL CONVERTER TM FEATURES DESCRIPTION ● HIGH SNR: 49.5dB ● INTERNAL /EXTERNAL REFERENCE OPTION ● SINGLE-ENDED OR DIFFERENTIAL ANALOG INPUT ● PROGRAMMABLE INPUT RANGE: 1Vp-p /2Vp-p

Contextual Info: ADS4222, ADS4225, ADS4226 ADS4242, ADS4245, ADS4246 SBAS533C – MARCH 2011 – REVISED JUNE 2011 www.ti.com Dual-Channel, 14-/12-Bit, 160/125/65MSPS Ultralow-Power ADC Check for Samples: ADS4222, ADS4225, ADS4226, ADS4242, ADS4245, ADS4246 FEATURES APPLICATIONS

threshold angular velocity in a gyroscope

Contextual Info: TA0343 Technical article Everything about STMicroelectronics’ 3-axis digital MEMS gyroscopes Executive summary STMicroelectronics ST , the leading worldwide supplier of MEMS motion sensors(a), introduced in early 2010 an innovative 3-axis digital gyroscope in a 4 x 4 x 1.1 mm LGA

Contextual Info: TPS2410 TPS2411 www.ti.com . SLVS727C – NOVEMBER 2006 – REVISED JUNE 2009 Full Featured N+1 and ORing Power Rail Controller

Contextual Info: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 48 A 30 mΩ 135 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID TO-254AA • SEE radiation hardened

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened

BQ25050

Contextual Info: bq25050 www.ti.com SLUSA33 – MARCH 2010 1A, Single-Input, Single Cell Li-Ion Battery Charger with 50-mA LDO, External Power Path Control, and Single Input Interface Check for Samples: bq25050 FEATURES 1 • • • • • • • • • • • DESCRIPTION

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened

ST T8 1060

Abstract: ST T4 1060 l0741 L0148 1090mhz ATC100A300JP
Contextual Info: STAC1011-350 LDMOS avionics radar transistor Datasheet — preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 350 W with 15 dB gain over 1030 1090 MHz ■ ST Air Cavity / STAC package Description

simple 5.1 home theater circuit diagram with usb port

Contextual Info: high performance low power computing Colibri T20 Datasheet Toradex AG l Altsagenstrasse 5 l 6048 Horw l Switzerland l +41 41 500 48 00 l www.toradex.com l info@toradex.com Colibri T20 Datasheet Page | 2 Revision History Date Doc. Rev. Colibri T20 Version Changes

AZ4229

Abstract: ADS4229
Contextual Info: ADS4229 SBAS550 – JUNE 2011 www.ti.com Dual-Channel, 12-Bit, 250-MSPS Ultralow-Power ADC Check for Samples: ADS4229 FEATURES APPLICATIONS • • • • • 1 23 • • • • • • • Maximum Sample Rate: 250 MSPS Ultralow Power with Single 1.8-V Supply:

strh40p10

Abstract: STRH40P10HYG MIL-STD-750E STRH40P10HY1 STRH40P10H
Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2

S9NZB32C2

Abstract: wifi mac transmitter STM32W108CB SPZB32W1
Contextual Info: SPZB32W1x2.1 ZigBee PRO modules based on the STM32W chipset Features • 2.4 GHz IEEE 802.15.4-compliant SMD modules based on the ST single chip STM32W108CB featuring: – Integrated 2.4 GHz transceiver – PHY and MAC IEEE 802.15.4 features – Integrated ARM Cortex-M3 core

4,7k thermistor

Abstract: NCP15WB473F SLUA271 4.7K NTC BQ25050
Contextual Info: bq25050 www.ti.com SLUSA33 – MARCH 2010 1A, Single-Input, Single Cell Li-Ion Battery Charger with 50-mA LDO, External Power Path Control, and Single Input Interface Check for Samples: bq25050 FEATURES 1 • • • • • • • • • • • DESCRIPTION

Contextual Info: SN74LVC08A-Q1 QUADRUPLE 2-INPUT POSITIVE-AND GATE SCES480C − AUGUST 2003 − REVISED JANUARY 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 2000 V Per D D D D D D OR PW PACKAGE TOP VIEW MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Doc ID 17486 Rev 7

Contextual Info: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite

Contextual Info: TPS2410 TPS2411 www.ti.com . SLVS727C – NOVEMBER 2006 – REVISED JUNE 2009 Full Featured N+1 and ORing Power Rail Controller

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite

114-18063-1

Abstract: 114-18063 114-18061 114-18063-12 PBT-GF15
Contextual Info: 7 Anschlussbereich fuer Wellrohradapter CONNECTING AREA FOR CORRUGATED TUBE ADAPTER LOC AI BLACK/ schwarz 5-967616-2 C-C SCALE 2:1 11 14 - P SECTION A-A AENDERUNGEN LTR 95-52420 LIEFERZUSTAND 2.Kontaktsicherung in Vorrastellung DESCRIPTION F4 see ECR-11-015154

STM32W RF

Abstract: STM32W108CB
Contextual Info: SPZB32W1x2.1 ZigBee PRO modules based on the STM32W chipset Features • 2.4 GHz IEEE 802.15.4-compliant SMD modules based on the ST single chip STM32W108CB featuring: – Integrated 2.4 GHz transceiver – PHY and MAC IEEE 802.15.4 features – Integrated ARM Cortex-M3 core

Contextual Info: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID TO-254AA • SEE radiation hardened

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened