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    25H25 Search Results

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    Panduit Corp LWC25-H25-C20

    Latching wire clip push barb mount .25 (6.4mm) bundle black.
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    Master Electronics LWC25-H25-C20 1,039
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    Avnet Americas LWC25-H25-C20 Bulk 14 Weeks 1,000
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    Newark () LWC25-H25-C20 Pack 1
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    LWC25-H25-C20 Pack 10
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    Panduit Corp LWC25-H25-C

    Cable Clamps and Clips Latching Wire Clip Push Barb Nylon 6/6 Natural 6.4mm
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    Master Electronics LWC25-H25-C 1,000
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    Avnet Americas LWC25-H25-C Bulk 14 Weeks 1,000
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    RS LWC25-H25-C Package 8 1
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    Panduit Corp PC125-H25D-C0

    Pan-Clamp™ heavy duty fixed diameter clamp 1.25 (31.8mm) bundle black standard package.
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    Master Electronics PC125-H25D-C0 200
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    Newark () PC125-H25D-C0 Pack 1
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    PC125-H25D-C0 Pack 5
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    Sager PC125-H25D-C0 500
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    ITT Interconnect Solutions APKPB25H25002

    Contact PIN Crimp ST Cable Mount Reel
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    Master Electronics APKPB25H25002
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    Avnet Americas APKPB25H25002 Bulk 8 Weeks 5
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    Newark APKPB25H25002 Bulk 5
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    Avnet Abacus APKPB25H25002 9 Weeks 5
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    ITT Interconnect Solutions APKSB25H25002

    Vector/Apd/Harness/Others |Itt Cannon APKSB25H25002
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    Avnet Americas APKSB25H25002 Bulk 8 Weeks 5
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    Newark APKSB25H25002 Bulk 5
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    25H25 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    25H2501

    Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2500 16 1.66 0.57 1400 V A kA V Gate turn-off Thyristor 5SGA 25H2501 mΩ V Doc. No. 5SYA1206-01 Dec. 04 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original
    25h25015sya1206-01ch-5600 PDF

    Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2500 16 1.66 0.57 1400 V A kA V mW V Gate turn-off Thyristor 5SGA 25H2501 Doc. No. 5SYA1206-01 Jun. 04 • Patented free-floating silicon technology · Low on-state and switching losses · Annular gate electrode


    Original
    25h25015sya1206-01ch-5600 PDF

    1206-01

    Abstract: 25H25 25H2501 ABB 5SGA ABB thyristor 5 GTO ABB GTO thyristor ABB
    Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2500 16 1.66 0.57 1400 V A kA V Gate turn-off Thyristor 5SGA 25H2501 mΩ V Doc. No. 5SYA 1206-01 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original
    25h2501ch-56001206-0125h25+4abb 5sgaabb thyristor 5gto abbgto thyristor abb PDF

    Contextual Info: Key Parameters VDRM = 2500 ITGQM = 2500 ITSM = 16 VT0 = 1.66 rT = 0.57 VDClink = 1400 V A kA V Gate turn-off Thyristor 5SGA 25H2501 mΩ V Doc. No. 5SYA 1206-01 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original
    25h2501ch-5600 PDF

    5SDF01R2501

    Abstract: 5SGA 5SGA30J2501 RTK 031
    Contextual Info: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt­ grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes­


    OCR Scan
    01r250105d250115f250220h2501+925h250130j250120h450211f250103d45015sdf01r25015sga5sga30j2501rtk 031 PDF

    SG600EX21

    Abstract: SG600R21 FG2000DV-90 FG2000DV90 westcode cross reference SG1000R23 SG1000EX23 FG1000AH SG700EX22 DG406BP18
    Contextual Info: Gate Turn-off Thyristor Cross Reference DS5549 Gate Turn-off Thyristor Cross Reference DS5549-1.1 May 2002 ABB - DYNEX ITQRM µF Cs µ ABB Part Number Voltage Maximum CSG 1501-25A01 2500 1500 3 Dynex Nearest Equivalent Part Number DG406BP25 CSG 2001-25A01


    Original
    ds5549ds5549-11501-25a01dg406bp25+152001-25a01dg646bh252003-45a01dg648bh452501-25a01sg600ex21sg600r21fg2000dv-90fg2000dv90westcode cross referencesg1000r23sg1000ex23fg1000ahsg700ex22dg406bp18 PDF

    ABB 5SGA

    Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502
    Contextual Info: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s


    OCR Scan
    15f250205d250101r250120h2501+1211f250125h2501abb 5sga2sh25gto abbgto gate drive unit2sh2501tjm 105sga 20h2501abb gtor25015sga 15f2502 PDF

    05D2500

    Abstract: GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV
    Contextual Info: Asymmetrie GTO Thyristors ABB Semiconductors AG I - P atentierter freier Druckkontakt. - Alle G TO s werden unter A usschalt­ G renzw erten getestet. - Ausgezeichnete O ptim ierung zw ischen Durchlass- und Schaltverlusten. - G arantierte R ückw ärts-AvalancheBelastbarkeit.


    OCR Scan
    15f25025d25dq01r250120h2501+1305d250011f250001r25d125h25c1gto abbgto gate drive unitabb gto gate unitabb gto30l250125h250105d2505sdfgto 6.5 kv PDF

    Gate Turn-off Thyristor

    Abstract: SG1000R23 westcode cross reference SG1000EX23 SG600EX21 SG700ex22 SG800EX21 equivalent FG2000DV90 fg2000dv-90da DG406BP18
    Contextual Info: Gate Turn-off Thyristor Cross Reference Gate Turn-off Thyristor Cross Reference DS5549-2.0 September 2003 ABB - DYNEX ITQRM µF Cs µ ABB Part Number Voltage Maximum CSG 1501-25A01 2500 1500 3 Dynex Nearest Equivalent Part Number DG406BP25 CSG 2001-25A01


    Original
    ds5549-21501-25a01dg406bp252001-25a01+15dg646bh252003-45a01dg648bh452501-25a013001-25a01gate turn-off thyristorsg1000r23westcode cross referencesg1000ex23sg600ex21sg700ex22sg800ex21 equivalentfg2000dv90fg2000dv-90dadg406bp18 PDF