25C4 Search Results

Contextual Info: 25C4295M Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

25C38

Abstract: MPY-12H39 MPY-25R38 MPY12H49 MPB2-7H39 MPY25C38 MPB2-5H49 MPY-12H49 MPB2-12H49 4h.38
Contextual Info: CdS»CdSe SILICON SENSORS INC 25C SERIES p h o to c o n d u c tiv e \ 7S Z3K Sb.Kib.s> 10 Lux KQ MIN(M a ) 25t(m w ) MPY-25C38 5 -1 0 1 500 500 MPY-25C49 10- 20. 2 500 500 DC (V) 6.7 • ~- i8.5 unit : mm 10 Lux(KQ) MIN(M Q) 25t (m w ) DC ( V ) MPY-25R38

C4318

Abstract: trf 740 s22b 2SC4318 mur 1250 mur S22B
Contextual Info: I ' J j i l l O M . SEM ICO N D U CTO R T O SH IB A TECHNICAL i l i O K 2SC4318 SILICON NPN EPITAXIAL PLANAR TYPE DATA 25C4318 U n it in nun V H F-U H f BAND LOW NOISE AMPUFIER APPLICATIONS. «*6 MAX. 1.6 M A X . •a4±aos. > Low Noise Figure, High Gain.

Contextual Info: I U M SEMICONDUCTOR TOSHIBA HUM i i U ii 2SC4318 TECHNICAL DATA SILICON NPN EPITAXIAL PLANAR TYPE 25C431» VHF-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in nun I jSMAJC. 4*6 M A X , • Low Noise Figure, High Gain. . N F = l.ld B , |S2Je|2= H d B (f= lG H z )

25c41

Abstract: A 2039 g 2SC4125
Contextual Info: Ordering num ber: EN 2954 2SC4125 No.2954 NPN Triple Diffused Planar Silicon Transistor Very H igh-D efm ition Color Display H orizontal Deflection O utput Applications F eatures • Adoption of MBIT process • On-chip damper diode • High breakdown voltage Vcbo = 1500V

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4524 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2 S C 4 5 2 4 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifiers applications Dimensions in mm

Contextual Info: RFX144V24-S23 and RFX96V24-S23 Modem Designer’s Guide 9. T.30 IMPLEMENTATION 9.1 GENERAL CCITT Recommendation T.30 details procedures for facsimile transmission over the PSTN. This standard describes how to initiate, complete, and end a fax transmission. This section describes methods to set up host software to implement T.30.

2SC4223

Abstract: pa4010
Contextual Info: Ordering number: EN 276 2 2SC4223 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features . High breakdown voltage, high reliability . Fast switching speed tf :0.1us typ . Wide ASO . Adoption of MBIT process . Suitable for sets whose height is restricted

BA41-00727A

Abstract: LE88CLGM 82801 hbm IDTCV179 20D2G q231 samsung lcd tv power supply schematic NH82801HEM NB8M-SE RB1 Wlan Cardbus
Contextual Info: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D TORINO 2 g n l u a s i t m

Q8031

Abstract: ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H
Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED

oz960

Abstract: 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763
Contextual Info: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN TABLE OF CONTENTS B A COVER PAGE BLOCK DIAGRAM, SYSTEM, POWER & PCB INFO

DIODE 22B4

Abstract: BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4
Contextual Info: X10 DRAW Model Name PBA Name PCB Code Dev. Step Revision APPROVAL AQUILA MAIN BA92-01774A BA41-#####A SR 1.0 CHECK : : : : : CPU :P4-BANIAS Chip Set :MCH-M ODEM Remarks :TEMP AQUILA 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams

sil1162

Abstract: Diode 31d8 06 31d8 diode C828 3-pin transistor 2N7002DW 3 PIN hall effect sensor u58 hall effect sensor u58 zener 12a2 powerbook bubba oscillator schematic
Contextual Info: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN PAGE B TITLE PAGE AND CONTENTS SYSTEM BLOCK DIAGRAM POWER BLOCK DIAGRAM

ISL9504

Abstract: foxconn apple ar9350 C4722 l8400 C8450 C7550 D6905 foxconn m33 SOT23-5
Contextual Info: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 MS MS MS PS PS PS PS PS PS PS PS PS

SOT23-5 AE31

Abstract: c9450 ar9350 ZH510 M5621 C4722 FERR-120-OHM-1 6A4 mic DIODE D6905 C8450
Contextual Info: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS

14D360

Abstract: CIS10J270NC CQ509 BSS138_NL LM358DB SAMSUNG HT Q9 BSS138-NL samsung electronics ba41 M/CIS10J270NC C51MV MCP51
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D MONACO C B g n l u a s i t

H8S-2110B

Abstract: HDR-40P-2R-SMD samsung u544 AMD 218S6ECLA21FG SB600 BGA IC monacor sp 202 SI2315BDS-T1 BD2430 RS600ME 36B2 U544-5
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D MONACO-R C B g n l u a s i

RAS 0510 SUN HOLD

Abstract: sun hold RAS 0510 SUN HOLD, RAS 0510 NH82801HBM bd3 c531 diode schematic diagram hdmi to rca le88clpm U519-1 20B3 diode schematic diagram crt tv samsung
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D GENEVA CPU : Chip Set : Remarks :

54B2

Abstract: HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS

J300

Abstract: J400 P300 P4C1024 P4C1024L
Contextual Info: P4C1024 HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM FEATURES High Speed Equal Access and Cycle Times — 15/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) — 20/25/35/45/55/70/85/100/120 ns (Military) Single 5 Volts ±10% Power Supply

20C8

Abstract: 20B3 diode 22B2 DIODE DIODE 22B4 RB342 diode 62b3 22A5 61a3 55A7 20D2
Contextual Info: DS33Z44DK Ethernet Transport Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES Demonstrates Key Functions of DS33Z44 Ethernet Transport Chipset Includes Two Resource Cards: One with DS21458 T1/E1 SCT and one with DS3174 T3/E3 SCT, Transformers, BNC and RJ48

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

IC 37021

Abstract: 2SC4633 37021 EN3702A
Contextual Info: Ordering num ber:EN3702A _ 2SC4633 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications F eatu re s • High breakdown voltage Vceo min = 1200V . •Small Cob (typical Cob = 2.0pF). ■Full-isolation package.

8582c

Abstract: 8092D
Contextual Info: 111 234561111111 1111111111111111111 1111111111 12345167897A8 12345167897A8 F8928E22 ! BCDEF "#1$"% & ' %62% 2(%!*+2F892!",