256KX4 ZIP Search Results

transistor a719

Abstract: a719 EDI44256C DRAM 256kx4
Contextual Info: _ EDI44256C m oi E lectronic D e to n a Ine. High Performance Megabit Monolithic DRAM 256Kx4 Dynamic RAM CMOS, Monolithic P^EOiDIMIjW Features The EDI44256C is a high performance, low power CM O S Dynamic RAM organized as 256Kx4. The use of triple-layer polysilicon process, combined with silicide

Contextual Info: OCT 2 » 1990 EDI44256C Electronic D atign t In c« High Performance Megabit Monolithic DRAM 256Kx4 Dynamic RAM CMOS, Monolithic Features P R Ë U M 1 ÏM Y The EDI44256C is a high performance, low power CMOS Dynamic RAM organized as 256Kx4. The use of triple-layer polysilicon process, combined with silicide

a719

Abstract: EDI44256C DRAM 256kx4
Contextual Info: 23EDI EDI44256C Electronic D e to n a Ine. High Performance Megabit Monolithic DRAM P^EOiDIMIjW 256Kx4 Dynamic RAM CMOS, Monolithic Features The EDI44256C is a high performance, low power CM O S Dynamic RAM organized as 256Kx4. The use of triple-layer polysilicon process, combined with silicide

DRAM 256kx4

Contextual Info: ^E D I C Etectronie D«aigna inc. EDI44256C High Performance Megabit Monolithic DRAM 256Kx4 Dynamic RAM CMOS, Monolithic m U N O D N A m r Features The EDI44256C is a high performance, low power C M O S Dynamic RAM organized a s 256Kx4. The use of triple-layer polysilicon process, combined with silicide

DRAM 256kx4

Abstract: KM44C256CLP-8 KM44C256CLJ
Contextual Info: CMOS DRAM KM44C256CL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256CL is a CMOS high speed 262,144x4 Dynamic Random Access Memory. Its design is optimized for high performance applications

KM44C256CJ-7

Abstract: KM44C256CJ-6 KM44C256CP-6 KM44C256CP-8 KM44C256CZ-7 KM44C256CJ6 KM44C256CJ7 km44c256cj KM44C256CT-7 KM44C256CZ
Contextual Info: / KM44C256C CMOS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256C is a CMOS high speed 262,144x4 Dynamic Random tecess Memory. Its design is optimized for high performance applications such as

km44c256cp

Abstract: KM44C256CJ-7 KM44C256CP-6
Contextual Info: KM44C256C CMOS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256C is a CMOS high speed 262,144x4 Dynamic Random Access Memory. Its design is optimized for high performance applications such as

Contextual Info: KM44C256CL_CM O S DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256CL is a CMOS high speed 262,144x4 Dynamic Random Access Memory. Its design is optimized tor high performance applications

KM44C256

Contextual Info: CMOS DRAM KM44C256CSL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144x4 Dynamic Random Access Memory. Its design is optimized for high performance applications

EDI8F32259C

Contextual Info: White Electronic Designs EDI8F32259C 256Kx32 STATIC RAM CMOS, HIGH SPEED MODULE FEATURES DESCRIPTION „ The EDI8F32259C is a high speed 8Mb Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ

DRAM 256kx4

Contextual Info: CMOS DRAM KM44C256CSL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: CMOS DRAM KM44C256CSL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: 1Mx9/512Kx18/256Kx36, 20 - 45ns, ZIP 30A104-10 A 9 Megabit CMOS SRAM DPS256S36LK PRELIMINARY DESCRIPTION: The DPS256S36LK is a 256K X 36 high-density, low-power static RAM module comprised of eight 128Kx8 and four 256Kx4 monolithic SRAM’s, an advanced high-speed CMOS decoder, resistor network

SM2242

Contextual Info: JUl i f SM224256Z 6Mbit 256KX 24 CMOS Fast SRAM Module General Description Features The SM224256Z is a high performance, 6 megabit static RAM module organized as 256K words by 24 bits, in a 56-pin, ZIP package. The module utilizes six 256Kx4 high speed static RAMs in surface mount package on an

EDI8F32256C25M6C

Contextual Info: ^EDI EDI8F32256C ELECTRONIC DESIGNS INC High Speed Eight Megabit SRAM Module 256Kx32 Static RAM CMOS, High Speed Module The EDI8F32256C is a high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in

KM44C256AP

Abstract: samsung hv capacitor KM44C256A-8 KM44C256A KM44C256A-10 KM44C256A-12 KM44C2 262144x4
Contextual Info: SAMSUNG SEMICONDUCTOR INC E3E D 7=1^145 OOOñlbO 7 • KM44C256A CMOS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC • • • • • • • • • tcAC •rc 150ns KM44C256A- 8 80ns 20ns

km44c256cp-7

Abstract: 256CP-6 KM44C256CJ-7 nl142 256CP-8 AE12A 44C256C anyk
Contextual Info: KM44C256C CMOS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 44C 256C is a C M O S high speed 262,144x4 Dynamic Random Access Memory. Its design is optimized for high performance applications such as

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

Contextual Info: o ACCUTEK AK536512WP -60, -70, -80 524,288 Word by 36 Bit CMOS Dynamic Random Access Memory MICROCIRCUIT IISCRJPTÎON The Accutek AK536512WP high density memory module is a CMOS dynamic RAM organized in 512K x 36 bit words. The module consists of sixteen standard 256Kx4 DRAMs in plastic SOJ

15521

Contextual Info: EDI8F32259C 256Kx32 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION n 256Kx32 bit CMOS Static RAM The EDI8F32259C is a high speed 8Mb Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ packages on an epoxy

Contextual Info: ^EDI EDI8F32256C ELECTRONIC DESIGNS INC. i High Speed Eight Megabit SRAM Module 256Kx32 Static RAM CMOS, High Speed Module Features The EDI8F32256C is a high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in

EDI8F32259V

Abstract: EDI8F32259V12MMC EDI8F32259V12MNC EDI8F32259V15MMC EDI8F32259V15MNC EDI8F32259V20MNC EDI8F32259V25MNC
Contextual Info: EDI8F32259V 256Kx32 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION n 256Kx32 bit CMOS Static RAM The EDI8F32259V is a high speed 8Mb Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ packages on an epoxy

Contextual Info: EDI9F33256C m x 156Kx32 SRAM Module El£CTKONC CCSÍGNS.NC. 256Kx32 Static RAM CMOS, High Speed Module Features The EDI9F33256C is a high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ pack­

EDI8F32256C

Abstract: DQ420
Contextual Info: m a EDI8F32256C ELECTRONIC DESIGNS INC. • High Speed Eight Megabit SRAM Module 256Kx32 Static RAM CMOS, High Speed Module Features The EDI8F32256C is a high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in