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    256F3 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG TC397XE256F300SBBKXUMA1

    TC397XE256F300SBBKXUMA1 - Bulk (Alt: TC397XE256F300SBBKXUMA1)
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    Avnet Americas () TC397XE256F300SBBKXUMA1 Bulk 18
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    TC397XE256F300SBBKXUMA1 Bulk
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    Flip Electronics TC397XE256F300SBBKXUMA1 5
    • 1 $28.99
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    Infineon Technologies AG TC397XA256F300SBDKXUMA1

    - Tape and Reel (Alt: TC397XA256F300SBDKXUMA1)
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    Avnet Americas TC397XA256F300SBDKXUMA1 Tape & Reel 1,000
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    Rochester Electronics TC397XA256F300SBDKXUMA1 1,220 1
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    • 100 $64.60
    • 1000 $57.80
    • 10000 $54.40
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    EBV Elektronik TC397XA256F300SBDKXUMA1 44 Weeks 1,000
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    Infineon Technologies AG TC397XE256F300SBCKXUMA1

    Microcontroller 32-bit 16MB Flash 292-Pin BGA T/R - Boxed Product (Development Kits) (Alt: TC397XE256F300SBCKXUMA1)
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    Avnet Americas TC397XE256F300SBCKXUMA1 Box 1
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    EBV Elektronik TC397XE256F300SBCKXUMA1 13 Weeks 1
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    Infineon Technologies AG TC397XX256F300SBDKXUMA1

    - Tape and Reel (Alt: TC397XX256F300SBDKXUMA1)
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    Avnet Americas TC397XX256F300SBDKXUMA1 Tape & Reel 38 Weeks, 4 Days 1,000
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    EBV Elektronik TC397XX256F300SBDKXUMA1 44 Weeks 1,000
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    Vyrian TC397XX256F300SBDKXUMA1 9,736
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    Infineon Technologies AG TC397XP256F300SBDKXUMA1

    - Tape and Reel (Alt: TC397XP256F300SBDKXUMA1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TC397XP256F300SBDKXUMA1 Tape & Reel 38 Weeks, 4 Days 1,000
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    Rochester Electronics TC397XP256F300SBDKXUMA1 2,641 1
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    • 100 $49.69
    • 1000 $44.46
    • 10000 $41.84
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    EBV Elektronik TC397XP256F300SBDKXUMA1 44 Weeks 1,000
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    Find more 256F3 price and stock on Findchips.com

    256F3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    57C256

    Abstract: 57C256F 57C25 57C256F-70 57c256f-45
    Contextual Info: WS57C256F HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • Fast Access Time • Immune to Latch-UP — *ACC = 35 ns — Up to 200 mA • ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962-86063 — t CE = 35 ns • Low Power Consumption


    OCR Scan     		ws57c256fstan256f-45t256f-55c256f-55d+8256f-55j256f-55p256f-55t57c25657c256f57c2557c256f-7057c256f-45 PDF

    hynix lpddr2

    Abstract: Elpida LPDDR2 Memory elpida lpddr2 ELPIDA mobile dram LPDDR2 lpddr2 spec lpddr2 spec HYNIX LPDDR2 1Gb Memory LPDDR2 SDRAM hynix hynix lpddr2 sdram samsung lpddr2
    Contextual Info: 512Mb LPDDR2-S4 SDRAM NT6TL16M32AQ/ NT6TL32M16AQ Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS,  is transmitted/received with data, to be used in capturing data at the receiver 


    Original     		512mbnt6tl16m32aq/nt6tl32m16aqhynix lpddr2+9elpida lpddr2 memoryelpida lpddr2elpida mobile dram lpddr2lpddr2 speclpddr2 spec hynixlpddr2 1gb memorylpddr2 sdram hynixhynix lpddr2 sdramsamsung lpddr2 PDF

    NT6TL32M

    Contextual Info: 512Mb LPDDR2-S4 SDRAM NT6TL16M32AQ/ NT6TL32M16AQ Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS,  is transmitted/received with data, to be used in capturing data at the receiver 


    Original     		512mbnt6tl16m32aq/nt6tl32m16aqnt6tl32m PDF

    th3160

    Abstract: saa2001 SAA7323 SAA2012GP SAA2002 SAA2012 TDA1315 256f3
    Contextual Info: Philips Semiconductors Product specification Adaptive allocation and scaling for record processing in DCC systems SAA2012 FEATURES • Stereo or 2-channel mono encoding • Status may be read continuously • Microcontroller interface COMPACT CASSETTE • l2S interfaces


    OCR Scan     		saa2012saa2002clk24256fs+8711dfl2b00fl042dth3160saa2001saa7323saa2012gptda1315256f3 PDF

    hynix lpddr2

    Abstract: ELPIDA mobile dram LPDDR2 Elpida LPDDR2 Memory hynix lpddr2 sdram lpddr2 DQ calibration Hynix 4Gb LPDDR2 LPDDR2 SDRAM hynix NT6TL64M32AQ -G1 lpddr2-s2 LPDDR2 1Gb Memory
    Contextual Info: 2Gb LPDDR2-S4 SDRAM NT6TL64M32AQ Feature Options  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS, /DQS is transmitted/received with data, to be used in capturing data at the receiver  Differential clock inputs (CK and /CK)


    Original     		nt6tl64m32aq-64meg64m32-168-ball+10hynix lpddr2elpida mobile dram lpddr2elpida lpddr2 memoryhynix lpddr2 sdramlpddr2 dq calibrationhynix 4gb lpddr2lpddr2 sdram hynixnt6tl64m32aq -g1lpddr2-s2lpddr2 1gb memory PDF

    NT6TL128M32AQ-G1

    Abstract: NT6TL256T32 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 NT6TL128M32 hynix lpddr2 NT6TL128T64AR-G0 NT6TL256 NT6TL128T64AR-G1I NT6TL256T32AQ-G2
    Contextual Info: 4Gb/8Gb LPDDR2-S4 SDRAM NT6TL128M32AI Q /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR(3/5) Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe (DQS, ) is transmitted/received with data, to be used in capturing data at the receiver


    Original     		nt6tl128m32ai/nt6tl256t32aqnt6tl256t32as/nt6tl128t64arnt6tl128m32aq-g1+9nt6tl256t32nt6tl256t32aq-g1nt6tl128m32aq-g0nt6tl128m32hynix lpddr2nt6tl128t64ar-g0nt6tl256nt6tl128t64ar-g1int6tl256t32aq-g2 PDF

    NT6TL256T32AQ

    Abstract: NT6TL128M32AI hynix lpddr2 NT6TL128M32AQ-G1 LPDDR2 1Gb Memory NT6TL128M32 Hynix 4Gb LPDDR2 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 Elpida LPDDR2 Memory
    Contextual Info: 4Gb/8Gb LPDDR2-S4 SDRAM NT6TL128M32AI Q /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR(3/5) Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe (DQS, ) is transmitted/received with data, to be used in capturing data at the receiver


    Original     		nt6tl128m32ai/nt6tl256t32aqnt6tl256t32as/nt6tl128t64arnt6tl256t32aq+8hynix lpddr2nt6tl128m32aq-g1lpddr2 1gb memorynt6tl128m32hynix 4gb lpddr2nt6tl256t32aq-g1nt6tl128m32aq-g0elpida lpddr2 memory PDF