256KB Search Results

10-15V

Abstract: X5563 X5563S8 X5563S8I
Contextual Info: Preliminary Information X5563 CPU Supervisor with 256Kbit SPI EEPROM FEATURES DESCRIPTION • Selectable watchdog time — 0.15s, 0.4s, 0.8s off • Low VCC detection and reset assertion —Four standard reset threshold voltages —Re-program low VCC reset threshold voltage

Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

Contextual Info: TMS470M Transportation Microcontroller Family The TMS470M microcontroller family enables developers to easily create safety-related applications for the transportation industry. TMS470M microcontrollers use the widely adopted ARM Cortex -M3 CPU running at 80MHz. The family offers Flash memory options ranging from 256KB to 640KB

Contextual Info: HB56D25609A/B-85A/10A/12A 262,144-Word x 9-Bit High Density Dynamic RAM Module Pin No. • DESCRIPTION The HB56A25609 is a 256K x 9 dynamic RAM module, mounted two 1-Mbit DRAM HM514256A sealed in SOJ package and 256Kbit DRAM (HM51256) sealed in PLCC package. An outline of the

Contextual Info: 256KB/1MB/4MB IDT79R4000 SECONDARY CACHE MODULE BLOCK FAMILY PRELIMINARY IDT7MP6074 IDT7MP6084 IDT7MP6094 FEATURES: DESCRIPTION: • High-speed B iC E M O S /C E M O S ™ secondary cache module block constructed to support the IDT79R4000 CPU • Available as a pin compatible family to build 256 kilobyte

M27W201

Abstract: AN620 M27C2001 PLCC32 TSOP32 Application Note EPROM Programming
Contextual Info: . . SGS-THOMSON k7 # . M27W201 RfilDÊlMSJlilLIlÊ'inEORODtgS 2 Mbit 256Kb x 8 Low Voltage OTP EPROM • LOW VOLTAGE READ OPERATION: 2.7V to 3.6V ■ FAST ACCESS TIME: - 70ns at Vcc = 3.0V to 3.6V - 80ns at Vcc = 2.7V to 3.6V ■ LOW POWER CONSUMPTION: - Active Current 15mA

WLCSP49

Contextual Info: STM32F401xB STM32F401xC ARM Cortex-M4 32b MCU+FPU, 105 DMIPS, 256KB Flash/64KB RAM, 10 TIMs, 1 ADC, 11 comm. interfaces Datasheet - production data Features • Core: ARM 32-bit Cortex -M4 CPU with FPU, Adaptive real-time accelerator ART Accelerator™ allowing 0-wait state execution

M27V201

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M27V201 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 120ns ■ LOW POWER CONSUMPTION: – Active Current 15mA at 5MHz 32 32 – Standby Current 20µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

M29W400B

Abstract: FBGA48 M29W400 M29W400BB M29W400BT M29W400T
Contextual Info: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W400T and M29W400B are replaced respectively by the M29W400BT and M29W400BB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

FM24C256

Abstract: FM24W256 FM24C256-G
Contextual Info: FM24C256 256Kb FRAM Serial Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

JESD97

Abstract: M29F400 M29F400B M29F400BB M29F400BT
Contextual Info: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Feature summary • Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical

RIC0639

Abstract: FM25256B FM25256B-G FM25W256 FM25V02 -G
Contextual Info: FM25256B 256Kb FRAM Serial 5V Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Virtually Unlimited Endurance 1014 Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

M28R400C

Abstract: M28R400CB M28R400CT
Contextual Info: M28R400CT M28R400CB Known Good Die 4 Mbit 256Kb x16, Boot Block 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Delivery Form – VDD = 1.65V to 2.2V Core Power Supply – VDDQ= 1.65V to 2.2V for Input/Output – VPP = 12V for fast Program (optional)

RG5V02

Abstract: fm25v02
Contextual Info: Pre-Production FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM1808

Abstract: 1kx8 FM1808-120-P FM1808-120-S FM1808-70-P FM1808-70-S
Contextual Info: Preliminary FM1808 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process

M36DR432AD

Abstract: M36DR432BD
Contextual Info: M36DR432AD M36DR432BD 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product FEATURES SUMMARY • Multiple Memory Product Figure 1. Package – 1 bank of 32 Mbit (2Mb x16) Flash Memory – 1 bank of 4 Mbit (256Kb x16) SRAM

DH14

Abstract: DH15 MPC2605 MPC603 MPC604 O 19D "Lookaside Cache"
Contextual Info: MOTOROLA Order this document by MPC2605/D SEMICONDUCTOR TECHNICAL DATA MPC2605 Product Preview Integrated Secondary Cache for PowerPC Microprocessors The MPC2605 is a single chip, 256KB integrated look–aside cache with copy–back capability designed for PowerPC applications MPC603 and

FM1808

Abstract: 7058 FM1808-70-P FM1808-70-S MS-011 MS-013
Contextual Info: FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

88F6192

Abstract: ARMv5TE Sheeva Marvell marvell* soc spdif spi ARMv5 Marvel Marvell SOC 88F6000 Marvell qdeo
Contextual Info: Marvell 88F6192 SoC with Sheeva Technology Kirkwood Series PRODUCT OVERVIEW The Marvell 88F6192 SoC with Sheeva embedded CPU technology, is a high-performance integrated controller for value class applications. It integrates the Marvell Sheeva CPU core which is fully ARMv5TE-compliant with a 256KB L2 Cache. The

88F6282

Abstract: Marvell HDMI marvell ARMv5TE marvell* soc home security system block diagram PCIE NAND Marvell 88F6282 marvell switch marvell ethernet switch prestera
Contextual Info: 300 series Marvell 88F6282 SoC PRODUCT OVERVIEW The Marvell 88F6282 SoC is a high-performance integrated controller. It integrates the Marvell developed CPU core which is fully ARMv5TE-compliant with a 256KB L2 Cache. The 88F6282 builds upon Marvell’s innovative Feroceon®

PCMCIA pinout sram

Abstract: SRA01-04 PCMCIA SRAM Memory Card SRA01-SRA04
Contextual Info: White Electronic Designs SRA01-SRA04 PCMCIA SRAM Memory Card — SRA Series SRAM MEMORY CARD 256KB THROUGH 8MB FEATURES GENERAL DESCRIPTION High Performance SRAM memory Card The WEDC SRAM Series SRA memory cards offer a high performance nonvolatile storage solution for code

GS70328

Abstract: GS70328SJ-10 GS70328SJ-10I GS70328SJ-12 GS70328SJ-15 GS70328SJ-7 GS70328SJ-7I GS70328SJ-8 GS70328SJ-8I 70328
Contextual Info: GS70328SJ/TS 32K x 8 256Kb Asynchronous SRAM SOJ, TSOP Commercial Temp Industrial Temp 7, 8, 10, 12, 15 ns 3.3 V VDD Corner VDD and VSS Features • Fast access time: 7, 8, 10, 12, 15 ns • 75/65/50/50/50 mA at max cycle rate • Single 3.3 V ± 0.3 V power supply

Contextual Info: FM1808 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process

Contextual Info: Pre-Production FM25L256 256Kb FRAM Serial 3V Memory – Extended Temp. Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process