256KX32SR Search Results

Contextual Info: MAR 2 6 1993 256KX32SR AM m o ì a i MS32256FKX-020/025/35/45 c Issue 1.1: February 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r - Inc. Pin Definition 262,144 X 32 CMOS High Speed Static RAM

Contextual Info: a WS256K32-XXX WHITE MICROELECTRONICS 256Kx32SRAM MODULE P R E L IM IN A R Y * FEATURES • Access Times 20, 25, 35ns 2 V D a ta Retention devices available ■ MIL-STD-883 Compliant Devices Available Commercial, Industrial and M ilitary Temperature Range

MN128

Abstract: jedec 46c
Contextual Info: W EDI8F32259C D l electronic designs inc» 256KX32SRAM Module 256Kx32Static RAM CMOS, H itfi Speed Module Features 256Kx32 bit CMOS Static The EDI8F32259C is a high speed 8 megabit Static RAM Random Access M emory module organized as 256K words by 32 bits. This module is

Contextual Info: a WPS256K32-XPJX WHITE /MICROELECTRONICS 256Kx32SRAM MODULE ADVANCE * FEATURES • Access Tim es ■ Commercial and Industrial Tem perature Ranges BiCMOS: 12, 15ns ■ TTLC o m p atib le Inputs and CM OS Outputs CMOS: 1 7 ,2 0 ,2 5 n s ■ I/O Com patible w ith 3.3V Devices

Contextual Info: a WS256K32-XXX WHITE /MICROELECTRONICS 256Kx32SRAM MODULE PRELIMINARY* FEATURES • A ccess Tim es 20, 25, 35ns ■ 2V D ata R etention devices a va ila b le ■ M IL-S TD -883 C om pliant Devices A v a ila b le ■ C om m ercial, Ind ustria l and M ilita r y Tem pe ratu re Range

Contextual Info: a WPS256K32-XPJX WHITE /MICROELECTRONICS 256Kx32SRAM MODULE ADVANCED* FEATURES • ■ A ccess Tim es ■ C om m ercial and Ind ustria l Tem pe ratu re Ranges BiCMOS: 1 2 , 15ns ■ T T L C o m p a tib le Inputs and CMOS O utputs CMOS: 17, 20, 25ns ■ I/O C o m p atible w ith 3.3V Devices

Contextual Info: m x EDI8LM32257C-RP 256Kx32SRAM Ruggedized Plastic ELECTRONIC DESIGNS INC ADVANCED 256Kx32 CMOS High Speed Static RAM Features The EDI8LM32257C is a high-speed 8-Megabit static RAM device with access times of 15 and 20ns over the Comm er­ 256Kx32 bit CMOS Static

19n20

Contextual Info: WHITE /MICROELECTRONICS a 256Kx32SRAM MODULE WPS256K32-XXC A D V A N C E }* FEATURES Comm ercial Tem perature Range • Access Times BiCMOS: 10ns CMOS: 1 2 ,1 5 ,2 0 n s T T LC om patible Inputs and O utputs 5 V o lt Power Supply ■ Packaging Ld • M odule is m anufactured w ith eight 256Kx4 SRAM m emory

Contextual Info: a WPS256K32B-XPJX WHITE /MICROELECTRONICS 256Kx32SRAM MODULE PRELIMINARY* FEATURES • A ccess Tim es of 1 2 , 15ns ■ ■ 68 Lead, P lastic PLCC, 25.15m m 0.990 inch square ■ I/O C o m p atible w ith 3.3V Devices ■ O rganized as 256Kx32, User C o nfig ura ble as 512Kx16

TME 57

Abstract: EDI8L32256C
Contextual Info: ^EDI. EDI8L32256C • 256Kx32 SRAM Module ELECTRONIC DtStGNS, N C PRELIMINARY 256Kx32 CMOS High Speed Static RAM Features The EDI8L32256C is a high speed, high performance, four megabit density Static RAM organized as a 256Kx32 bit 256Kx32 bit CMOS Static

Contextual Info: KH ED/8L322S6V 25SKx32 SRAM ELECTRONIC DESIGNS NC. 256KX32,13V, StaticRAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12,15, 256Kx32 bit C M O S Static 17 and 20ns, allowing the creation of a no wait state DSP

Contextual Info: ^EDI EDI8L32256C 256KX32 SRAM Module ELECTRONIC DESIGNS, INC 256Kx32,5V Static Ram ¡Features The EDI8L32256C is a high speed, 5V, 8 megabit SRAM. 256Kx32 bit CMOS Static The device is available with access times of 15,17, 20and 25ns, allowing the creation of a no wait state DSP memory

Contextual Info: ^EDI ED I8L32256V 256Kx32 SRAM ELECTRONIC DESIGNS, INC 256Kx32,3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit 256Kx32 bit CMOS Static SRAM. The device is available with access times of 12,15, DSP Memory Solution 17 and 20ns, allowing the creation of a no w ait state DSP