25271 Search Results

Contextual Info: WPS-252717-82 2.5 – 2.7 GHz Linear Power Amplifier Preliminary Data Sheet June 2006 Features: • 13 dB Typical Gain • 28.5 dBm Typical P1dB • EVM = 2.5% at 22 dBm Pout • Flange Package Prematch • Surface Mount Hermetic Package WPS-252717-82 Description:

mps 0940

Abstract: WPS-252717-82 WPS-495917-02
Contextual Info: Linear Amplifier Solutions Typical RF Performance Freq WPS-252717-82 WPS-252724-02 WPS-252724-99 MPS-343717-82 MPS-343617-82 MPS-363817-82 WPS-343722-02 WPS-343724-99 WPS-343724-02 WPS-495917-02 WPS-495922-02 MWT-1789HL MWT-1789LN* Ghz (dB) Ga P-1dB (dBm)

Contextual Info: WPS-252717-82 2.5 – 2.7 GHz Linear Power Amplifier Preliminary Data Sheet June 2006 Features: • 13 dB Typical Gain • 28.5 dBm Typical P1dB • EVM = 2.5% at 22 dBm Pout • Flange Package Prematch • Surface Mount Hermetic Package WPS-252717-82 Description:

microSMD200F

Contextual Info: PolySwitch PTC Devices 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 www.circuitprotection.com PRODUCT: microSMD200F Overcurrent Protection Device DOCUMENT: SCD 25271 REV LETTER: F REV DATE: MARCH 6, 2009 PAGE NO.: 1 OF 1 Raychem Circuit Protection Products

IR3541

Abstract: intel VR12 tray qfn 6x6 CHL8510 programmable digital pwm I2C multiphase pwm323
Contextual Info: Digital Multi-Phase Buck Controller FEATURES DESCRIPTION • 5-phase dual output PWM Controller  Phases are flexibly assigned between Loops 1 & 2  Intel VR12, AMD® 400kHz & 3.4MHz SVI and Memory modes  Dual OCP support for I-spike enhanced AMD CPUs

IRUH3301

Abstract: IRUH330133BK iruh3301 shdn IRUH330133 5962F1023505K
Contextual Info: PD-97593B 5962F1023505K IRUH330133BK Radiation Hardended Ultra Low Dropout IRUH330133BP Fixed Positive Linear Regulator +5.0VIN to +3.3VOUT @3.0A Product Summary Part Number IRUH330133BK IRUH330133BP Dropout IO VIN VOUT 0.4V 3.0A 5.0V 3.3V MO-078AA Features

IR3563A

Abstract: VR12 tray qfn 6x6 IR3563 intel VR12 IR3563AM VR12 INTEL PWM charge controller circuit Diagram
Contextual Info: IR3563A Single Output Digital Multi-Phase Controller FEATURES DESCRIPTION • 8-phase single output PWM Controller  Intel VR12 and VR12.5 modes & Memory VR mode  Overclocking & Gaming Mode  PVI and SVI GPU VR modes  Switching frequency from 200kHz to 2MHz per

SL3107

Abstract: AUFS3107 AUIRFSL3107 1380A
Contextual Info: PD - 96394A AUTOMOTIVE GRADE AUIRFS3107 AUIRFSL3107 Features l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

IRFB4510

Abstract: IRFB4510G 0.192mH IRFB4310GPBF IRFB4510GPBF IRFB4310
Contextual Info: PD - 97774 IRFB4510GPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID (Silicon Limited)

AUIRLSL4030

Abstract: AULS4030 3LD2 gs 069 marking h3a 4.5v to 100v input regulator
Contextual Info: PD - 96406B AUTOMOTIVE GRADE AUIRLS4030 AUIRLSL4030 Features l l l l l l l l Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

D47F

Abstract: IRFH8311 PQFN footprint d020d
Contextual Info: PD - 97735C IRFH8311PbF VDS Vgs max RDS on max 30 V ± 20 V 2.1 (@VGS = 10V) (@VGS = 4.5V) 3.2 Qg typ. 30 ID 50 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET m nC i PQFN 5X6 mm A Applications •Synchronous MOSFET for high frequency buck converters

IRF3205 application

Abstract: irf3205 DRIVER Mosfet IRF3205 IRF3205 IR
Contextual Info: AUTOMOTIVE GRADE PD - 97764 AUIRFI3205 Features ● ● ● ● ● ● ● ● ● HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Distance = 4.8mm 175°C Operating Temperature

AUIR3317

Abstract: MAX3726 IR3317 D2Pak-5 AEC-Q100-003
Contextual Info: August, 25th 2011 Automotive grade AUIR3317 S LOW EMI CURRENT SENSE HIGH SIDE SWITCH Features •        Product Summary Rds(on) 7 m max. Vcc op. 6 to 26V Current Ratio 8800 Over-current 120A Vclamp 40V Load current feedback Over current shutdown

Contextual Info: IRFH8316PbF HEXFET Power MOSFET VDS 30 ± 20 Vgs max RDS on max V V 2.95 (@VGS = 10V) (@VGS = 4.5V) 4.30 Qg typ 30.0 ID 50 (@Tc(Bottom) = 25°C) m nC i PQFN 5X6 mm A Applications •Synchronous MOSFET for high frequency buck converters Features and Benefits

AUIRLS4030-7P

Abstract: 4.5v to 100v input regulator
Contextual Info: PD - 96399A AUTOMOTIVE GRADE AUIRLS4030-7P HEXFET Power MOSFET Features l l l l l l l l D Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

IRF7946TR1PBF

Abstract: IRF7946TRPBF 6852 0.53
Contextual Info: PD - 97780 StrongIRFET™ IRF7946PbF Applications l l l l l l l l l DirectFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies

auirf7484q

Abstract: F7484Q AUIRF
Contextual Info: PD - 97757 AUTOMOTIVE GRADE AUIRF7484Q Features l Advanced Planar Technology l Low On-Resistance l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified*

IRGPS4067

Abstract: irgps4067d CI 4000 J500 IRGPS IRGPS4067DPBF
Contextual Info: PD - 97736 IRGPS4067DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features •         Low VCE on Trench IGBT Technology Low Switching Losses 5 s SCSOA Square RBSOA 100% of The Parts Tested for ILM 

2n7612

Abstract: 4.5V to 100v input regulator
Contextual Info: PRELIMINARY PD-97178 2N7612M1 IRHLG77110 100V, Quad N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE MO-036AB TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHLG77110 100K Rads (Si) 0.22Ω IRHLG73110 300K Rads (Si) 0.22Ω

IRFP250

Contextual Info: PD-20380B HFA45HI60C Ultrafast, Soft Recovery Diode FRED Features • • • • • • Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets VR = 600V VF = 1.7V Qrr = 375nC

PVD10

Abstract: PVD1052 PVD1054 PVD13N
Contextual Info: Replaced by PVD13N Data Sheet No. PD10023E Series PVD10 Microelectronic Power IC BOSFET Photovoltaic Relay Single-Pole, 160mA, 0-100V DC General Description The Photovoltaic DC Relay PVD is a single-pole, normally open solid state replacement for electromechanical relays used for general purpose switching of analog signals. It utilizes as an output switch a

C-123

Abstract: MBR3035CT MBR3035CT-1 MBR3045CT MBR3045CT-1 MBRB3035CT MBRB3045CT SMD-220 mbr30 st
Contextual Info: Bulletin PD-20716 rev. B 01/03 MBR30.CT MBRB30.CT MBR30.CT-1 SCHOTTKY RECTIFIER 30 Amp Description/ Features Major Ratings and Characteristics Characteristics IF AV Rectangular waveform Values Units 30 A 30 A This center tap Schottky rectifier has been optimized for low

capacitor 47nf

Abstract: cfl ballast crest factor bridge rectifier 1A IR2520D irf ballast cfl ballast 14w cfl circuit transistor Electronic ballast 10uF 450v 1uF 400V capacitor 10 ELECTRONIC
Contextual Info: Application Note AN-1073 Analysis of Different Solutions and Trade-off Cost vs. Power Factor Performance for Electronic Ballasts By Cecilia Contenti Table of Contents Page I. Introduction II. Low Power Factor

calculating rectifier circuits MTBF

Abstract: bimetal transformer mtbf MIL-HDBK-217F CAPACITOR chip mtbf 217F MIL-HDBK-217E ART2815T AN-1078 MIL-HDBK217F
Contextual Info: Application Note AN-1078 An Examination of Changes Imposed by Revised Hybrid Models When Calculating MTBF Values using MIL-HDBK 217F, Notice 1 & 2 By Richard Miller, Director Space Products Table of Contents Page Resistors .1