252 DIODE Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Diodes MBRD6100CT Schottky barrier rectifier TO-252 FEATURES z Extremely fast switching z Extremely low forward drop 1 2 4 3 MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L MJD127 Plastic-Encapsulate Transistors TO-252-2L TRANSISTOR PNP FEATURES 1. BASE High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C 2. COLLECTOR 3. EMITTER

TRANSISTOR tip122

Abstract: MJD122 TIP122 TO252-2
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2 Plastic-Encapsulate Transistors MJD122 TO-251 TO-252-2 TRANSISTOR NPN FEATURES 1. BASE • · · High DC current gain Electrically similar to popular TIP122 Built-in a damper diode at E-C

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 MJD122 Plastic-Encapsulate Transistors TRANSISTOR（NPN） TO-252 FEATURES 1.BASE ∙ High DC Current Gain ∙ Electrically Similar to Popular TIP122 ∙ Built-in a Damper Diode at E-C 2.COLLECTOR 3.EMITTER

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors MJD122 TRANSISTOR（NPN） TO-252-2L FEATURES 1.BASE ∙ High DC Current Gain ∙ Electrically Similar to Popular TIP122 ∙ Built-in a Damper Diode at E-C 2.COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2Plastic-Encapsulate Transistors TO-251 TO-252-2 MJD127 TRANSISTOR NPN FEATURES • · · 1. BASE High DC current gain Electrically similar to popular TIP127 Built-in a damper diode at E-C 2. COLLECTOR

Contextual Info: GU General Use Type [2-Channel (Form A) Type] FEATURES 6.4 .252 3.9±0.2 .154±.008 9.78 .385 6.4 .252 3.6±0.2 .142±.008 9.78 .385 mm inch 1 8 2 7 3 6 4 5 1. Compact 8-pin DIP size The device comes in a compact (W) 6.4 x (L) 9.78 ×(H) 3.9 mm (W) .252×(L)

Contextual Info: GU General Use Type [2-Channel (Form A) Type] FEATURES 6.4 .252 3.9±0.2 .154±.008 9.78 .385 6.4 .252 3.6±0.2 .142±.008 9.78 .385 mm inch 1 8 2 7 3 6 4 5 1. Compact 8-pin DIP size The device comes in a compact (W) 6.4 x (L) 9.78 ×(H) 3.9 mm (W) .252×(L)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors MJD122 TO-251 TO-252-2L TRANSISTOR（NPN） FEATURES 1.BASE ∙ High DC current gain ∙ Electrically similar to popular TIP122 ∙ Built-in a damper diode at E-C

mjd127

Abstract: TIP127
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2Plastic-Encapsulate Transistors TO-251 TO-252-2 MJD127 TRANSISTOR PNP FEATURES • · · 1. BASE High DC current gain Electrically similar to popular TIP127 Built-in a damper diode at E-C 2. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 MJD127 Plastic-Encapsulate Transistors TO-252 TRANSISTOR PNP FEATURES 1. BASE High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate MOSFETS CJU01N60 N-Channel Power MOSFET TO-252 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading

100C

Contextual Info: SSD01L60 1A, 600V,RDS ON 12Ω N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente Description TO-252 The SSD01L60 (TO-252) is universally preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. Features

st morocco tip122

Abstract: Darlington pair IC schematic morocco tip122 MJD122 MJD122-1 MJD122T4 MJD127 MJD127-1 MJD127T4 TIP122
Contextual Info: MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS Ordering Code MJD122T4 MJD122-1 MJD127T4 MJD127-1 Marking MJD122 MJD122 MJD127 MJD127 Package TO-252 TO-251 TO-252 TO-251 DPAK (IPAK) (DPAK) (IPAK) Shipment Tape & Reel Tube

100C

Abstract: mosfet 600V 16A RD-187
Contextual Info: SSD01N60 1.6A, 600V,RDS ON 8Ω N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product Description TO-252 The SSD01N60 provide the designer with the best combination of fast switching. The TO-252 is universally preferred for all commercial-industrial

8085 transistor

Contextual Info: HS PhotoMOS AQV234 HS PhotoMOS (AQV234) Highest sensitivity LED operate current: typical 0.31A 6.4 .252 8.8 .346 3.9 .154 6.4 .252 8.8 .346 3.6 .142 mm inch 1 6 2 5 3 4 RoHS Directive compatibility information http://www.mew.co.jp/ac/e/environment/ FEATURES

photomos AQV212 smd

Abstract: photomos AQV212 AQV217 AQV210 AQV212 AQV212A AQV214 AQV214H AQV215 AQV215A
Contextual Info: GU PhotoMOS AQV21P, AQV214H (Standard type) VDE TESTING (Reinforced type) GU PhotoMOS (AQV21P, AQV214H) Controls low-level input signals. Controls load voltage 60V to 600V. FEATURES 6.4 .252 8.8 .346 3.9 .154 6.4 .252 8.8 .346 3.6 .142 mm inch 1 6 2 5 3

Contextual Info: GU-E PhotoMOS AQV210E, AQV21❍EH (Standard type) General use and economy type. DIP (1 Form A) 6-pin type. Reinforced insulation 5,000V type. VDE TESTING (Reinforced type) GU-E PhotoMOS (AQV210E, AQV21❍EH) FEATURES 6.4 .252 8.8 .346 3.9 .154 6.4 .252 8.8

Contextual Info: GU-E PhotoMOS AQV210E, AQV21❍EH (Standard type) General use and economy type. DIP (1 Form A) 6-pin type. Reinforced insulation 5,000V type. VDE TESTING (Reinforced type) GU-E PhotoMOS (AQV210E, AQV21❍EH) FEATURES 6.4 .252 8.8 .346 3.9 .154 6.4 .252 8.8

SIT Static Induction Transistor

Abstract: schematic diagram induction heater mosfet induction heater schematic diagram induction heating diagram induction heater Bipolar Static Induction Transistor low frequency induction heater AC/DC Electronic Load induction heater induction heating control circuit diagram
Contextual Info: AQV234 PhotoMOS RELAYS HS High Sensitivity Type 1-Channel (Form A) Type UL File No.: E43149 CSA File No.: LR26550 FEATURES 6.4±0.05 .252±.002 8.8±0.05 .346±.002 3.9±0.2 .154±.008 6.4±0.05 .252±.002 8.8±0.05 .346±.002 3.6±0.2 .142±.008 mm inch

AQV210E

Abstract: AQV210EA AQV210EAX AQV210EAZ AQV210EH AQV210EHA AQV214E AQV214EA AQV214EAX AQV214EH
Contextual Info: Standard type GU (General Use)-E Type [1-Channel (Form A) Type] VDE TESTING (Reinforced type) PhotoMOS RELAYS FEATURES 6.4±0.05 .252±.002 8.8±0.05 .346±.002 3.9±0.2 .154±.008 6.4±0.05 .252±.002 3.6±0.2 .142±.008 8.8±0.05 .346±.002 mm inch 1 6

Contextual Info: SSD484 25A, 30V,RDS ON 15mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product Description TO-252 The SSD484 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TO-252 package is universally preferred for all commercial-industrial

SSD408

Abstract: mosfet 30V 18A TO 252
Contextual Info: SSD408 18A, 30V,RDS ON 18mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product Description TO-252 The SSD408 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TO-252 package is universally preferred for all commercial-industrial

SIT Static Induction Transistor

Abstract: schematic diagram induction heater pulse transformer 4503 6 pin AQV10 AQV20 AQV21 AQV234 AQV234A AQV234AX AQV234AZ
Contextual Info: AQV234 PhotoMOS RELAYS HS High Sensitivity Type 1-Channel (Form A) Type UL File No.: E43149 CSA File No.: LR26550 FEATURES 6.4±0.05 .252±.002 8.8±0.05 .346±.002 3.9±0.2 .154±.008 6.4±0.05 .252±.002 8.8±0.05 .346±.002 3.6±0.2 .142±.008 mm inch