GB05SLT12 Search Results

Contextual Info: GB05SLT12-252 Silicon Carbide Power Schottky Diode VRRM IF Tc = 25°C IF (Tc ≤ 150°C) QC Features Package •        RoHS Compliant Industry’s leading low leakage currents 175 °C maximum operating temperature Temperature independent switching behavior

Contextual Info: GB05SLT12-220 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB05SLT12-220. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 04-SEP-2013 $ * * GeneSiC Semiconductor Inc.

Contextual Info: GB05SLT12-252 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •        RoHS Compliant 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability

Contextual Info: GB05SLT12-220 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •        RoHS Compliant 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability

Contextual Info: GB05SLT12-220 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •        RoHS Compliant 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability

Contextual Info: GB05SLT12-252 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •        RoHS Compliant 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability

Contextual Info: GB05SLT12-220 Silicon Carbide Power Schottky Diode VRRM IF Tc = 25°C IF (Tc ≤ 150°C) QC Features Package •        RoHS Compliant Industry’s leading low leakage currents 175 °C maximum operating temperature Temperature independent switching behavior

Contextual Info: GB05SLT12-252 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB05SLT12-252. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 04-SEP-2013 $ * * GeneSiC Semiconductor Inc.

Contextual Info: Application Note AN-10A: Driving SiC Junction Transistors SJT with Off-the-Shelf Silicon IGBT Gate Drivers: Single-Level Drive Concept Introduction GeneSiC Semiconductor is commercializing 1200 V and 1700 V SiC Junction Transistors (SJT) with current ratings ranging from 4 A to 16 A. SiC

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

Contextual Info: GA06JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA03JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

ACPL-322J

Abstract: MIC4452YN
Contextual Info: GA04JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA06JT12-247 Normally – OFF Silicon Carbide Junction Transistor -VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

IXDD614

Contextual Info: GA03JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch