250USEC Search Results

arco trimmer

Contextual Info: ARF521 165V, 150W, 150MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz. • High Voltage Breakdown and Large SOA • Specified 125 Volt, 81MHz Characteristics:

Contextual Info: Datasheet AC/DC Drivers Power Factor Correction and Quasi-Resonant DC/DC converter IC BM1C001F „ PFC Output level setting function „ PFC ON/OFF level setting „ QR low power when load is light Burst operation and frequency decrease function „ QR maximum frequency control (120kHz)

ARF461AG

Abstract: ARF461A ARF461B VK200-4B 40.68mhz 40.68MHz power amplifier
Contextual Info: ARF461A G ARF461B(G) TO -24 7 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been

ATC 100E

Abstract: 700B ARF1505 amplifier 9v a 500v power transistor 1802 2x4700pF AMPLIFIER 1500w
Contextual Info: S D ARF1505 S ARF1505 BeO 1525-xx RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE S G S 300V 750W 40MHz The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.

SMCTTA32N14A10

Abstract: TA32N14A10
Contextual Info: SMCT TA20N20A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Preliminary Data Sheet Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid.

Contextual Info: TPS658600 www.ti.com SLVSA37 – DECEMBER 2009 Advanced Power Management Unit Check for Samples: TPS658600 1 INTRODUCTION 1.1 MAIN FEATURES 1 • BATTERY CHARGER – Complete Charge Management Solution for a Single Cell Li-Ion/Li-Pol Cell With Dynamic Power Management and Thermal Foldback.

TPS6586X

Contextual Info: TPS658600 www.ti.com SLVSA37 – DECEMBER 2009 Advanced Power Management Unit Check for Samples: TPS658600 1 INTRODUCTION 1.1 MAIN FEATURES 1 • BATTERY CHARGER – Complete Charge Management Solution for a Single Cell Li-Ion/Li-Pol Cell With Dynamic Power Management and Thermal Foldback.

FREDFET

Contextual Info: APT4F120S 1200V, 4A, 4.2Ω Max Trr ≤195nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

S03-400

Abstract: BMS-R 0X0043 TLK110PT s0340
Contextual Info: TLK110 SLLS901 – DECEMBER 2011 www.ti.com Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver Check for Samples: TLK110 1 Introduction 1.1 Features 1 • Low Power Consumption: <205mW PHY and 275mW with Center Tap Typical • Cable Diagnostics

PAS-65112A

Abstract: 250SEC
Contextual Info: ADSL POTS SPLITTER MODEL NO. : PAS-65112A FEATURES: 1. PASS FCC PART 68 TEST 2. PASS JATE TEST 3. PASS CHUNG HWA MD6111-1 TEST ELECTRICAL SPECIFICATION : 1.IMPEDANCE : 600 OHMS. 2.INSERTION LOSS : 1.0 dB MAX @ 1 KHZ 3.INSERTION LOSS DISTORTION: ±1.0 dB @ 200 HZ ~ 4KHZ.

Contextual Info: APT50SM120B_S APT50SM120B APT50SM120S 1200V, 50A, 50mΩ Silicon Carbide Power MOSFET TO -24 7 D 3 PAK TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI/RFI • PFC and other boost converter • Low Switching Energy • Buck converter • Low RDS on Temperature Coefficient For

Contextual Info: APT40SM120B_S APT40SM120B APT40SM120S 1200V, 40A, 80mΩ Silicon Carbide Power MOSFET TO -24 7 D 3 PAK TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI/RFI • PFC and other boost converter • Low Switching Energy • Buck converter • Low RDS on Temperature Coefficient For

pn sequence generator

Abstract: L9002DX wireless encrypt
Contextual Info: DATA Components Inc SHEET SATURN L9002DX Code Division Spread Spectrum Data Communication Chip • Low Cost Single Chip Baseband Data Communication Solution • Advanced CD/SS digital signal processing architecture • FCC part-15 compliant for unlicensed

Contextual Info: Application Selection Guide 1 Type Designation [IC Type Code] Description Supply Voltage KKC Product characteristics Perfermence KSM- AD series Free SPEC TYPE Low Cost Type) KSM- ND series Free SPEC TYPE ( Low Cost Type) KSM- M series High Noise Immunity ( = KSM-

A1013S

Contextual Info: APT31M100B2 APT31M100L 1000V, 32A, 0.38Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: APT18M80B APT18M80S 800V, 19A, 0.53Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

LD00CM

Abstract: LD02CM ld22cm
Contextual Info: DC Solid State Relay Series KD/LD SHORT CIRCUIT PROTECTED OPTICALLY ISOLATED, 10A, 60 VDC Part Number Relay Description KD00CK 5 A Solid State Relay SSR KD02CK 5 A SSR with Switch Status KD20CK 5 A SSR with Short Circuit Protection KD22CK 5 A SSR with Short Circuit Protection

Contextual Info: APT66M60B2 APT66M60L 600V, 70A, 0.09Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

R2AA04005F

Abstract: PA035C P30B06040 P50B0400 p50b07040 RS1A03 Q2AA10150
Contextual Info: M0007902B TYPE S RS485 GA1060 Serial Interface For Rotary Motor Instruction Manual EN GL I SH No Text on This Page. Preface ÌShipping the product This product in this instruction manual corresponds with the shipping regulations given in the Export Trade Control Ordinance Table 1, item 16 . When these products are exported by

Contextual Info: APT34M120J 1200V, 35A, 0.29Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: APT38M50J 500V, 38A, 0.10Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: APT43F60B2 APT43F60L 600V, 45A, 0.15Ω Max, trr ≤270ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: APT30F50B APT30F50S 500V, 30A, 0.19Ω Max, trr ≤230ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: APT39M60J 600V, 42A, 0.11Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure