250PIA Search Results

Contextual Info: EPSON P F658-05 E0C621C 4-bit Single Chip Microcomputer • • • • Core CPU Architecture R/F Converter Remote-control Carrier Output LCD Driver I DESCRIPTION The E0C621C is a single-chip microcomputer made up of the 4-bit core CPU E0C6200A, ROM, RAM, remote

Contextual Info: QFET P-CHANNEL FQAF22P10 FEATURES • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ. • Extended Safe Operating Area

60P06E

Abstract: 6b69e RS111
Contextual Info: RFG60P06E m HARRIS S E M I C O N D U C T O R 60A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancem ent-M ode Power MOSFET J a n u a ry 199 6 Features Package JEDEC STYLE TO-247 • 6 0 A ,6 0 V SOURCE • * *D S O N = 0 . 0 3 0 1 2 • T e m p e ra tu re C o m p e n s a tin g P S P IC E M o d e l

FI840

Contextual Info: PD -9 .1344A International I R Rectifier IRLIZ24N PRELIMINARY HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS I; Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated

Contextual Info: QFET P-CHANNEL FQA22P10 FEATURES BVDSS = • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ. • Extended Safe Operating Area

IXTM4N45

Abstract: P-CHANNEL 45A TO-247 POWER MOSFET IXTM4N50 Mosfet K 135 To3
Contextual Info: I X Y S CORP iflE D • 4böbESb OOOGblS 2 ■ \ IXTP4N45, IXTP4N50, IXTM4N45, IXTM4N50 □ IX Y S 4 AMPS, 450-500 V, 1.5Q/2.0S2 MAXIMUM RATINGS Parameter IXTP4N45 IXTM4N45 Sym. IXTP4N50 IXTM4N50 Unit Drain-Source Voltage 1 V 0ss 450 500 vrt„ Drain-Gate Voltage (Re s=1.0 MQ) (1)

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7 S b 4 1 4 B DQlSlMt. ÒSI ■ SM6K N-CHANNEL IRF510/511 /512/513 POWER MOSFETS FEATURES • Lower R d s <on > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

ADS902

Contextual Info: B U R R -B R O W N E ADS902 1 10-Bit, 30MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • LOW POWER: 130mW The ADS902 is a high speed pipelined analog-todigital converter that is specified to operate from a single +5V supply. This converter includes a wide

Contextual Info: QFET P-CHANNEL FQB22P10, FQI22P10 FEATURES BVDSS = • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ.

76139s

Abstract: MOSFET 76139s Li ION spice model charge 76139p DC Relay 50A
Contextual Info: HUF76139P3, HUF76139S3, HUF76139S3S S em iconductor 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs May 1998 Features >w • Logic Level Gate Drive • 7 5 A ,3 0 V • Ultra Low On-Resistance, cds ON = 0.0075ii • Temperature Com pensating PSPICE Model

Contextual Info: A p p l i c a t io n N o t e AVAILABLE iconr. - i s AN56 U K X20C16 16K 2K x 8 Bit High Speed AUTOSTORE NOVRAM FEATURES DESCRIPTION * Fast Access Time: 35ns, 45ns, 55ns * High Reliability — Endurance: 1,000,000 Nonvolatile Store Operations — Retention: 100 Years Minimum

Contextual Info: QFET P-CHANNEL FQB6P25, FQI6P25 FEATURES BV d s s = -2 5 0 V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 21 nC Typ.

50mF

Contextual Info: y k iy j x iy k i Ugh-Frequency Waveform Generator F e a tu re s The MAX038 is a high-frequency, precision function generator producing accurate, high-frequency triangle, sawtooth, sine, square, and pulse waveforms with a minimum of external components. The output frequency

4N50

Abstract: POWER MOSFET 4n45 IXTP4N45 4N45 IXTM4N45 IXTM4N50 IXTP4N50
Contextual Info: I X Y S CORP iflE D • 4böbESb OOOGblS 2 ■ \ IX T P 4 N 4 5 , IX T P 4 N 5 0 , IX T M 4 N 4 5 , IX T M 4 N 5 0 4 A M P S , 450-500 V, 1.5Q/2.0S2 □ IX Y S MAXIMUM RATINGS Parameter Sym. IXTP4N45 IXTM4N45 IXTP4N50 IXTM4N50 Unit Drain-Source Voltage 1