250JL Search Results

ram 6505

Contextual Info: H S lS L S li A R R IS HM-6505 SEM ICO N D U CTO R P R O D U C T S DIVISION A DIVISION OF H A RRIS CORPORATION 4096 x 1 CMOS RAM Advance Information Pinout Features 250JL W M A X . TO P V IE W • LO W POWER S T A N D B Y • LO W POWER O P E R A T IO N •

Contextual Info: r r i ri0 \B TECHNOLOGY LT1246/LT1247 1MHz Off-Line Current M ode PWM and DC/DC Converter f€OTUR€S D C S C R IP T IO n • Current Mode Operation to 1MHz ■ 30ns Current Sense Delay ■ < 250jli.A Low Start-Up Current ■ Current Sense Leading Edge Blanking

HM-6505

Abstract: HM-6505-5 HMB505B
Contextual Info: H S L S L S l! A R R IS H M -6 5 0 5 SE M IC O N D U C T O R P R O D UCT S DIVISION A DIVISION OF MARAIS CORPORATION 4096 X 1 C M O S R A M Advance Information Pinout Features TOP V IE W • LO W POWER S T A N D B Y 250JLIW M A X . • LO W POWER O P E R A T IO N

Contextual Info: SFW/I9Z24 Advanced Power MOSFET FEATURES BV DSS = -60 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 1 0 n A M a x . @ V DS = -60V

Contextual Info: SFP9520 Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = ^ D S o n - In = -1 0 0 V 0 -6 & -6 A ■ 175°C Opereting Temperature TO-220 ■ Extended Safe Operating Area

Contextual Info: SFR/U9214 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge -2 5 0 V ^D S o n - 4 .0 In = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = -250V

Contextual Info: SFP9510 Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = ^ D S o n In = -1 0 0 V 1 -2 Q -3 .6 A ■ 175°C Opereting Temperature TO-220 ■ Extended Safe Operating Area

Contextual Info: B V DSS • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = o ■ cn CO Avalanche Rugged Technology II ■ - o CD I FEATURES V o cn SFS9Z14 Advanced Power MOSFET Q. A ■ 175°C Operating Temperature ■ Extended Safe Operating Area

Contextual Info: S F W /I9 52 0 Advanced Power MOSFET FEATURES BV DSS = -100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology R DS on = ■ Lower Input Capacitance In = -6.0 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature

Contextual Info: S F W /I9 6 3 0 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS = -2 0 0 V ^D S o n - 0 -8 In ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -200V

BEL 1240

Contextual Info: Raytheon Electronics Semiconductor Division RC4200 A n a lo g M u ltip lie r Features Multiply, divide, square, square root, RMS-to-DC conversion, AGC and modulate/demodulate Wide bandwidth - 4 MHz Signal-to-noise ratio - 94 dB • High accuracy • Nonlinearity-0 .1 %

Contextual Info: Advanced SFR/U9224 Power MOSFET FEATURES BV DSS = -250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n - ■ Lower Input Capacitance In = -2.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = -250V

C11371

Abstract: AD515K 2N 10261 transistor application circuit Transistor AF 138S analog devices modell 281 analog devices modell 118 Model 310J ac121 inverter welder 4 schematic
Contextual Info: ANALOG DEVICES DATA ACQUISITION PRODUCTS CATALOG SUPPLEMENT Introduction USING THIS CATALOG SUPPLEMENT This Supplement includes some 70 products introduced sub­ sequent to the publication o f our Data Acquisition Products Catalog. I f you do not already have the Data Acquisition

4200D JRC

Contextual Info: ANALOG MULTIPLIER NJM4200 The NJM4200 is the industry’s first integrated circuit multiplier to have complete compensation for nonlinearity, the primary source of error and distortion. This is also the first IC mustiplier to have three on-board operational amplifiers

Contextual Info: S F W /I9 5 1 0 Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 1 0 n A M a x . @ V DS = -100V

Contextual Info: SFP9Z24 Advanced Power MOSFET FEATURES BV DSS = -60 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^ D S o n - 0 . 2 8 Q. In = -9.7 A ■ 175°C Opereting Temperature TO-220 ■ Extended Safe Operating Area

Contextual Info: SFR/U9224 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge -2 5 0 V ^D S o n - 2 .4 In ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = -250V

RFP45N06

Contextual Info: RFG45N06, RFP45N06, RF1S45N06SM in te fs il D ata S h e e t J u l y 19 99 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs File N u m b e r 3 5 7 4 .4 Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: SFW/I9Z14 Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 1 0 n A M a x . @ V DS = -60V

Contextual Info: SFR/U9110 Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^ D S o n - In ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -100V

Contextual Info: PD - 9 .1 4 5 0 A International I R Rectifier IRG4BC30F P R ELIM IN A R Y Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

irf9640n

Abstract: 1RF9640 1RF9640S 422B IRF9640 D66A IRF9640S
Contextual Info: PD-9.422B International @*11Rectifier IRF9640 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channei Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = -200V ^DS on = 0 - 5 0 n lD = - 1 1 A

Contextual Info: SFR/U9024 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge -6 0 V ^D S o n - 0.28 Q. In ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -60V

SFP9614

Contextual Info: SFP9614 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS = -2 5 0 V ^ D S o n = 4 . 0 £2 lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : -1 0 |^A (M a x.) @ V DS = -250V