250UW Search Results

CEA-XX-250UW-350

Abstract: CEA-XX-250UW-10C cea 250UN 250uw-350 strain strain gage Vishay CEA-XX-250UW-120 250uw strain
Contextual Info: 250UW Vishay Micro-Measurements General Purpose Strain Gages - Linear Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS See Note 1 OPTIONS AVAILABLE See Note 2 CEA-XX-250UW-120 CEA-XX-250UW-175 CEA-XX-250UW-350 CEA-XX-250UW-10C 120 ± 0.3% 175 ± 0.3%

250uw strain

Contextual Info: 250UW Micro-Measurements General Purpose Strain Gages - Linear Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS See Note 1 OPTIONS AVAILABLE See Note 2 120 ± 0.3% 175 ± 0.3% 350 ± 0.3% 1000 ± 0.3% CEA-XX-250UW-120 CEA-XX-250UW-175 CEA-XX-250UW-350

CEA-XX-250UN-120

Abstract: CEA-XX-250UN-350
Contextual Info: 250UN Micro-Measurements General Purpose Strain Gages - Linear Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS See Note 1 OPTIONS AVAILABLE See Note 2 CEA-XX-250UN-120 CEA-XX-250UN-350 120 ± 0.3% 350 ± 0.3% P2 P2 actual size DESCRIPTION General-purpose gage with narrow geometry. Exposed

Contextual Info: SM Crystal -55+125°C CC6A Specifications Product Parameters Terminations: Gold flashed pads Sn/Ag/Cu plated pads 2.20 typ   T1A T3A  Calibration tolerance (@ 25°C): ±50ppm  Temperature stability: ±50ppm over -40 to +85°C ±100ppm over -55 to +125°C

EP-08-031DE-120

Abstract: EP-08-250BG-120 10 35L VISHAY EK 03 125BZ 10C CEA-XX-125UN-350 EP-08-500BL-350 WK-XX-250AF-350 EP-08-125BT-120 CEA-XX-250UW-10C EP-08-125AD-120
Contextual Info: Linear Patterns Vishay Micro-Measurements General Purpose Strain Gages - Linear Patterns FEATURES • Gage patterns designed for measuring strain in a single direction • Single-grid and parallel dual-grid patterns • Gage lengths from 0.008 in 0.20 mm to 0.500 in (12.7 mm)

Contextual Info: High Performance 8Kx8 CMOS SRAM II AS7C164 AS7C164L 8Kx8 CMOS SRAM Common I/O \F E A T U R E S • Organization: 8,192 words x 8 bits • Easy Memory Expansion with CE1, CE2 and OE Options • High Speed: 12/15/20/25 ns Address access time 3,4,5,6 ns Output Enable access time

cmos QCIF sensor

Abstract: cmos mt9t001 cmos 120fps MT9M001
Contextual Info: PRELIMINARY‡ MT9T001 3-MEGAPIXEL DIGITAL IMAGE SENSOR 1/2-INCH 3-MEGAPIXEL CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR PART NUMBER: MT9T001P12STC Features Table 1: • • • • • • • • • DigitalClarity Image Sensor Technology High frame rate Global Reset Release

Contextual Info: PRODUCTS Description: High Precision Frequency Crystal Unit Through Hole High Precision Fundamental Inverted Mesa AT cut crystal for TCXO, VCXO, and OCXO HC-43/U (U43 Series) Part Number: U43-AT-Freq-CL Example: U43-AT-100.000-20 • Specification Part No.

Contextual Info: PRODUCTS Description: High Precision Frequency Crystal Unit Through Hole High Precision Frequency AT cut crystal for TCXO, VCXO, and OCXO HC-35/U (U35 Series) Part Number: U35-AT-Freq-CL-OT Example: U35-AT-50.000-20-3OT • Specification HC-35/U Example

Contextual Info: PRODUCTS Description: High Precision Frequency Crystal Unit Through Hole High Precision Frequency Fundamental AT cut crystal for TCXO, VCXO, and OCXO HC-45/U (U45 Series) Part Number: U45-AT-Freq-CL-OT Example: U45-AT-10.000-20-Fund • Specification HC-45/U

Contextual Info: PRODUCTS Description: High Precision Frequency Crystal Unit Through Hole High Precision AT cut crystal for TCXO, VCXO, and OCXO HC-52/U (U52 Series) Part Number: U52-AT-Freq-CL-OT Example: U52-AT-100.000-20-5OT • Specification HC-52/U Example Part No.

Contextual Info: 250BF Micro-Measurements General Purpose Strain Gage - Linear Pattern GAGE PATTERN DATA actual size GAGE DESIGNATION RESISTANCE OHMS OPTIONS AVAILABLE See Note 1, 3 See Note 2 See Note 3 EA-XX-250BF-350 ED-DY-250BF-10C EK-XX-250BF-10C S2K-XX-250BF-10C WA-XX-250BF-350

MT9M001

Abstract: MT9D001 "1.3 megapixel" 0XA0 REG0X09 cmos SENSOR MT9T001 MT9T001P12STC CMOS global shutter QVGA
Contextual Info: PRELIMINARY‡ MT9T001 3-MEGAPIXEL DIGITAL IMAGE SENSOR 1/2-INCH 3-MEGAPIXEL CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR PART NUMBER: MT9T001P12STC Features Table 1: • • • • • • • • • DigitalClarity Image Sensor Technology High frame rate Global Reset Release

dgc1

Abstract: AS5LC1008DJ
Contextual Info: SRAM AS5LC1008 128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout PIN ASSIGNMENT Top View 32-Pin, 400-mil Plastic SOJ (DJ) & Plastic TSOPII (DGC & DGCR) FEATURES • High-speed access times of 10, 12, 15 and 20 ns • High-performance, low-power CMOS process

cea 250UN

Abstract: CEA-XX-250UN-350 CEA-XX-250UN-120 strain Gages CEA 250UW 250uw strain 250UN strain gage Vishay resistance strain gage
Contextual Info: 250UN Vishay Micro-Measurements General Purpose Strain Gages - Linear Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS See Note 1 OPTIONS AVAILABLE See Note 2 CEA-XX-250UN-120 CEA-XX-250UN-350 120 ± 0.3% 350 ± 0.3% P2 P2 DESCRIPTION General-purpose gage with narrow geometry. Exposed

Contextual Info: 2/7 TAI-SAW TECHNOLOGY CO., LTD. SMD 3.2x2.5 26.0MHz Crystal Unit MODEL NO.: TZ1606A REV. NO.: 4 Revise: Rev. 1 2 3 4 Rev. Page N/A 5 3 3 Rev. Account Date Initial release Change T/R drawing ESR change to 40ohm Add Co & C1 spec. 04/07/09 N/A 07/01/09 ECN-200900240

Contextual Info: SM Crystal -55+125°C CC2A Specifications Product Parameters Terminations: Gold flashed pads Sn/Ag/Cu plated pads 3.40 max 3.5 1.20 1.20 1.8 2.1 1.8 TOP VIEW Features       Suitable for Avionics, Sat Comms etc Military temperature range -55+125°C option

hard disk head preamp

Abstract: "Hard Disk Drive" preamplifier Pre amplifier hdd hard drive preamp circuit GMR head preamplifier MAGNETIC HEAD reader writer REG09 gmr head preamp TDA5360UH MAGNETIC HEAD circuit Differentiator peak detect
Contextual Info: INTEGRATED CIRCUITS TDA5360 Pre–Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads Objective specification, Revision 2.2 Philips Semiconductors 1998 Jul 30 Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

AS5LC1008

Contextual Info: SRAM AS5LC1008 128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout PIN ASSIGNMENT Top View 32-Pin, 400-mil Plastic SOJ (DJ) & Plastic TSOPII (DGC & DGCR) FEATURES • High-speed access times of 10, 12, 15 and 20 ns • High-performance, low-power CMOS process

Contextual Info: 2/7 TAI-SAW TECHNOLOGY CO., LTD. SMD 3.2x2.5 26.0MHz Crystal Unit MODEL NO.: TZ1606A REV. NO.: 5 Revise: Rev. 1 2 3 4 5 Rev. Page N/A 5 3 3 4 Rev. Account Date Ref. No. Revised by Initial release Change T/R drawing ESR change to 40ohm Add Co & C1 spec. Pin connection updated

Contextual Info: ADS-230, ADS-231 ® Low-Power, 12-Bit, 1.0/1.5MHz Sampling A/D Converter FEATURES INPUT/OUTPUT CONNECTIONS PIN FUNCTION PIN FUNCTION 1 AGND 44 2 VBS 43 BIT 1 MSB Small 44-pin Leaded Chip Carrier 3 VB 42 BIT 2 Single +5V supply 4 VR/16 41 BIT 3 5 VT 40

Contextual Info: SM Crystal -55+125°C CC7A Specifications Product Parameters Terminations: Gold plated pads Sn/Ag/Cu plated pads Frequency range: 24.0 ~ 30.0MHz 1.60 max SOLDER PAD LAYOUT 1.80 0.70 T1A T3A  specify Temperature stability / range: ±50ppm over -40 to +85°C

e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Contextual Info: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that