25 TLJ Search Results

Contextual Info: a l Semiconductor May 1992 DP8420V/21V/22V-33, DP84T22-25 microCMOS Programmable 256k/1M /4M Dynamic RAM Controller/Drivers General Description Features The DP8420V/21V/22V-33, DP84T22-25 dynamic RAM controllers provide a low cost, single chip interface between

75AFC

Abstract: L56A b644 us25x
Contextual Info: s e m ik r d n A b s o l u t e M a x im u m R a t in g s Sym bol C onditions ' V ets VcGR lc IcM R ge = 20 k ii Tcase= 25/80 °C Tcase= 25/80 °C; tp — 1 ms V ges Ptot per Tj, Tag Visoi humidity climate IGBT, Tcase= 25 °C AC, 1min. D1N 40 040 DINIEC68T.1

CWR29

Contextual Info: Tantalum Series Guide TRJ TLJ Professional Pages 47-49 Consumer Pages 14-16 TCJ Low ESR Polymer Pages 44-46 TPS THJ TAJ High Reliability High Temperature Pages 50-52 Generic Purpose and High CV Capacitors Pages 5-8 Low ESR Pages 25-34 TPS III Ultra Low ESR

6264l

Abstract: 27C301G 27c301 fp 101g TI232 6116asp 50464cp ls 11m M62256FP 02S-0
Contextual Info: • PACKAGE INFORMATION • Dual-In-line Plastic U n it: m m inch Scale 1/1 • DP-16B • DP-18B 2 54 + 0 25 0 48 < 0 I (0 100 ‘ 0 0 1 0 ) (0 019 * 0 004) -X - 4 4 .- . 0 48 t 0 I ? 54 f 0 25 ~ (0 019 ± 0 004) (0 100 ± 0 010) • DP-20N • DP-18C 2 2 2 6 (0 1 7 6 )

M37702S1FP

Abstract: 00004B BL p6d 4016 counter 27F16 BL p0d M37702M2AXXXFP M37702S1BFP M37702M2BXXXFP M37702M2-XXXFP
Contextual Info: MITSUBISHI MICROCOMPUTERS M37702M2AXXXFP, M37702M2BXXXFP M37702S1AFP, M37702S1BFP M37702M2-XXXFP and M37702S1FP are respectively unified into M37702M2AXXXFP and M37702S1AFP. SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION M37702M2BXXXFP, M37702S1BFP The fastest instruction at 25 MHz frequency . 160 ns

F18002

Abstract: 3704 transistor WE VQE 11 E Motorola Bipolar Power Transistor Data FR 3708 e180 MJF18002 221A-06 221D MJE18002
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet SW ITCHMODE™ M JE 18002* M JF18002* NPN Bipolar Power Transistor For Switching Power Supply Applications 'M otorola Preferred Dsvlce POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS

*8065s

Abstract: 28-pin SOJ SRAM B62B
Contextual Info: October 1989 Edition 1.0 FUJITSU DATASHEET — MB82B001-25/-35 1M BIT HIGH SPEED BI-CMOS SRAM 1,048,576 WORDS x 1 BIT HIGH SPEED BI-CMOS STATIC RANDOM ACCESS MEMORY The Fujitsu MB82B001 is 1,048,576 words x 1 bit static random access memory fabricated with

Contextual Info: 2SA1937 TOSHIBA TENTATIVE 2 S A 1 937 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SW ITCHING APPLICATIONS • : mm High Voltage : V ç e O“ —600V M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: Temic BA779.BA779S S e m i c o n d u c t o r s Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators Absolute Maximum Ratings Tj = 25°C Test Conditions Parameter Reverse voltage

NS32008

Abstract: 916741 NS32081 NS32032 NS32GX32
Contextual Info: p r e l im i n a r y NS32381-15/NS32381-20/NS32381-25/NS32381-30 Floating-Point Unit General Description The NS32381 is a second generation, CMOS, floating-point slave processor that is fully software compatible with its forerunner, the NS32081 FPU. The NS32381 FPU functions

25N50E

Abstract: 501 mosfet transistor mount chip transistor 332
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M TV25N 50E TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 25 AMPERES 500 VOLTS RDS on = °-200 OHM N-Channel Enhancement-Mode Silicon Gate The D3pAK package has the capability of housing the largest chip

CD4308A2

Contextual Info: O P i i — D 4 3 _ _ A 2 _ F owerex, Inc., 200 Hillls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U 3¡ S C R P O W -R -B L O K M o d u le 25 Amperes/800 Volts Description:

PCI FOOTPRINT

Abstract: OA81
Contextual Info: CYM1911 P R E L IM IN A R Y CYPRESS SEMICONDUCTOR Features • High-density 1-megabit SRAM module • High-speed CMOS SRAMs — Access time o f 25 ns • Low active power — 10.4W max. • SMD technology • Latched address inputs • Four completely independent memory

16F5

Abstract: 4c1m16
Contextual Info: Preliminary information Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - RAS-only o r ¿AS-before-ftAS refresh

TI18

Contextual Info: L7C185 8K x 8 Static RAM Low Power DESCRIPTION FEATURES □ 8K x 8 Static RAM with Chip Select Powerdown, O utput Enable □ □ □ □ Auto-Powerdown Design A dvanced CM OS Technology H igh Speed — to 12 ns m aximum Low Power Operation Active: 425 mW typical at 25 ns

PIN DIAGRAM of LM 324

Abstract: 85u0 sharp LZ93N lz93n25
Contextual Info: Timing Pulse Generator 1C for 1/2" CCD LZ93N25 / / v Timing Pulse Generator IC for 1/2" CCD • Pin Connections Description T h e L Z 93N 25 is a CM OS timing IC which pro­ vides drive timing pu lses and signal p rocess pulses for CCD area sen sors. It is applicable to high sp eed electronic shutter at

L9822ES

Abstract: MUL71WATT15 DRI RELAYS E 415
Contextual Info: SGS-THOMSON K K M M g î M K l û i L 9 8 2 2 E OCTAL SERIAL SOLENOID DRIVER A D VA N C E DATA • EIGHT LOW RosonDMOS OUTPUTS ■ ■ . ■ ■ . ■ ■ 0.5Q AT lo = 1A @ 25°C Vcc = 5V± 5% 8 BIT SERIAL INPUT DATA (SPI) 8 BIT SERIAL DIAGNOSTIC OUTPUT FOR

CAT28C16A

Contextual Info: IIIIICRTRLY5T • ■ fff I S E M I C O N D U C T O R C A T 2 8 C 1 6 A 16K-Bit CMOS E’PROM FEATURES ■ Fast Read Access Times: 200 ns End of Write Detection: DATA Polling ■ Low Power CMOS Dissipation: -Active: 25 mA Max. -Standby: 100 |iA Max. Hardware Write Protection

Contextual Info: HM62W1664HB Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-415 A (Z) Preliminary Rev. 0.1 Jul. 18, 1996 Description The HM62W1664HB is an asynchronous high speed static RAM organized as 64-kword x 16-bit. It realize high speed access time (25/30 ns) with employing 0.8 flm CMOS process and high speed circuit

Contextual Info: HI GH- SPE ED 3.3V 2K x 8 DU A L - P O R T IDT71V321S/L IDT71V421S/L STATI C RAM WI TH I N T E R R U P T • • • • • FEATURES: • High-speed access — Industrial: 25ns max. — C om m ercial: 25/35/55ns (max.) • Low -power operation — ID T71V321S/ID T71V421S

M37712

Abstract: M37712M4BXXXFP ScansUX59
Contextual Info: M IT S U B IS H I M IC R O C O M P U T E R S M 37712M 4BXXXFP S IN G L E -C H IP 1 6 -B IT C M O S M IC R O C O M P U T E R DESCRIPTION • Low power dissipation at 25 MHz frequency .95mW (Typ.) • • Interrupts .21 types 7 levels

2T31

Abstract: 2T312A
Contextual Info: M A INS TYPE FREQUENCY XTAVM ann VDRM 16 * r .s TION TION T10N TION TION TION TION TION TION TION TION TION TION 05 1 2 3 4 5 6 7 8 9 10 11 12 JTSM 9 T 7M A (V) T JM= 1 2 5 3C 50 100 (m A^ 100 vii/LU JUNCTION TEMPERATURE = 25°C v VGT 1 XH ; VTM 9 XTM max. max. ! max.

lem HA

Abstract: 2SD1127 1127G 2SD1127G
Contextual Info: HITACHI 2 S D 1 1 2 7 R SILICON NPN T R IP L E D IFFU SED PO W ER SW ITCHING L . lia s e 2. Collector (Mangi i . Emuler (Dimensions in mm) {J E D E C TO-220AB) I A B S O L U T E MAXIMUM RA TIN G S (Ta=25°C) Symbol liem MAXIMUM C H A N N EL DISSIPA TIO N

MR 4710 IC

Abstract: KL SN 102 lcd MR 4710 ks 4290 317 jrc SAA 1350 LM 1405 1470 LM jrc 317 IC JRC 2910
Contextual Info: NJU6679 128 = J ^ E > x If V •m b "? 1 3 2 - iz ^ 'y 3? L C D æ > h /< ■ n NJU6679 i t . 128^> x 132-ttf* m ? h7?7’ LCDT 7 ^ * t t 0 COLCDh* 7ÏA* lis 25, 344tf îih 7 Â^f* -$RAM. CPU<i>*-7i<iJl[I&, i'A - V i i t f f P T ? 1 8 j £ £ f r W ifrj/W