24S40 Search Results

OL550A

Abstract: OL580A
Contextual Info: O K I 23E J> SEMICONDUCTOR GROUP b?24S40 1.55//m LD DIP Module r-_ > 000Ö000 4 ^ OL550A,OL580A • DESCRIPTION OKI 550A and OL580A are 1.55//m InGaAsP/lnP laser diode DIP modules with single mode and multimode fiber pigtail, respectively. These modules are optimum light sources for long distance

MSC5301B-01GS-BK

Abstract: 11 pin 8 segment LcD MSC5301B-01 QFP100-P-1420-BK C14EE
Contextual Info: O K I Semiconductor MSC5301B-01 COMMON/SEGMENT DRIVER WITH RAM GENERAL DESCRIPTION The MSC5301B-01 is an LCD driver LSI w ith a built-in RAM. The device's bit m apping m ethod offers greater flexibility in w hich each bit of the RAM for display controls each section on the LCD

Contextual Info: O K I Semiconductor MSC2 3 1 4 0 C-XXBS10 /DS 10 1,048,576-Word x 40-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23140C-xxBS10/DS10 is a fully decoded 1,048,576-word x 40-bit CMOS Dynamic Random Access M emory M odule com posed of ten 4-Mb DRAMs 1M x 4 in SOJ packages

MSM27C421AZB

Contextual Info: O K I Semiconductor MSM27C421AZB 524,288-Word x 8-Bit One Time PROM D E S C R IP T IO N The MSM27C421AZB is a 4 M b electrically P rogram m ab le R ead-O nly M em ory o rg an ized as 524 288 ^ rM S M 2 7 C 4 2 1 AZBSM27Cf421 AZB ° p8rateS ° n 3 sinSle 5 V Pow er su PPlv an d is TTL com patible. Since

K242M

Abstract: l75h MSM54V16255A
Contextual Info: PRELIMINARY OK! Semiconductor REVISION-2 1996.11.2 M S M 5 4 V 1 6 2 5 5 A / S L ~~ 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM54V162S5A/SL is a 262,144-word x 16-bit dynamic R A M fabricated in OKI's CM O S silicon gate technology. The MSM54V16255A/SL achieves high integration,high-speed operation,and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM54V16255A/SL is

Contextual Info: O K I Semiconductor M SC23240C-XXBS20/PS20 2,097,152-Word x 40-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23240C-xxBS20/DS20 is a fully decoded 2,097,152-word x 40-bit CMOS Dynamic Random Access M em ory M odule com posed of tw enty 4-Mb DRAMs 1M x 4 in SOJ packages

Contextual Info: O K I Semiconductor MSM5299A 8O-DOT SEGMENT DRIVER GENERAL DESCRIPTION T he M SM 5299A is a d o t m atrix LCD se g m e n t d riv e r LSI w h ich is fab ricated b y CM O S lo w p o w e r m etal g ate technolog y . T his LSI consists of an 80-bit b id irectio n al sh ift register, 80-bit latch, 80b it level sh ifter a n d 80-bit 4-level d riv er.

5218a

Abstract: 5218 a ic 5218 a sim 5218 LD 5218 5218P MSM5218 CSB384P 5205RS
Contextual Info: O K I Semiconductor 1SM5218 ADPCM S P E E C H A N A LY S IS /S Y N T H E S IS 1C G E N E R A L D E SC R IP TIO N T he M SM 5218 is a c o m p lete sp eech a n a ly s is / sy n th esis LSI fea tu rin g th e A d a p tiv e D iffer­ e n tia l P u ls e C o d e M o d u la tio n A D P C M

733HC

Abstract: CCDs Charge Coupled Devices tr4l 2SC372 OPA2048CA QPA2048CA photo transistor array
Contextual Info: OKI electronic QPA2 0 4 8 CA com ponents Self-Scanning Line Sensor GENERAL DESCRIPTION The OPA2048CA is a 2,048-bit, 1-dimensional diode array comprised of PN junction photodetector diodes and CCDs charge coupled devices . By using a 2-phase clock pulse, transfer pulse, and reset

TSOP32 pad

Abstract: MSM7570-01 dtmf reciver ic G.723 ic codec B72L
Contextual Info: O K I Semiconductor MSM7570-01 Multi-Function ADPCM CODEC GENERAL DESCRIPTION The M SM 7570-01, developed for advanced digital cordless telephone system s, is single channel A D PC M CO D EC IC w hich perform s m utual transcoding betw een the analog voice band signal

Contextual Info: O K I Semiconductor MSM514 4 1 OA/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE WRITE PER BIT MODE TYPE DESCRIPTION The MSM514410A/AL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the MSM514400A/AL is OKI's CMOS silicon gate process technology.

MSM514402-10

Abstract: MSM514402-70 MSM514402-80
Contextual Info: 5öE D • b ? E H 2 H D 0 0 1 3 0 1 3 010 H O K I J O K I S E M I C O N D U C T O R GROUP O K I semiconductor MSM514402 1,048,576-Word x 4-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE GEN ERA L DESCRIPTION The MSM514402 is a new generation dynamic RAM organized as 1,048,576-word x 4-bit.

Contextual Info: O K I electronic components KGF1165_ Medium-Power Amplifier for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The K G F 1165 is a one-stage resistive feedback type m edium p ow er am plifier for the U H F band that features high output p ow er and low current dissipation. The internally m atched 50 Î2 input

Contextual Info: O K I Semiconductor MSM6814/6815 Single Chip CODEC with Time Slot Assignment GENERAL DESCRIPTION The MSM6814 and MSM6815 are single chip CODEC w ith tim e slot assignm ent TACODEC w hich are fabricated by Oki's low pow er consum ption CMOS silicon gate technology.

lc174b

Abstract: active suspension transistor bt 808
Contextual Info: l- t t O K I Semiconductor MSM56V16400 2-Bank x 2,097,152-Word x 4-Blt SYNCHRONOUS DYNAMIC RAM D ESC R IP TIO N , * ‘S* 2' bank X2,097,152' word x4*bitsynchronous Dynamic RAM, fabricated m OKI s CMOS silicon gate process technology. ~ The device operates at 3.3 V, and the inputs and out puts are LVTTL Compatible.

EC12D500

Abstract: EC12S1500 ES12S800 EC17-040 Semiconductor Circuits EC17-040 EC24S400 ES12S1500 EA5S3000 EC23-100 ES11-300
Contextual Info: EMERSON/ SEMICONDUCTOR SS D 1 330B1S4 0QQD7n SEMICONDUCTOR CIRCUITS Ì p D “T ' S V O S ES,EA,EC High E fficiency Pow er Supplies p h a s s is Mount and Plug-In Packages NEAR-CONSTANT EFFICIENCY TO 70%: 105-125 Vac IN LINE TRANSIENT IMMUNITY >60 dB LOW CASE TEMPERATURE

Contextual Info: O K I Semiconductor MSM7586-01 71/4 Shift Q P SK M O D EM /A D PCM C O D EC G E N E R A L D E S C R IP T IO N The MSM7586 is a CMOS IC developed for use with digital cordless telephones. The device provides a 7t/4 shift QPSK modem function and a CODEC function which performs transcoding

EA5S3000 K

Abstract: 5s1500 49RANGE
Contextual Info: ' EMERSON/ SEMICONDUCTOR SS T ~ | 330B1S4 □ □ □ □ 7 n ” c|’ SEMICONDUCTOR C IR C U ITS D x “T - S V O S ES,EA,EC High E fficiency Pow er Supplies ^Chassis Mount and Plug-In Packages • NEAR-CONSTANT EFFICIENCY TO 70%: 105-125 Vac IN • LINE TRANSIENT IMMUNITY

ST chn 624

Abstract: chn 712 LSPM2 CHN 618 chn 631 chn 648 equivalent CHN 602 CHN 612 h724 MSM6588
Contextual Info: O K I Semiconductor MSM6588 M S M 6588 contents GENGERAL D ESCRIPTION . 568 FEATURES. 568

MSM514102-10

Abstract: MSM514102-8A
Contextual Info: Mb E D • 3724240 G G O W l bbO H O K I J O K I sem iconductor_ T - v <-23 - J * M SM 514102 K 1 SEMICONDUCTOR g r o u p 4,194,304-WORDx 1-BIT DYNAMIC RAM: STATIC COLUMN MODE TYPE GENERAL DESCRIPTION The MSM514102 is a new generation dynamic RAM organized as 4,194,304 words by 1 bit.