W26NM60
Abstract: w26nm60 equivalent STW26NM60
Contextual Info: STW26NM60 N-CHANNEL 600V - 0.125Ω - 26A TO-247 MDmesh MOSFET Table 1: General Features TYPE STW26NM60 • ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 600 V < 0.135 Ω 30 A TYPICAL RDS(on) = 0.125 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY
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stw26nm60o-247w26nm60w26nm60 equivalent |
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W26NM50
Abstract: STW26NM50
Contextual Info: STW26NM50 N-CHANNEL 500V - 0.10Ω - 26A TO-247 MDmesh MOSFET Table 1: General Features TYPE STW26NM50 • ■ ■ ■ Figure 1: Package VDSS RDS on ID 500 V < 0.120 Ω 30 A TYPICAL RDS(on) = 0.10 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY
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stw26nm50o-247w26nm50 |
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W30NM60D
Abstract: ZVS phase-shift converters W30NM60 STW30NM60D Fast Recovery Bridge 25C312
Contextual Info: STW30NM60D N-CHANNEL 600V - 0.125Ω - 30A TO-247 Fast Diode MDmesh MOSFET Table 1: General Features TYPE STW30NM60D • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 600 V < 0.145 Ω 30 A TYPICAL RDS(on) = 0.125 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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stw30nm60do-247w30nm60dzvs phase-shift converters+3w30nm60fast recovery bridge25c312
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W30NM60
Abstract: ZVS phase-shift converters STW30NM60D W30NM60D mosfet 600V 30A JESD97 25C312
Contextual Info: STW30NM60D N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh Power MOSFET General features Type VDSS RDS on ID STW30NM60D 600V < 0.145Ω 30A • High dv/dt and avalanche capabilities ■ 100% avalanche rated ■ Low input capacitance and gate charge
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stw30nm60do-247w30nm60zvs phase-shift converters+4w30nm60dmosfet 600v 30ajesd9725c312
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w26nm60 equivalent
Abstract: w26nm60 STW26NM60
Contextual Info: STW26NM60 N-CHANNEL 600V - 0.125Ω - 30A TO-247 MDmesh MOSFET Table 1: General Features TYPE STW26NM60 • ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 600 V < 0.135 Ω 30 A TYPICAL RDS(on) = 0.125 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY
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stw26nm60o-247w26nm60 equivalentw26nm60 |
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W26NM50
Abstract: STW26NM50
Contextual Info: STW26NM50 N-CHANNEL 500V - 0.10Ω - 30A TO-247 MDmesh MOSFET Table 1: General Features TYPE STW26NM50 • ■ ■ ■ Figure 1: Package VDSS RDS on ID 500 V < 0.120 Ω 30 A TYPICAL RDS(on) = 0.10 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY
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stw26nm50o-247w26nm50 |
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BACC65BC12
Abstract: bacc65a BACC65BC12AA BACC65 BACC65bc BACC65AF bacc65B BACC65BC12a STA5
Contextual Info: TH I S D R A W I NG IS UNPUBL IS H E D . C O P Y R I G H T 20 RELEASED BY TYCO ELECTRONICS FOR CORPORATION, ALL PUBLICATION RIGHTS LOC RESERVED. DF REV I S I O N S D I ST A5 D E S C R I P T I ON REV PER ECO -0 1 3 3 5 3 CT -27- ER A} C3 <o <o A} C3 <o o o
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24june2004bacc65bc12bacc65abacc65bc12aa+6bacc65bacc65bcbacc65afbacc65bbacc65bc12asta5
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STW30NM60D
Abstract: JESD97 ZVS phase-shift converters mosfet 600V 100A ST 15A16s W30NM60 W30NM60D 25C312
Contextual Info: STW30NM60D N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh Power MOSFET General features Type VDSS RDS on ID STW30NM60D 600V < 0.145Ω 30A • High dv/dt and avalanche capabilities ■ 100% avalanche rated ■ Low input capacitance and gate charge
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stw30nm60do-247jesd97zvs phase-shift converters+5mosfet 600v 100a st15a16sw30nm60w30nm60d25c312
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Tape Resistivity 10E8 Ohm 10E4
Abstract: STMicroelectronics smd marking code smd diode order marking code stmicroelectronics 10E12 10E4 10E8 AN1235 IEC286-3 J-STD-020A Lead Free reflow soldering profile BGA
Contextual Info: AN1235 APPLICATION NOTE ASD and IPAD™ FLIP-CHIP: PACKAGE DESCRIPTION AND RECOMMENDATIONS FOR USE I - INTRODUCTION The competitive market of portable equipment, notably the mobile phone market, is driven by a challenging development of highly integrated products. To allow manufacturers of portable equipment to reduce
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an1235tape resistivity 10e8 ohm 10e4stmicroelectronics smd marking codesmd diode order marking code stmicroelectronics+610e1210e410e8iec286-3j-std-020alead free reflow soldering profile bga
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STW30NM60D
Abstract: 15a diode W30NM60 ZVS phase-shift converters W30NM60D
Contextual Info: STW30NM60D N-CHANNEL 600V - 0.125Ω - 30A TO-247 Fast Diode MDmesh MOSFET Table 1: General Features TYPE STW30NM60D • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 600V < 0.145Ω 30A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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stw30nm60do-24715a diodew30nm60+2zvs phase-shift convertersw30nm60d
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W26NM60
Abstract: w26nm60 equivalent STW26NM60 B2 marking code Zener zener 200a
Contextual Info: STW26NM60 N-CHANNEL 600V - 0.125Ω - 30A TO-247 MDmesh MOSFET Table 1: General Features TYPE STW26NM60 • ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 600 V < 0.135 Ω 30 A TYPICAL RDS(on) = 0.125 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY
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stw26nm60o-247w26nm60w26nm60 equivalent+2b2 marking code zenerzener 200a
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BACC65BC12
Abstract: bacc65bc12na BACC65Bc BACC65BC12a 1445693-4 BACC65BC12N
Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT - RELEASED FOR PUBLICATION BY - 6 5 4 3 2 - LOC - ALL RIGHTS RESERVED. 1 REVISIONS DIST - P LTR N SEE JACKSCREW DETAILS .003 +.001 .672 -.002 .000 .003 .003 .003 .003 .003 .702 .885 1.067 1.250 .003 .337 .520 .003
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