24800 Search Results

0533

Abstract: D20200
Contextual Info: C 11 Î/ SEMICONDUCTOR DIV HE D 3 «cal laaibHO oooim^b r -iS-¡/S-01 A G24802 CMD Microcircuits CMOS Voice Packet Assembler/Disassembler VPAD Features General Description • Advanced C M O S design for low power consumption • Interfaces with G 24800 M PR T Transparent 8-bit parallel

Contextual Info: M D/ SEM ICONDUCTOR D I V HE D lfi31bHQ 0 0 0 1 4 1 3 3 • CAL T-1S-V5-01 A G24802 CMD Microcircuits CMOS Voice Packet Assembler/Disassembler VPAD Features General Description • Advanced C M O S design for low power consumption • Interfaces with G 24800 M PR T Transparent 8-bit parallel

bsc25-0225

Abstract: bsc2502 RXB38
Contextual Info: ^ G 24800 CMD Microcircuits_ CMOS Mini-Packet Receiver/Transmitter MPRT Features • between one o r tw o 8-bit m icroprocessors (Transparent Voice a nd N on-Transparent Data) and a 2-w ire subscriber loop inter­ face. The G 24800 M PR T offers significant advantages in digital

Contextual Info: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function

48C20

Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
Contextual Info: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout

EDLSD224H5R5C

Abstract: EDLEN204RL3R3S supercapacitor EDLF473A5R5C EDLF474B5R5C EDLF684B5R5C EDLHW106D2R3R EDLHW226D2R3R EDLHW306D2R3R EDLHW475D2R3R
Contextual Info: Type EDL Electric Double Layer Supercapacitors Ultra High Capacitance, Small Case Size Options Type EDL electric double layer supercapacitors offer extremely high capacitance values farads in a variety of packaging options that will satisfy, low profile, surface mount, through hole and

SAMSUNG MCP

Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Contextual Info: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

GL032A

Abstract: S71GL032A S71GL032
Contextual Info: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this

M15451E

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

Contextual Info: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised

Contextual Info: Revision 22 IGLOO Low Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Low Power • • • • • 1.2 V to 1.5 V Core Voltage Support for Low Power Supports Single-Voltage System Operation 5 µW Power Consumption in Flash*Freeze Mode

740-0007

Abstract: EN29GL064 6A000
Contextual Info: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and

2c39

Abstract: 2C39B 2C39-B 24800 general electric Scans-0017382
Contextual Info: ELECTRONICS 2C39-B 2 C 3 9 -B ET-T1054B Page 1 PLANAR TRIODE 1 2 -6 1 DESCRIPTION AND RATINGFOR G R O U N D ED -G R ID OSCILLATOR A N D AM PLIFIER SERVICE M etal and Ceramic Low Interelectrode Capacitances High Transconductance Shock Resistant 100 W atts Plate Dissipation

UM0560

Abstract: STM8S105x6 STM8L STM8 bootloader STM8S105XX STM8S
Contextual Info: UM0560 User manual STM8L/S bootloader 1 Introduction This user manual contains the bootloader specifications for STM8L/S devices which contain a bootloader embedded in the system memory of the device the ROM . Through this firmware, the device memory can be erased and programmed using one of the standard

LCBT67S

Abstract: marking 3U 3T 3C diode N91E-AADA-35-1 IESNA RP 27 LRTB GFTG marking 3U 3T 3C diode 3E 3G LCBT67C LED 5050 WHITE CODE C CQ7P.EC-KSKU-5O8Q IEC62471
Contextual Info: Light Emitting Diodes LED ge 88 - 92 11 12 Light Emitting Diodes General Information Safety Instructions The use of new chip technologies means that OSRAM LEDs are delivering higher and higher levels of optical performance. Thus, even eye safety issues might increasingly need to be considered.

110R

Abstract: S29GL128N
Contextual Info: Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this

SA-275

Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
Contextual Info: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document

LH28F640BFHG-PBTL70A

Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F640BFHG-PBTL70A Flash Memory 64Mbit 4Mbitx16 (Model Number: LHF64FH9) Spec. Issue Date: September 27, 2004 Spec No: FM045022A LHF64FH9 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,

Contextual Info: MS1 . ESCC www.vishay.com Vishay Draloric Hi-Rel Thin Film MINI-MELF Resistors FEATURES • High-reliability product • ESA approved to ESCC 4001/022 • Advanced thin film technology • SnPb termination plating, minimum 6 % Pb APPLICATIONS • Aerospace

LRS1830

Contextual Info: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1830 Stacked Chip 256M x16 Boot Block Flash and 32M (x16) SCRAM (Model No.: LRS1830) Spec No.: EL14Z046 Issue Date: January 14, 2003 sharp L R S1 8 3 0 x Handle this document carefully for it contains material protected by international copyright law.

M29W640DB

Abstract: M29W640D M29W640DT A0-A21 6A000
Contextual Info: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns

M420000000

Abstract: FSB073 3FE00
Contextual Info: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector