247 1334 Search Results

fp50n06

Abstract: F50N06LE 50N06LE rfp50n06 T0-262AA
Contextual Info: U A D D ic RFG50N06LE. RFP50N06LE, RF1S50N06LE, RF1S50N06LESM 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs juiy 1996 Features Packages JEDEC STYLE TO-247 • 50A,60V • rDS ON =0.022i2 • • • • • SOURCE

1294JW8

Abstract: 154-42-GW24 101-4-B7-WM250 129-4-JW8 105-4-B7-WM250 101-4-gw24 155-42-G 770-003S100 106-4-B7-WM250 155-42-B7-WM250
Contextual Info: Series 77 “Full Nelson” Environmental Shrink Boots Part Number Cross-Reference Tyco Raychem To Glenair Pages 3 To 8 Hellerman To Glenair Pages 9 To 15 1211 Air Way Glendale, California 91201-2497 Telephone: 818-247-6000 • Facsimile: 818-500-9912 · EMail: sales@glenair.com

G20N60B3D

Abstract: BVces HGTG20N60B3D LD26 RHRP3060 igbt 600V 45UH
Contextual Info: S E M I C O N D U C T O R HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1996 Features Package • 40A, 600V at TC = +25oC JEDEC STYLE TO-247 • Typical Fall Time - 140ns at +150oC E C • Short Circuit Rated

fp50n06

Abstract: F50N06LE FP50N06L FG50N06L RF1S50N06LE RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
Contextual Info: RFG50N06LE, RFP50N06LE, RF1S50N06LE, RF1S50N06LESM S E M I C O N D U C T O R 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features • • • • • • • Packages JEDEC STYLE TO-247 50A, 60V rDS ON = 0.022Ω

F40N10LE

Abstract: 100V 10A NMOS TO220 40n10le 247 1334 RF1S40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE FP40N10L
Contextual Info: S E M I C O N D U C T O R RFG40N10LE, RFP40N10LE, RF1S40N10LE, RF1S40N10LESM 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs July 1996 Features • • • • • • • Packages JEDEC STYLE TO-247 40A, 100V rDS ON = 0.040Ω

V10N50BE

Abstract: AN7254 AN7260 RFV10N50BE fet 500v 10A
Contextual Info: RFV10N50BE S E M I C O N D U C T O R 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs August 1995 Features Package • 10A, 500V JEDEC STYLE 5 LEAD TO-247 • rDS ON = 0.480Ω • Very Fast Turn-Off Characteristics • Nanosecond Switching Speeds

Contextual Info: 03BL2M. .47 05BL3M. .47 05BL5M.A t 05CL3M.46 05CL5M. .46

Contextual Info: Filter connectors This version features an integrated rear spacer and front locking bolt, whereby the rear spacer incorporates an M 3 thread size and the locking bolt has an internal UNC 4-40 thread. The conven­ tional hexlocking bolts are not required. The square design of this insert prevents

3845

Abstract: seg 2212 18158 ut360
Contextual Info:


          

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SIEMENS 565-2

Abstract: B81121 X2 MKP B82524-V-A7 B85321-A-B9 B85321-A-B11 b81551-a-B9 B82302-A-A2 B85321-A-B12 B82791-A5-A5 Siemens B81121
Contextual Info: Inhaltsverzeichnis, Bestellnummern-Verzeichnis Bauformen-Übersicht Seite 5 12 Allgemeines 33 Entstörkondensatoren 53 Durchführungskondensatoren Durchführungsfilter 77 93 HF-Drosseln 105 Drosseln für Netzanwendungen 135 Drosseln und Filter für Daten- und Signalleitungen

ICEA-640

Abstract: Alcatel optical fiber 247 1334 601 1334 diode SR 360 Alcatel fiber Telcordia GR-20
Contextual Info: Alcatel 6820 Stranded Ribbon Cable Insatiable bandwidth demand means continu- ously growing networks and the need to maximize density in a given infrastructure. Today’s operators need high fiber count cables for critical backbone links, but don’t always

Contextual Info: Klimatechnik_19_09_2011_DE_:G1G_170_deutsch_.qxd 19.09.2011 17:25 Seite 1 EC/AC Radialventilatoren für die Klimatechnik Die Wahl der Ingenieure Ausgabe 09/2011 Klimatechnik_19_09_2011_DE_:G1G_170_deutsch_.qxd 19.09.2011 17:25 Seite 2 Die neuen Radialventilatoren für die Klimatechnik

247EH

Contextual Info: M S E A R R I S H M I C O N D U C T O R G T G 1 5 N 1 2 C 3 D 35A, 1200V, U F S S e r i e s N - C h a n n e l I G B T with A n t i- P a r a ll e l H y p e r f a s t D i o d e M ay 1997 Features Description • 35A, 1 200V at T c = 2 5 ° C T h e H G T G 1 5 N 1 2 0 C 3 D is a M O S gated high vo lta g e s w itc h ­

tms 3614

Abstract: 755-335 ST8600 ST 6244 A 06 / CT X112 ST8624 ST8632 x9301 X8302
Contextual Info: ST Sitronix ST8600 240 Channel Common Driver for STN LCD with High-Voltage Drive PRELIMINARY Notice: This is not a final specification. Some parameters are subject to change 1 Features „ Duty cycle up to 1/240 „ Intermediate voltage I/F „ LCD drive voltage: 43V max

75339P3

Contextual Info: HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S HARRIS S E M I C O N D U C T O R 70A, 55V, 0.012 Ohm, N-Channel, UltraFET Power MOSFETs March 1998 MM Features • 70A, 55V • Ultra Low On-Resistance, ros ON = 2i2 • Diode Exhibits Both High Speed and Soft Recovery

75329s

Abstract: HUF75329P3 19407
Contextual Info: HUF75329G3, HUF75329P3, HUF75329S3, HUF75329S3S HARRIS S E M I C O N D U C T O R 42A, 55V, 0.025 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 MM Features • 42A, 55V • Ultra Low On-Resistance, ros ON = 0.025(2 • Diode Exhibits Both High Speed and Soft Recovery

huf75337g3

Abstract: 75337S
Contextual Info: HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S HARRIS S E M I C O N D U C T O R 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs January 1998 Features ^ • 62A, 55V M These N-Channel power MOS­ • Ultra Low On-Resistance, ros ON = • Diode Exhibits Both High Speed and Soft Recovery

75345p

Abstract: 75345p harris 75345S 2 SD 106 AI
Contextual Info: HUF75345G3, HUF75345P3, HUF75345S3, HUF75345S3S HARRIS S E M I C O N D U C T O R 75A, 55V, 0.007 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 MM Features • 75A, 55V • Ultra Low On-Resistance, ros O N = • Diode Exhibits Both High Speed and Soft Recovery

75332P3

Abstract: 75332S3 75332G3 huf75332G3
Contextual Info: HUF75332G3, HUF75332P3, HUF75332S3, HUF75332S3S HARRIS S E M I C O N D U C T O R 52A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs March 1998 Features ^ • 5 2 A ,5 5 V M • Ultra Low On-Resistance, ros ON = Description These N-Channel power M OS­

68230A

Abstract: pal16v8q PAL16R8ACN 99029 PAL16V8Q-15JC4 PAL16V8Z AM993 17640 8253 amd thermal analysis on pcb
Contextual Info: 9/5/01 PKG. TYPE CD 016 PD 016 PD 016 CD 020 CD 020 CD 020 CD 020 CD 020 PD 020 PD 020 Page 1 Thermal Resistance Analysis Update LD. FRM. NUMBER 18543 405 563 461 480 480 480 18550 590 590 X PAD DIM. MILS 167 140 150 127 160 160 160 167 150 150 MSD Advanced Assembly Technology

Wurth 744 224

Abstract: Wurth 744 841 247 wurth 744 203 744 252 510 wurth wurth 744 760 312 str 1195 wurth 744 137 LF 842 626 smd 1 928 498 839 WuRTH 744 311
Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : LF 7488920245 RoHS compliant SMD Antenne WE-MCA Chip-Antenna WE-MCA DATUM / DATE : 2004-10-11 A Mechanische Abmessungen / dimensions:

dual inlet

Contextual Info: Klimatechnik_19_09_2011_EN_:G1G_170_deutsch_.qxd 19.09.2011 17:31 Seite 1 EC/AC centrifugal fans for air-conditioning technology The engineer`s choice version 09/2011 Klimatechnik_19_09_2011_EN_:G1G_170_deutsch_.qxd 19.09.2011 17:31 Seite 2 The new centrifugal fans for

Contextual Info: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS uADQie rw o S E M I C rtru O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Description Features This fam ily of MOS gated high voltage switching devices

15N120C3

Abstract: TP15N120 15n120
Contextual Info: HAFRRIS HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1 200V, T c = 25°C The HGTG15N120G3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching