75332P3
Abstract: 75332S3 75332G3 huf75332G3
Contextual Info: 75332G3, HUF75332P3, HUF75332S3, HUF75332S3S HARRIS S E M I C O N D U C T O R 52A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs March 1998 Features ^ • 5 2 A ,5 5 V M • Ultra Low On-Resistance, ros ON = Description These N-Channel power M OS
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75332P3
Abstract: 75332S3 TO24 TA753 HUF75332P3 75332G3
Contextual Info: 75332G3, HUF75332P3, HUF75332S3, HUF75332S3S S E M I C O N D U C T O R 52A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs March 1998 Features Description • 52A, 55V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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75332S3
Abstract: 75332P3
Contextual Info: 75332G3, HUF75332P3, HUF75332S3, HUF75332S3S Semiconductor Data Sheet 52A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs . ? These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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