TO24 Search Results

11N60CFD

Abstract: SPW11N60CFD 11N60C
Contextual Info: SPW11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability

infineon 6r045

Abstract: mosfet 6r045 IPW60R045CS 6r045 infineon 6r045 PG-TO-247-3 Q67045A5061 JESD22 PG-TO247-3 IPW60R045
Contextual Info: IPW60R045CS CoolMOS TM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

Contextual Info: STW69N65M5-4 N-channel 650 V, 0.037 Ω typ., 58 A, MDmesh V Power MOSFET in a TO247-4 package Datasheet - production data Features Order code VDS @ TJmax RDS on max ID STW69N65M5-4 710 V 0.045 Ω 58 A • Higher VDS rating 2 • Higher dv/dt capability

am1017

Contextual Info: STW57N65M5-4 N-channel 650 V, 0.056 Ω typ., 42 A, MDmesh V Power MOSFET in a TO247-4 package Datasheet − production data Features Order code VDS @ TJmax RDS on max ID STW57N65M5-4 710 V 0.063 Ω 42 A • Higher VDS rating 1 2 • Higher dv/dt capability

STW55NE10

Contextual Info: STW55NE10 N - CHANNEL 100V - 0.021Ω - 55A - TO247 STripFET POWER MOSFET TYPE STW55NE10 • ■ ■ ■ ■ VDSS R DS on ID 100 V <0.027 Ω 55 A TYPICAL RDS(on) = 0.021 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC

f1010n

Abstract: A 0412 MHP100101F
Contextual Info: 100W TO247 High Power Resistors MHP 100 • · · · · · · Non-inductive, high power resistor. Thermally enhanced Industry standard TO-247 package. Extremely Low thermal resistance, 1.3 °C/W resistor hot spot to metal tab. Complete thermal flow design available for easy

BUV48A

Abstract: TIP35CW failure report IGBT B505 BDW83C BU941ZP TIP142 TIP2955 TIP34C tip35
Contextual Info: PRODUCT/PROCESS CHANGE NOTIFICATION PCN APM-PWR/07/2362 Notification Date 03/19/2007 Package change from TO218 to TO247 for Power Bipolar products PWR - PWR BIP/ IGBT/ RF 1/14 PCN APM-PWR/07/2362 - Notification Date 03/19/2007 Table 1. Change Identification

MBR4015LWT

Abstract: MBR4015LWTG
Contextual Info: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

G60T120

Abstract: IGW60T120 IGBT 1200V 60A PG-TO-247-3
Contextual Info: IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • C Best in class TO247 Short circuit withstand time – 10 s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 1200 V applications

11n60cfd

Abstract: SPW11N60CFD 11N6
Contextual Info: SPW11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability

20n60s5* values

Abstract: 20n60s5 SPW20N60S5 equivalent 20N60S5 TO247 SPW20N60S5
Contextual Info: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

P12NK80

Abstract: VDD400 w12nk80z B12NK80Z stw12nk80z p12nk80z W12NK80
Contextual Info: STB12NK80Z STP12NK80Z - STW12NK80Z N-CHANNEL 800V - 0.65Ω - 10.5A - TO220-D²PAK-TO247 Zener-Protected SuperMESH MOSFET General features VDSS Type STB12NK80Z STP12NK80Z STW12NK80Z Package RDS on 800 V <0.75 Ω 800 V <0.75 Ω 800 V <0.75 Ω ID Pw 10.5 A

BFC42

Contextual Info: SEME BFC42 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69

11N60S5

Abstract: SPW11N60S5
Contextual Info: SPW11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

SML5020BN

Abstract: W112A
Contextual Info: SEME SML5020BN LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC

47N60

Abstract: 47N60S5 SPW47N60S5 P-TO247
Contextual Info: SPW47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated

6r045

Abstract: mosfet 6r045 IPW60R045Cp 6R045 infineon 6r045 IPW60R045CP SP000067149 JESD22 PG-TO-247-3 D44 MARKING CODE
Contextual Info: IPW60R045CP CoolMOS Power Transistor Product Summary Features V DS @ Tjmax • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

Contextual Info: TO -24 7 BYC30W-600P Hyperfast power diode 10 February 2014 Product data sheet 1. General description Hyperfast power diode in a SOD142 2-lead TO247 plastic package. 2. Features and benefits • • • • Low leakage current Low thermal resistance Low reverse recovery current

Contextual Info: TrenchStop IKW40T120 Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C •           Best in class TO247 Short circuit withstand time – 10s

transistor 20N60s5

Abstract: SPW20N60S5
Contextual Info: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

mosfet 6r045

Abstract: IPW60R045Cp 6R045 230 AC to 5V dc smps sd 431 transistor infineon 6r045 IPW60R045CP SP000067149 6R045
Contextual Info: IPW60R045CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

20n60cfd

Contextual Info: SPW20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability

11n60cfd

Contextual Info: SPW11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability

Contextual Info: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low