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Samtec Inc


Samtec Inc FW-02-03-L-D-240-089
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	FW-02-03-L-D-240-089					1 - 10 - 100 $1.21 1000 $0.73 10000 $0.48	Buy Now
Samtec Inc FW-02-03-H-D-240-089
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	FW-02-03-H-D-240-089					1 - 10 - 100 $1.84 1000 $1.30 10000 $0.88	Buy Now
Samtec Inc FW-02-03-F-D-240-089
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	FW-02-03-F-D-240-089					1 - 10 - 100 $1.04 1000 $0.63 10000 $0.42	Buy Now
Samtec Inc FW-02-03-LM-D-240-089
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	FW-02-03-LM-D-240-089					1 - 10 - 100 $1.21 1000 $0.73 10000 $0.48	Buy Now
Samtec Inc FW-02-03-G-D-240-089
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	FW-02-03-G-D-240-089					1 - 10 - 100 $1.35 1000 $0.77 10000 $0.53	Buy Now

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240089 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
diode C531 Abstract: c531 diode C531 ultrarf 10UF MMBTA64 MRF21060 UPF21060 f217 Contextual Info: UPF21060 60W, 2.2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.1 to 2.2 GHz. Rated with a minimum output power of 60W, it is ideal for W-CDMA, CDMA, TDMA, GSM, and Multi-Carrier	Original	upf21060 mrf21060 diode c531 c531 diode +5c531 ultrarf 10uf mmbta64 f217	PDF
ultrarf Abstract: 10UF MMBTA64 MRF21090 UPF21090 irl 2807 300GP 82-5022 Contextual Info: UPF21090 90W, 2.2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.1 to 2.2 GHz. Ideal for W-CDMA, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in Class A or AB operation.	Original	upf21090 mrf21090 ultrarf 10uf +4mmbta64 irl 2807 300gp 82-5022	PDF
Contextual Info: TOSHIBA TC74LVX32F/FN/FS Quad 2-Input OR Gate The TC74LVX32 is a high speed CMOS 2-INPUT OR GATE fabricated with silicon gate C2MOS technology. Designed for use in 3.3 Volt systems, it achieves high speed operation while maintaining the CMOS tow power dis	OCR Scan	tc74lvx32f/fn/fs tc74lvx32	PDF
C17-C19 Abstract: ultrarf 10UF MMBTA64 MRF18060 UPF18060 240089 Contextual Info: UPF18060 60W, 1.88GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications in the frequency band 1805 to 1880 GHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers	Original	upf18060 88ghz mrf18060 c17-c19 +4ultrarf 10uf mmbta64 240089	PDF
26LC16 Abstract: ultrarf 10UF MMBTA64 UPF18090 10-026L MRF18090 Contextual Info: UPF18090 90W, 1.88GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications in the frequency band 1.805 to 1.880 GHz. Rated with a minimum output power of 90W, it is ideal for CDMA, TDMA, GSM, EDGE and Multi-Carrier Power	Original	upf18090 88ghz mrf18090 26lc16 +4ultrarf 10uf mmbta64 10-026l	PDF
Contextual Info: CombiTemp Temperature Measuring System Housing DIN-B DIN-B Standard or Ex ia safety Ex n safety Ø80 mm stainless steel Transmitters FlexTop 2201 FlexTop 2211 FlexTop 2221 FlexTop 2231 Displays The process connections shown are examples. FlexView BattTemp	Original	5850-008-uk/2008-04-25/rev	PDF