MRF18090 Search Results

MRF18090 Datasheets (19)

Filter by Manufacturer

Select Manufacturer

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MRF18090A	Freescale Semiconductor	MRF18090AR3 1.80-1.88 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET	Original	PDF	561.96KB	8
MRF18090A	Freescale Semiconductor	RF Power Field Effect Transistor	Original	PDF	389.83KB	8
MRF18090A	Motorola	LATERAL N-CHANNEL RF POWER MOSFETS	Original	PDF	176.29KB	8
MRF18090A	Motorola	MRF18090A, MRF18090AS 1.80-1.88 GHz, 90 W, 26 V Lateral N-Channel Broadband RF Power MOSFET	Original	PDF	104.08KB	8
MRF18090A	Motorola	RF Power Field Effect Transistors	Scan	PDF	325.08KB	7
MRF18090AR3	Freescale Semiconductor	RF Power Field Effect Transistor	Original	PDF	389.82KB	8
MRF18090AR3	Freescale Semiconductor	90W GSM 1.8GHZ NI880	Original	PDF	378.13KB	9
MRF18090AR3	Freescale Semiconductor	1.80-1.88 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET	Original	PDF	561.96KB	8
MRF18090AS	Freescale Semiconductor	1.80-1.88 GHz, 90 W, 26 V, LATERAL N-CHANNEL, BROADBAND RF POWER MOSFETS	Original	PDF	104.08KB	8
MRF18090AS	Motorola	RF Power Field Effect Transistor	Original	PDF	408.96KB	8
MRF18090AS	Motorola	1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS	Original	PDF	176.28KB	8
MRF18090AS	Motorola	RF Power Field Effect Transistors	Scan	PDF	325.08KB	7
MRF18090B	Freescale Semiconductor	MRF18090BR3, MRF18090BSR3 1.90-1.99 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs	Original	PDF	563.47KB	8
MRF18090B	Motorola	MRF18090B, MRF18090BS 1.90-1.99 GHz, 90 W, 26 V Lateral N-Channel Broadband RF Power MOSFET	Original	PDF	104.02KB	8

MRF18090B	Motorola	RF Power Field Effect Transistors	Scan	PDF	322.47KB	7
MRF18090BR3	Freescale Semiconductor	1.90-1.99 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET	Original	PDF	563.47KB	8
MRF18090BS	Motorola	1.90-1.99 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs	Original	PDF	406.02KB	8
MRF18090BS	Motorola	RF Power Field Effect Transistors	Scan	PDF	322.47KB	7
MRF18090BSR3	Freescale Semiconductor	1.90-1.99 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET	Original	PDF	563.47KB	8

MRF18090 Price and Stock

Filter by Manufacturer

Motorola Semiconductor Products


Motorola Semiconductor Products MRF18090B RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, L BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	MRF18090B		1			1 $52.00 10 $52.00 100 $52.00 1000 $52.00 10000 $52.00	Buy Now

MRF18090 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
smd transistor marking z8 Contextual Info: Freescale Semiconductor Technical Data MRF18090B Rev. 6, 12/2004 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	mrf18090b mrf18090br3 mrf18090bsr3 smd transistor marking z8	PDF
TLX8-0300 Abstract: transistor J585 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 8, 10/2008 RF Power Field Effect Transistor MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	mrf18090a mrf18090ar3 tlx8-0300 transistor j585	PDF
smd transistor marking z8 Contextual Info: Freescale Semiconductor Technical Data MRF18090B Rev. 6, 12/2004 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	mrf18090b mrf18090br3 mrf18090bsr3 smd transistor marking z8	PDF
smd wb1 Abstract: smd diode wb1 smd wb2 wb1 sot package sot-23 465B BC847 GSM1800 LP2951 MRF18090A MRF18090AS Contextual Info: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up	Original	mrf18090a/d mrf18090a mrf18090as smd wb1 +7smd diode wb1 smd wb2 wb1 sot package sot-23 465b bc847 gsm1800 lp2951	PDF
smd wb1 transistor Abstract: smd transistor wb1 smd wb1 smd wb2 sot-23 wb2 wb1 sot-23 WB1 SOT23 J585 mosfet smd transistor M3 sot23 J585 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	mrf18090a mrf18090as smd wb1 transistor smd transistor wb1 +8smd wb1 smd wb2 sot-23 wb2 wb1 sot-23 wb1 sot23 j585 mosfet smd transistor m3 sot23 j585	PDF
smd transistor M3 sot23 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	mrf18090b mrf18090bs smd transistor m3 sot23	PDF
Contextual Info: Document Number: MRF18090B Rev. 7, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	mrf18090b mrf18090br3 mrf18090bsr3	PDF
PHILIPS capacitors 0.1 mf Abstract: Transistor t 2 smd motorola Contextual Info: Freescale Semiconductor Technical Data MRF18090A Rev. 6, 12/2004 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	mrf18090a mrf18090ar3 philips capacitors 0.1 mf transistor t 2 smd motorola	PDF
smd mosfet z8 Abstract: smd z5 transistor 465B BC847 GSM1900 LP2951 MRF18090B MRF18090BS irl 1310 SMD TRANSISTORS AAA Contextual Info: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from	Original	mrf18090b/d mrf18090b mrf18090bs smd mosfet z8 +7smd z5 transistor 465b bc847 gsm1900 lp2951 irl 1310 smd transistors aaa	PDF
TLX8-0300 Abstract: "capacitor philips" transistor motorola 114-8 motorola s 114-8 smd mosfet z8 smd z5 transistor transistor motorola 351 465B GSM1800 MRF18090A Contextual Info: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies	Original	mrf18090a/d mrf18090a mrf18090as tlx8-0300 +8capacitor philips transistor motorola 114-8 motorola s 114-8 smd mosfet z8 smd z5 transistor transistor motorola 351 465b gsm1800	PDF
transistor smd z9 Contextual Info: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from	Original	mrf18090b/d mrf18090b mrf18090bs transistor smd z9	PDF
smd transistor marking j8 Abstract: smd transistor marking j6 transistor J585 smd transistor marking mf transistor smd z3 smd transistor marking z8 Contextual Info: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	mrf18090br3 mrf18090bsr3 smd transistor marking j8 smd transistor marking j6 +4transistor j585 smd transistor marking mf transistor smd z3 smd transistor marking z8	PDF
smd transistor marking j6 Abstract: SMD Transistor z6 C5 MARKING TRANSISTOR transistor 6 pin SMD Z2 marking Z4 smd z5 transistor transistor smd z9 Z9 TRANSISTOR SMD 465B BC847 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from	Original	mrf18090b mrf18090br3 mrf18090bsr3 smd transistor marking j6 +9smd transistor z6 c5 marking transistor transistor 6 pin smd z2 marking z4 smd z5 transistor transistor smd z9 z9 transistor smd 465b bc847	PDF
transistor J585 Abstract: transistor smd z8 Z9 TRANSISTOR SMD transistor SMD Z2 BC847 smd Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	mrf18090b mrf18090bs transistor j585 transistor smd z8 +3z9 transistor smd transistor smd z2 bc847 smd	PDF

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 8, 10/2008 RF Power Field Effect Transistor MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	mrf18090a mrf18090ar3	PDF
H6050 Abstract: Z9 TRANSISTOR SMD BC847 SOT-23 PACKAGE 0805 Contextual Info: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up	Original	mrf18090b/d mrf18090b mrf18090bs h6050 +2z9 transistor smd bc847 sot-23 package 0805	PDF
smd transistor wb1 Abstract: wb1 sot package sot-23 Contextual Info: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up	Original	mrf18090a/d mrf18090a mrf18090as smd transistor wb1 +1wb1 sot package sot-23	PDF
smd transistor wb1 Abstract: smd wb2 wb1 sot-23 smd wb1 sot-23 wb2 WB1 SOT23 smd wb1 transistor wb1 sot package sot-23 Z3 SMD sot 23 motorola s 114-8 Contextual Info: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from	Original	mrf18090a/d mrf18090a mrf18090as smd transistor wb1 +9smd wb2 wb1 sot-23 smd wb1 sot-23 wb2 wb1 sot23 smd wb1 transistor wb1 sot package sot-23 z3 smd sot 23 motorola s 114-8	PDF
on 5297 transistor Abstract: transistor c 5299 100B6R8CW 293D106X9035D 100B3R3BW capacitor philips motorola s 114-8 100B120GW 100B100GW "capacitor philips" Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	mrf18090a mrf18090as on 5297 transistor transistor c 5299 +7100b6r8cw 293d106x9035d 100b3r3bw capacitor philips motorola s 114-8 100b120gw 100b100gw	PDF
smd transistor marking j2 Abstract: Transistor z1 Contextual Info: Freescale Semiconductor Technical Data MRF18090A Rev. 6, 12/2004 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	mrf18090a mrf18090ar3 smd transistor marking j2 transistor z1	PDF
transistor motorola 114-8 Abstract: Transistor z1 transistor motorola 351 motorola s 114-8 465B GSM1800 MRF18090A MRF18090AR3 motorola 1815 motorola 114-8 Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF18090AR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for GSM and GSM EDGE base station applications with frequencies	Original	mrf18090a/d mrf18090ar3 transistor motorola 114-8 transistor z1 +7transistor motorola 351 motorola s 114-8 465b gsm1800 mrf18090a motorola 1815 motorola 114-8	PDF
smd transistor marking j6 Abstract: transistor 6 pin SMD Z2 smd transistor marking j8 SMD Transistor z6 transistor J585 transistor smd z9 C5 MARKING TRANSISTOR TRANSISTOR Z4 SMD transistor 2x sot 23 TRANSISTOR SMD 2X K Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18090AR3 LIFETIME BUY Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	mrf18090ar3 mrf18090a smd transistor marking j6 transistor 6 pin smd z2 +8smd transistor marking j8 smd transistor z6 transistor j585 transistor smd z9 c5 marking transistor transistor z4 smd transistor 2x sot 23 transistor smd 2x k	PDF
SMD Transistor z6 Abstract: 465B BC847 GSM1900 LP2951 MRF18090B MRF18090BS Contextual Info: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up	Original	mrf18090b/d mrf18090b mrf18090bs smd transistor z6 +4465b bc847 gsm1900 lp2951	PDF
465B Abstract: BC847 GSM1900 LP2951 MRF18090B MRF18090BR3 MRF18090BSR3 smd transistor marking j8 smd transistor marking z8 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	mrf18090b mrf18090br3 mrf18090bsr3 465b +5bc847 gsm1900 lp2951 smd transistor marking j8 smd transistor marking z8	PDF

MRF18090 Search Results

MRF18090 Datasheets (19)

MRF18090 Price and Stock

Motorola Semiconductor Products MRF18090B

MRF18090 Datasheets Context Search

smd transistor marking z8

TLX8-0300

smd transistor marking z8

smd wb1

smd wb1 transistor

smd transistor M3 sot23

PHILIPS capacitors 0.1 mf

smd mosfet z8

TLX8-0300

transistor smd z9

smd transistor marking j8

smd transistor marking j6

transistor J585

H6050

smd transistor wb1

smd transistor wb1

on 5297 transistor

smd transistor marking j2

transistor motorola 114-8

smd transistor marking j6

SMD Transistor z6

465B