24 VOLTS SMPS Search Results

AO4480

Contextual Info: AO4480 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4480 uses advanced trench technology to provide excellent RDS ON , low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications.

Contextual Info: AO4716 30V N-Channel MOSFET SRFET General Description Product Summary SRFET TM AO4716 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and

AO4712

Contextual Info: AO4712 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AO4712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

DA222M

Abstract: kc 3229 united chemi-con 616 821 2.5 81DA821M400MG2D 81DA1 81DA 575 L 80
Contextual Info: 81DA Series UNITED í CHEMI-CON • Snap Mount ■ +105°C General Purpose ■ High Ripple Current ■ High Capacitance The 81 DA series has a high ripple current capability giving the advantage to SMPS input filter circuits. Along with high ripple currents and low ESR's, the 81 DA operates in a temperature range from

SMPS 30v 20a

Contextual Info: AO4714 30V N-Channel MOSFET SRFET General Description TM Product Summary TM SRFET AO4714 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

AO4456

Abstract: 24V 20A SMPS SMPS 24V 24v 5a smps SMPS 30v 20a
Contextual Info: AO4456 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

ao4718

Contextual Info: AO4718 30V N-Channel MOSFET SRFET General Description TM Features TM SRFET The AO4718 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and

AOD496

Contextual Info: AOD496 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD496 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product

AO4708

Contextual Info: AO4708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

AOL1428L

Abstract: AOL1428
Contextual Info: AOL1428 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1428 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product

AON7402

Contextual Info: AON7402 30V N-Channel MOSFET General Description Product Summary The AON7402 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. ID (at VGS=10V)

AON7400A

Contextual Info: AON7400A 30V N-Channel MOSFET General Description Product Summary The AON7400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is suitable for use as a high side switch in SMPS and general purpose

AO4456

Contextual Info: AO4456 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

AON6414AL

Abstract: AON6414A
Contextual Info: AON6414AL 30V N-Channel MOSFET General Description Product Summary The AON6414AL uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. ID (at VGS=10V)

T49470

Abstract: ht presidio Presidio CERAMIC CAP BQ15-4 Presidio Components BR186 Marking J1N S208X7R br126 EIA-469
Contextual Info: SMPS STACKED CAPACITORS CATALOG 1001 TABLE OF CONTENTS MIL-PRF-49470 SPECIFICATION .1 DSCC DRAWING 88011 NPO STACKED

32P05T

Contextual Info: IXTA32P05T IXTP32P05T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 50V - 32A Ω 39mΩ P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 50 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

SOT-227 lead frame

Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
Contextual Info: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic

600TD

Contextual Info: GenX3TM 600V IGBTs IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 VCES = 600V IC110 = 48A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBTs for up to 5kHz switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXGH24N60C4D1

Abstract: 24N60C4D1 G24N60
Contextual Info: High-Gain IGBT w/ Diode IXGH24N60C4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM

IXGH12N120A3

Abstract: IXGH12N120 IXGP12N120A3 G12N120
Contextual Info: IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 GenX3TM 1200V IGBTs High Surge Current VCES = 1200V = 12A IC90 VCE sat ≤ 3.0V Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-263 AA (IXGA) G S D (Tab) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: GenX3TM 1200V IGBTs VCES = 1200V IC90 = 12A VCE sat ≤ 3.0V IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 High Surge Current Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-263 AA (IXGA) G S D (Tab) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

G20N120

Abstract: IXGA20N120A3 IXGP20N120A3 IXGH20N120A3
Contextual Info: GenX3TM 1200V IGBTs VCES = 1200V IC110 = 20A VCE sat ≤ 2.5V IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: Preliminary Technical Information High Voltage IGBTs VCES = IC25 = VCE sat ≤ tfi(typ) = IXGH24N170A IXGT24N170A 1700V 24A 6.0V 40ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: IXGH48N60A3D1 GenX3TM 600V IGBT w/Diode VCES = 600V IC110 = 48A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V