24 TRANSISTOR SOT23 Search Results

MMFTN123

Contextual Info: MMFTN123 MMFTN123 N-Channel Logic Level Enhancement Mode Field Effect Transistor N-Kanal Logikpegel Feldeffekt-Transistor – Anreicherungstyp N N Version 2011-01-24 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1

BSR18A

Abstract: BSR17A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR18A PNP switching transistor Product specification Supersedes data of 1997 May 28 2004 Mar 24 Philips Semiconductors Product specification PNP switching transistor BSR18A FEATURES PINNING • Low current max. 100 mA

BSR17A

Abstract: BSR18A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR17A NPN switching transistor Product specification Supersedes data of 1997 Jun 02 2004 Mar 24 Philips Semiconductors Product specification NPN switching transistor BSR17A FEATURES PINNING • Low current max. 100 mA

MMFTN138

Abstract: DSS50V
Contextual Info: MMFTN138 MMFTN138 N-Channel Logic Level Enhancement Mode Field Effect Transistor N-Kanal Logikpegel Feldeffekt-Transistor - Anreicherungstyp N N Version 2011-01-24 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1

qm marking code sot-23

Abstract: 8725 maxim transistor 1039 maxim 8725 JESD22-A102 JAN2N3700 JESD22-A101 JESD22-A103 JESD22-A113 sot-23 npn marking code cr
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 24 October, 2003. INCH-POUND MIL-PRF-19500/694A 24 August 2003 SUPERSEDING MIL-PRF-19500/694 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN,

free transistor equivalent book

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS4160T 60 V; 1 A NPN low VCEsat BISS transistor Product specification 2003 Jun 24 Philips Semiconductors Product specification 60 V; 1 A NPN low VCEsat (BISS) transistor PBSS4160T FEATURES QUICK REFERENCE DATA

MARKING ZT SOT23 TRANSISTOR

Abstract: PBSS4140T PBSS5140T free transistor and ic equivalent data PBSS4140
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4140T 40 V, 1A NPN low VCEsat BISS transistor Product specification Supersedes data of 2005 Feb 14 2005 Feb 24 Philips Semiconductors Product specification 40 V, 1A NPN low VCEsat (BISS) transistor PBSS4140T QUICK REFERENCE DATA

PBSS4160T

Abstract: BCP55 BCX55 PBSS5160T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS4160T 60 V, 1 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Jun 24 2004 May 12 Philips Semiconductors Product specification 60 V, 1 A NPN low VCEsat (BISS) transistor

IF3601

Abstract: 2N6449 2N6450 IF9030 interfet B-28 IF140 IF140A IF142 IF1320
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-24 B-24 01/99 2N6449, 2N6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ High Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current

LDO sot23

Abstract: APP1861 CMPT2222A MAX1735 MAX1735EUK25 RMC18-18RJB transistor sot23-3 RMC181
Contextual Info: Maxim > App Notes > POWER-SUPPLY CIRCUITS Keywords: pass transistor, linear regulator, LDO, increase LDO current, more load current Jan 24, 2003 APPLICATION NOTE 1861 Pass Transistor Boosts Current from Negative Linear Regulator Abstract: The addition of a pass transistor to the circuit of Figure 1 allows the linear regulator LDO to deliver

MMFTN20

Contextual Info: MMFTN20 MMFTN20 N-Channel Enhancement Vertical D-MOS Transistor N-Kanal Vertikal D-MOS Transistor - Anreicherungstyp N N Version 2010-09-24 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1 2.5 max 3 Type Code

MARKING ZT SOT23 TRANSISTOR

Abstract: PBSS4140T PBSS5140T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4140T 40 V, 1A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2005 Feb 14 2005 Feb 24 NXP Semiconductors Product data sheet 40 V, 1A NPN low VCEsat (BISS) transistor PBSS4140T FEATURES QUICK REFERENCE DATA

Contextual Info: DISCRETE SEMICONDUCTORS DAT PBSS4140T 40 V, 1A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2005 Feb 14 2005 Feb 24 NXP Semiconductors Product data sheet 40 V, 1A NPN low VCEsat (BISS) transistor PBSS4140T FEATURES QUICK REFERENCE DATA

Contextual Info: MMFTP84 MMFTP84 P-Channel Enhancement Mode Vertical D-MOS Transistor P-Kanal Vertikal D-MOS Transistor - Anreicherungstyp P P Version 2011-01-24 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1 2.5 max 3 Type

BCP55

Abstract: BCX55 PBSS4160T PBSS5160T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS4160T 60 V, 1 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Jun 24 2004 May 12 NXP Semiconductors Product data sheet 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160T

2N7002 NXP MARKING

Abstract: ON5520 fet SMD CODE PACKAGE SOT23 2n7002 nxp FET marking codes smd diode 2n7002 marking code 2N7002 smd TRANSISTOR code marking 05 sot23
Contextual Info: ON5520 N-channel TrenchMOS FET Rev. 01 — 24 March 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.

PMV40UN2

Contextual Info: SO T2 3 PMV40UN2 30 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T2 3 PMV30UN2 20 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

SC-101

Abstract: PMZ760SN
Contextual Info: PMZ760SN µTrenchMOS standard level FET Rev. 01 — 24 February 2003 M3D883 Objective data BOTTOM VIEW 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability:

MSB003

Contextual Info: Product specification PMV56XN µTrenchMOS extremely low level FET Rev. 02 — 24 June 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features

Contextual Info: PMV56XN µTrenchMOS extremely low level FET Rev. 02 — 24 June 2004 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • TrenchMOS™ technology

PMV56XN

Abstract: SOT23 FET MSB003
Contextual Info: PMV56XN µTrenchMOS extremely low level FET Rev. 02 — 24 June 2004 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • TrenchMOS™ technology

TRANSISTOR BC 448 smd

Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
Contextual Info: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors

Contextual Info: C E 24 01 P-Channel Enhancement Mode Field Effect Transistor FEATURES ● ● ● ● PRODUCT SUMMARY Super high dense cell design for low RDS ON Rugged and reliable Simple drive requirement SOT-23 package VDSS ID -20V RDS(ON) (mΩ) Typ 95@ VGS=-4.5V -3.6A