24 TRANSISTOR SOT23 Search Results

MMFTN123

Contextual Info: MMFTN123 MMFTN123 N-Channel Logic Level Enhancement Mode Field Effect Transistor N-Kanal Logikpegel Feldeffekt-Transistor – Anreicherungstyp N N Version 2011-01-24 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1

BSR18A

Abstract: BSR17A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR18A PNP switching transistor Product specification Supersedes data of 1997 May 28 2004 Mar 24 Philips Semiconductors Product specification PNP switching transistor BSR18A FEATURES PINNING • Low current max. 100 mA

MARKING ZT SOT23 TRANSISTOR

Abstract: PBSS4140T PBSS5140T free transistor and ic equivalent data PBSS4140
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4140T 40 V, 1A NPN low VCEsat BISS transistor Product specification Supersedes data of 2005 Feb 14 2005 Feb 24 Philips Semiconductors Product specification 40 V, 1A NPN low VCEsat (BISS) transistor PBSS4140T QUICK REFERENCE DATA

MARKING ZT SOT23 TRANSISTOR

Abstract: PBSS4140T PBSS5140T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4140T 40 V, 1A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2005 Feb 14 2005 Feb 24 NXP Semiconductors Product data sheet 40 V, 1A NPN low VCEsat (BISS) transistor PBSS4140T FEATURES QUICK REFERENCE DATA

Contextual Info: DISCRETE SEMICONDUCTORS DAT PBSS4140T 40 V, 1A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2005 Feb 14 2005 Feb 24 NXP Semiconductors Product data sheet 40 V, 1A NPN low VCEsat (BISS) transistor PBSS4140T FEATURES QUICK REFERENCE DATA

BCP55

Abstract: BCX55 PBSS4160T PBSS5160T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS4160T 60 V, 1 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Jun 24 2004 May 12 NXP Semiconductors Product data sheet 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160T

2N7002 NXP MARKING

Abstract: ON5520 fet SMD CODE PACKAGE SOT23 2n7002 nxp FET marking codes smd diode 2n7002 marking code 2N7002 smd TRANSISTOR code marking 05 sot23
Contextual Info: ON5520 N-channel TrenchMOS FET Rev. 01 — 24 March 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.

PMV40UN2

Contextual Info: SO T2 3 PMV40UN2 30 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T2 3 PMV30UN2 20 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

SC-101

Abstract: PMZ760SN
Contextual Info: PMZ760SN µTrenchMOS standard level FET Rev. 01 — 24 February 2003 M3D883 Objective data BOTTOM VIEW 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability:

MSB003

Contextual Info: Product specification PMV56XN µTrenchMOS extremely low level FET Rev. 02 — 24 June 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features

Contextual Info: PMV56XN µTrenchMOS extremely low level FET Rev. 02 — 24 June 2004 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • TrenchMOS™ technology

PMV56XN

Abstract: SOT23 FET MSB003
Contextual Info: PMV56XN µTrenchMOS extremely low level FET Rev. 02 — 24 June 2004 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • TrenchMOS™ technology

3DD5023

Abstract: E16 10 pin bobbin transformers transformer e19 E20 CORE size E16 10 pin transformers E19 CORE TRANSFORMER E16 CORE TRANSFORMER 6 pin DS-1423 8 pin e25 transformer E16 CORE TRANSFORMER 9 pin
Contextual Info: Basic Design Guide Resonant Discontinuous Forward Converter Rapidly Implement Application Circuits in the Range 6 W to 40 W Using CamSemi’s RDFC Topology and Advanced Controller ICs C2472PX2 SOT23-6 C2473PX1 (SOP-8) CamSemi’s RDFC topology and advanced controller ICs deliver low cost replacements for linear power

transistor bf 44

Abstract: transistor D 1002 MAX985 MAX986 MAX989 MAX990 MAX993 MAX994 Transistor E11 transistor BF 37
Contextual Info: * MAX985 FAMILY MACROMODELS * -* FEATURES: * Rail-to-Rail Outputs * +2.5V to +5.5V Single-Supply Operation * Available in 8-Pin SO/5-PIN SOT23-5 MAX985/MAX986 * 8-Pin SO/uMAX (MAX989/MAX990) * 14-Pin SO (MAX993/MAX994) * * * PART NUMBER

BFT92

Abstract: "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM BFT92W marking L2 SOT23 6
Contextual Info: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT92W uses the same crystal as the SOT23 version, BFT92. • Gold metallization ensures

Contextual Info: STWD100 Watchdog timer circuit Datasheet - production data Applications • Telecommunications  Alarm systems  Industrial equipment  Networking SOT23-5 WY  Medical equipment SC70-5, SOT323-5 (W8)  UPS (uninterruptible power supply) Features

C2162PX2

Abstract: transistor WT4 wt4 transistor Cambridge capacitor capacitors transistor WT5 52 WT2 pnp transistor transistor WT3 E16 CORE TRANSFORMER 6 pin DPSN sot23-6 CAMSEMI
Contextual Info: Basic C2160 Design Guide Primary Side Sensing Controller Rapidly Implement Application Circuits Up to 8 W Using CamSemi’s PSS Topology and Advanced Controller ICs C2161PX2 SOT23-6 C2162PX2 (SOT23-6) CamSemi’s PSS topology and advanced controller ICs deliver low cost solutions for flyback power supply

BFR93 application note

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF

SOT23 W1P NXP

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT92 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF

SMD transistor MARKING CODE 312

Abstract: SOT23-4 MARKING U6 PBSS5160T BCP52 BCX52 PBSS4160T TRANSISTOR SMD MARKING CODE 04 MARKING CODE SMD IC NXP TRANSISTOR SMD MARKING CODE SOT23 pbss5160
Contextual Info: PBSS5160T 60 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

smd code marking ft sot23

Abstract: PBSS4032PT marking "td" sot23
Contextual Info: PBSS4032NT 30 V, 2.6 A NPN low VCEsat BISS transistor Rev. 01 — 18 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBSS4032PT 30 V, 2.4 A PNP low VCEsat BISS transistor Rev. 01 — 18 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

PBSS4032PT

Abstract: NXP TRANSISTOR SMD MARKING CODE SOT23
Contextual Info: PBSS4032PT 30 V, 2.4 A PNP low VCEsat BISS transistor Rev. 01 — 18 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.