24 DIP "TRANSISTOR ARRAY Search Results

transistor 3007A

Abstract: TRANSISTOR 3064 3007a HORIZONTAL DRIVER TRANSISTOR 3003a power transistor LB1233 DARLINGTON TRANSISTOR ARRAY LB1293 high voltage high current darlington array 18 lb1290
Contextual Info: Package Device Number of . Drawing Type . pins and : number configuration Description Features LB1217 DIP 16 3064 5-channel transistor array Five independent transistors LB1231 DIP 16 3064 7-channel high-voltage Darlington transistor array 50 V output voltage, 500 mA output current

NTE2054

Abstract: NTE2060
Contextual Info: INTEGRATED CIRCUITS - DISPLAY DRIVERS N TE2033 16-Lead DIP, See Diag. 249 Non-Inverting Transistor Array, Low Input Active N TE2050 LED 40-L ea d DIP, See Diag. 299 NTE2051 (LCD) 3 1/ 2—Digit Single Chip A/D Converter/Display Driver (CMOS) — OSC 1 OSC 2

transistor cross reference

Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC

ca3096

Abstract: CA3096AE 639 TRANSISTOR PNP CA3096E
Contextual Info: ui H A R R CA3096 I S S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • F ive-Independent Transistors The CA3096C, CA3Û96, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

ca3096

Abstract: CA3096AE
Contextual Info: HARRIS SEIUCOND SECTOR b lE D • 43G 2271 TTT ■ IHAS CA3096 HARRIS S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Description Applications • D 047D 13 The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

CA3081

Abstract: CA3082 CA3081 HARRIS CA3081F transistor Common collector configuration DR2000 equivalent
Contextual Info: HA RR IS SEMICON] S E CT OR HARRIS S E M I C O N D U C T O R 4 3 0 2 27 1 O G H T D G l 276 blE D HAS CA3081, CA3082 General Purpose High Current N-P-N Transistor Arrays March 1993 Features Description • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA)

ca3082f

Abstract: transistor Common collector configuration CA3081 CA3082 CA3081 HARRIS DR2000 applications of ca3081 CA3081F CA3081M CA3081M96
Contextual Info: S E M I C O N D U C T O R CA3081, CA3082 General Purpose High Current N-P-N Transistor Arrays May 1994 March 1993 Features Description • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon n-p-n transistors on a common monolithic substrate. The

40841

Abstract: 40841 MOSFET CA3096AE CA3096 CA3096A CA3096AM CA3096AM96 CA3096C CA3096CE CA3096E
Contextual Info: CA3096 S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • Five-Independent Transistors - Three N-P-N and - Two P-N-P The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

an5296

Abstract: Harris CA3018 Harris CA3146e CA3018 CA3046 CA3083 CA3146 CA3146A CA3183 CA3183A
Contextual Info: CA3146, CA3183 S E M I C O N D U C T O R High-Voltage Transistor Arrays March 1993 Features Description • • • • • The CA3146A, CA3146, CA3183A, and CA3183* are general purpose high voltage silicon n-p-n transistor arrays on a common monolithic substrate.

CA3046 equivalent

Abstract: ca3046 CA3045 Harris CA3046 "an5296 Application of the CA3018" CA3046 NPN matched transistors "Application of the CA3018" 619 TRANSISTOR D430S
Contextual Info: H A RR IS S E M I C O N D S E CT OR blE D • 43 D2 27 1 CA3045, CA3046 CSÌ H A R R IS S E M I C O N D U C T O R General Purpose N-P-N Transistor Arrays March 1993 Description Features • Q O H b 'H S 37b ■ HAS Two Matched Transistors: V BE Matched ±5mV; Input

an5296

Abstract: CA3083
Contextual Info: HA RR IS S E M I C O N D S E C T O R m U U blE ]> • 430 227 1 D G 4 7 D G 4 f A H A R R I S SEMICONDUCTOR Q Tfi? W H A S f if W \J General Purpose High Current N-P-N Transistor Array March 1993 Features Description • High lc. 100mA Max

CA3045

Abstract: CA3046 equivalent ca301b CA3046 Harris CA3046 CA3046M
Contextual Info: rp CA3045, CA3046 H A R R IS S E M I C O N D U C T O R General Purpose N-P-N Transistor Arrays M arch 1993 Features Description • Two Matched Transistors: V BE Matched ±5mV; Input Offset Current 2 iA Max at lc = 1mA T h e C A 3 0 4 5 and C A 3 0 4 6 each consist of five general

an5296

Abstract: AN5296 application note ca3083 CA3018 ca3083f Harris CA3018 CA3083M CA3083M96 application note an5296
Contextual Info: CA3083 S E M I C O N D U C T O R General Purpose High Current N-P-N Transistor Array March 1993 Features Description • High IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Max The CA3083 is a versatile array of five high current to

CA3103E

Abstract: ca3103 LVB 1.32 TA6103 CA3146E ca3183
Contextual Info: j j j CA3146, CA3183 HARRIS S E M I C O N D U C T O R High-Voltage Transistor Arrays March 1993 Features Description • Matched General Purpose Transistors The CA3146A, CA3146, CA31B3A, and CA3183* are general purpose high vollage silicon n-p-n transistor arrays

Harris CA3086

Abstract: an5296 CA3086 CA3086 APPLICATION NOTE lq43 AN5296 application note AN5296 Application of the CA3018 "an5296 Application of the CA3018" AN5296 Application note CA3018 1117h
Contextual Info: HARRI S S E H I C O N D S E C T O R blE D 5*1 HARRIS W H 43 DS5 71 □ □ l470Dô HiHAS *A 'iORfi S E M I C O N D U C T O R General Purpose N-P-N Transistor Array March 1993 Applications Description • Three Isolated Transistors and One Differentially Con­

CA3046 equivalent

Abstract: CA3046 CA3045 Harris CA3046 an5296 CA3018 CA3045F CA3046M CA3046M96
Contextual Info: CA3045, CA3046 S E M I C O N D U C T O R General Purpose N-P-N Transistor Arrays May 1994 March 1993 Features Description • Two Matched Transistors: VBE Matched ±5mV; Input Offset Current 2µA Max at IC = 1mA The CA3045 and CA3046 each consist of five general

Contextual Info: Special Functions RC4444 RC4444 4 x 4 x 2 Balanced Switching Crosspoint Array Mask Pattern Features • ■ ■ ■ ■ ■ Low bidirectional Ron High Ro ff Excellent matching of gates Low capacitance High rate firing Predictable holding current 2120 19 18

AN5296 Application of the CA3018 Integrated

Abstract: TA618 ca3083 relay ts4 harris transistors transistor 102 CA3183 transistor 9-t TA6183 DARLINGTON TRANSISTOR ARRAY
Contextual Info: HARRIS SEflICOND SECTOR blE D • 43DP271 004703S bSG H H A S CA3146, CA3183 33 H a r r i s S E M I C O N D U C T O R ■ W » W W High-Voltage Transistor Arrays March 1993 Features Description • Matched General Purpose Transistors • VBE Matched ±5mV Max

Harris CA3086

Abstract: an5296 CA3086 A 103 TRANSISTOR pinout ca3086m "Application of the CA3018" AN5296 application note CA3018 CA3086F CA3086M96
Contextual Info: CA3086 S E M I C O N D U C T O R General Purpose N-P-N Transistor Array March 1993 Applications Description • Three Isolated Transistors and One Differentially Connected Transistor Pair For Low-Power Applications from DC to 120 MHz The CA3086 consists of five general-purpose silicon n-p-n

transistor intercom circuit

Contextual Info: RC4444 RC4444 4 x 4 x 2 Balanced Switching Crosspoint Array Description Features The RC4444 is a monolithic dielectrically isolated crosspoint array arranged into a 4 x 4 x 2 matrix. The primary application is tor balanced switching of 6000 transmission lines. The ring and tip are selected by

3400 8k transistor

Contextual Info: GEC PLESSEY SEMICONDS 31E D 37bflSS2 OOllbfli *1 • P 1L E 8 8 E Y March 1990 SEMICONDUCTORS■ MF SERIES MACROCHIP HIGH FREQUENCY BIPOLAR ANALOG ARRAYS DESCRIPTION The M F Series is a family of 5 arrays designed for use in high speed analog applications.

2-wire intercom

Abstract: MC3416 7473 cmos 2050A C2 5.0 7473 PNP Monolithic Transistor Pair RC4444 RC4444D RC4444N 7473 pin diagram
Contextual Info: Special Functions RC4444 RC4444 4 x 4 x 2 Balanced Switching Crosspoint Array Features • ■ ■ ■ ■ ■ Low bidirectional Ron High Ro f f Excellent m atching o f gates Low capacitance H igh rate firing Predictable holding current Mask Pattern 21 20

HP-343A

Abstract: HP342A y12 t 646 HP343A CA3127E 1021-P1 cascode transistor array 150MIL CA3127 CA3127F
Contextual Info: CA3127 S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the

NTE916

Contextual Info: NTE916 Integrated Circuit High Current, NPN Transistor Array, Common Emitter Description: The NTE916 is a high current transistor array in a 16–Lead DIP type package consisting of seven silicon NPN transistors on a common monolithic substrate connected in a common–emitter configuration designed for directly driving seven–segment displays and light–emitting diodes LED displays. This device is also well suited for a variety of other drive applications including relay control