236AB Search Results

SMD TRANSISTOR MARKING w7

Contextual Info: PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

sot023

Contextual Info: PESD5V0S2BT Low capacitance bidirectional double ESD protection diode Rev. 03 — 9 February 2009 Product data sheet 1. Product profile 1.1 General description Low capacitance bidirectional double ElectroStatic Discharge ESD protection diode in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to

pesd1can4

Abstract: BV SMD SOT-023 PESD1CAN.215 PESD1CAN
Contextual Info: PESD1CAN CAN bus ESD protection diode Rev. 04 — 15 February 2008 Product data sheet 1. Product profile 1.1 General description PESD1CAN in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller Area Network (CAN) bus lines

Contextual Info: 2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

88347

Abstract: GSOT03C GSOT03 GSOT04 GSOT04C GSOT05 GSOT05C GSOT08 GSOT36C
Contextual Info: GSOT03 thru GSOT36C Vishay Semiconductors New Product formerly General Semiconductor Miniature Transient Voltage Suppressors Mounting Pad Layout TO-236AB SOT-23 0.031 (0.8) .122 (3.1) .110 (2.8) .016 (0.4) 0.035 (0.9) Top View 3 .056 (1.43) .052 (1.33) 0.079 (2.0)

Contextual Info: TP2105 Ü 3W Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / BVdgs -50V R d S ON P rod uct m arking fo r SOT-23: Order Number/Package ^G S (th ) (max) (max) TO-236AB* TO-92 Die 6Q -2.0 V TP2105K1 T P 21 05N 3 T P 21 05N D

N-Channel Depletion-Mode MOSFET high voltage

Abstract: SOT-23 MARKING mn DW-200 NDE SOT23 MARKING
Contextual Info: Supertex inc. LND250 N-Channel Depletion-Mode MOSFET Ordering Information BVdsx/ R d S ON Id s s Order Number / Package Product marking for SOT-23: b v dgx (max) (min) TO-236AB* NDE* 500V 1.0KÌÌ 1.0mA LND250K1 where * = 2-week alpha date code ’ Sam e as SOT-23. All units shipped on 3,000 piece carrier tape reels.

marking AGs sot-23

Abstract: marking AGs sot23 ags marking n1a marking n1a sot23 marking code VN2106
Contextual Info: VN2106 VN2110 S u p ertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S ON Product marking for SOT-23: (max) TO-92 TO-236AB* 60V 4.0Q VN2106N3 - VN2106ND 100V 4.0C1 — VN2110K1 VN2110ND BV dqs

Contextual Info: LP0801 h m . _ Low ThreshoJ P relim ina ry P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV DSS / BV DGS -16.5V D max (min) V GS(th) (max) 12.0Q -20 0m A -1.0V DS(ON) ^D(ON) Order Number / Package TO-236AB*

Contextual Info: Struthers-Dunn 407 East Smith Street - Suite B Timmonsville, SC 29161 US Phone: 843 346-4427 • Fax: (843) 346-4465 E-Mail: info@struthers-dunn.com • Web site:www.struthers-dunn.com Item # 236ABXP-020-115-125VDC, 236TD /237 Series - Time Delay Relays

marking Z2

Abstract: BZX84C5V1 BZX84C5V6
Contextual Info: 118 11 DÛ I MMm h m I ÀX \ SOT-23/TO-236AB 2 \/ M / ‘TM PZ’ ZENER D IO D E S ELECTRICAL CH ARACTERISTICS at A = 25 C Zener Voltage Leakage Current Zener Impedance Pinning Min. Nom. Max. @l ZT Max @VR Max. ZZT @ IZT Marking V (V) (V) (mA) (|JA) (V)

Contextual Info: Product specification PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 — 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

smd code marking LF sot23

Abstract: PESD36VS2UT
Contextual Info: PESD36VS2UT Low capacitance unidirectional double ESD protection diode Rev. 01 — 16 July 2009 Product data sheet 1. Product profile 1.1 General description Low capacitance unidirectional double ElectroStatic Discharge ESD protection diode in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package designed to

PMV40UN2

Contextual Info: SO T2 3 PMV40UN2 30 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: Product specification PMV16UN 20 V, 5.8 A N-channel Trench MOSFET Rev. 1 — 4 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Contextual Info: SO T2 3 PDTD1xxxT series 500 mA, 50 V NPN resistor-equipped transistors Rev. 1 — 15 May 2014 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

APD417

Abstract: GF2402
Contextual Info: GF2402 Vishay Semiconductor New Product N-Channel Enhancement-Mode MOSFET TO-236AB SOT-23 .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) 0.035 (0.9) Pin Configuration 0.037 (0.95) 0.037 (0.95) .045 (1.15) .037 (0.95) .007 (0.175)

PT3904

Contextual Info: SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T . = 25°C V BR CBO V (BR)CEO V(BR)EBO Max. @ vCB Device Type M arking (V) (V) (V) VCE(sat) DC C urrent Gain ^CBO h FE t>FE @ lc @ VCE Max. @ lc (nA) (V) Min. Max. (mA) (V) (V) (mA) 't Min. @ lc (MHz) (mA) ts'

1GM sot-23 transistor

Abstract: vishay TRANSISTOR Sot-23 MARKING CODE 20FEB02
Contextual Info: MMBTA06 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4) 0.079 (2.0) .045 (1.15) .037 (0.95)

88142

Contextual Info: BAT54 thru BAT54S Vishay Semiconductor Schottky Diodes Features TO-236AB SOT-23 • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.

BCW72

Contextual Info: BCW71 and BCW72 Small Signal Transistor NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View ct u d ro P New .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4) 0.079 (2.0) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) max. .004 (0.1) 2 0.037 (0.95)

2n4401 052

Abstract: transistor 2n4401 equivalent TS36
Contextual Info: MMBT4401 Small Signal Transistor NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) 0.037 (0.95) 0.037 (0.95) .007 (0.175) .005 (0.125) 0.079 (2.0) 0.035 (0.9) .045 (1.15) .037 (0.95) .037(0.95) .037(0.95)

Marking Code S72

Abstract: s72 sot 23 s72 mosfet 2N7002 S72 SOT-23
Contextual Info: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) G 0.037 (0.95) 0.037 (0.95) Pin Configuration .007 (0.175) .005 (0.125) max. .004 (0.1)