230NS Search Results

schematic diagram UPS 600 Power free

Abstract: schematic diagram UPS SanRex welding rectifier schematic 150a power supply dc welding circuit diagram dc welding machine circuit diagram NY Series sanrex Welding machine circuit diagram DCA150AA60
Contextual Info: SanRex Soft Recovery Diode DCA150AA50/60 IF AV = 150A, VRRM=600V trr=230ns, Softness=0.8 SanRex Soft Recovery Diode Module DCA150AA series is designed for applications requiring fast switching and soft recovery wave shape to reduce or eliminate the need for

LMV331

Abstract: MAX9030 MAX9031 na3x MAX903X
Contextual Info: SHATTERING COMPARATOR STANDARDS FOR SPEED, POWER, AND PACKAGING 230ns SPEC fast 600ns slow ns 0 100 200 300 400 500 600 230 600 ICC @ 5V 55µA 120µA Shutdown Current 1µA None Hysteresis 4mV None Price* $0.26 $0.26 700 SUPPLY CURRENT µA CONSUME 2.0x LESS CURRENT

No 42 G30N60C3D

Abstract: g30n60c3d HGTG30N60C3D LD26 RHRP3060 TA49051 TA49053 g30n60 G30N60C
Contextual Info: HGTG30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features • • • • • Package o 63A, 600V at TC = +25 C Typical Fall Time - 230ns at TJ = +150oC Short Circuit Rating Low Conduction Loss

se 145

Abstract: km41256 dram
Contextual Info: KM M48256/KM M48257 KM M58256/KM M58257 MEMORY MODULES 2 5 6 K x 8 Bit DRAM Memory Modules SIP/SIMM FEATURES GENERAL DESCRIPTION • 262,144 x 8-bit Organization • Performance range: • • • • • • • tRAC tcAc ÍRC KMM48256/7-12 120ns 60ns 230ns

cmkm

Abstract: OPA605 KS 2152 OPA80
Contextual Info: B U R R -B R O W N OPA6Q5 ] Wideband Fast-Settling OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • FAST SETTLING: 230nsec typ to 0.01% • PULSE AMPLIFIERS • WIDE BANDWIDTH: 200MHz Galn-Bandwidth Product • FAST D/A CONVERTERS • FAST SLEWING: 300V//usoc slow rate, Acl > 50

Contextual Info: BURR-BROW N [ O PA605 ] là Wideband Fast-Settling O P E R A TIO N A L AMPLIFIER FEATURES APPLICATIO NS • FA S T S E T T LIN G : 230nsec typ to 0.01% • P U LS E A M P LIFIER S • W IDE BANDW IDTH: 200MHz Gain-Bandwidth Product • FA S T D/A C O N VER TER S

Contextual Info: HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT August 1995 Features Packages JEDEC TO-220AB EMITTER COLLECTOR GATE • 24A, 600V at TC = +25oC • 600V Switching SOA Capability • Typical Fall Time - 230ns at TJ = +150oC

DC chopper

Abstract: DCA150AA60 SanRex
Contextual Info: SanRex ISOLATED DIODE MODULE SOFT RECOVERY DIODE DCA150AA50/60 VRRM=500/600V, IFAV =150A, trr=230ns, Softness=0.8 SanRex Soft Recovery Diode Module DCA150AA is designed for applications requiring fast switching and soft recovery wave shape to reduce or eliminate the need for snubber

Contextual Info: SHARP IS456 IS456 High Speed Response Type OPIC Ught Detector • Feature« ■ Outfne Dknenskxis U nit : m m 1. High speed response (tm : TYP.230ns) 2. Uses a pattern to allow for possible positional deviation of the semiconductor laser spot. 3. Compact, mini-flat package

IS456

Contextual Info: IS456 IS456 High Speed Response Type OPIC Light Detector • Features ■ Outline Dimensions 0.25 3 2 ■ Applications 3.81 ± 0.3 4 Detector center 5.0 ± 0.1 1 Unit : mm 2.5 ± 0.2 + 0.7 0.4 - 0.3 0.1 1. High speed response ( t PHL : TYP.230ns ) 2. Uses a pattern to allow for possible

B456 F 15

Abstract: B456 1S456 IS456 50n25
Contextual Info: 1S456 1S456 Huh Speed Res~se Type OPIC Light Detector • F-ras 1. High speed response b~~ : TYP.230ns 2. Uses a pattern to allow for possible positional deviation of the semiconductor laser spot. 3. Compact, mini-flat package ¤ouuina~ (Unit : mm) ■ Amti

g30n60c3d

Abstract: G30N60 transistor 40411 40411 transistor TA49051 TA49014 No 42 G30N60C3D TA49053 HGTG30N60C3D N-channel enhancement 200V 60A
Contextual Info: HGTG30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features • • • • • Package o 63A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC Short Circuit Rating

Contextual Info: OPA605 B U R R -B R O W N ; E 1 Wideband Fast-Settling OPERATIONAL AMPLIFIER APPLICATIONS FEATURES • FAST SETTLING: 230nsec typ to 0.01% • PULSE AM PLIFIERS • WIDE BANDWIDTH: 200MHz Giln-Bindwfdth Product • FAST D/A CONVERTERS • FAST SLEWING: 300V//iSOC law rite. A * > 50

km41256 dram

Abstract: KM-41256 km41256 KM41256A-10 KM41257A TRCD D
Contextual Info: NMOS DRAM KM41256A/KM41257A 2 56 K x 1 Bit Dynamic RAM with Page/Nibble Mode DESCRIPTION FEATURES • Performance range KM41256/7A-10 taac tcAC •rc 100ns 50ns 200ns KM41256/7A-12 120ns 60ns 230ns KM41256/7A-15 150ns 75ns 260ns Page Mode capability-KM41256A

KM41256

Abstract: 30 pin SIP dram memory 256KX8 SIMM
Contextual Info: KMM48256/KMM48257 KM M58256/KM M58257 MEMORY MODULES 2 5 6 K x 8 Bit DRAM Memory Modules SIP/SIMM GENERAL DESCRIPTION FEATURES • 262,144 x 8-bit Organization • Performance range: • • • • • • • tRAC tcAc Í rc K M M48256/7-12 120ns 60ns 230ns

Contextual Info: SMAH9P IS456 High Speed Response Type OPtC Light Detector IS456 IOutline Dimensions • Features U n it: mm 1. High speed response (tpm.: TYP.230ns ) 2. Uses a pattern to allow for possible positional deviation o f the semiconductor laser spot. D etector

g30n60c3

Abstract: TA49051 igbt g30n60c3 HGTG30N60C3 LD26 RHRP3060 740 MOSFET TRANSISTOR g30n60
Contextual Info: HGTG30N60C3 S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT January 1997 Features • • • • • Package 63A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC Short Circuit Rating

Contextual Info: SanRex ISOLATED DIODE MODULE SOFT RECOVERY DIODE DCA1 5 0 AA5 0 /6 0 VRRM=500/600V, IFAV =150A, trr=230ns, Softness=0.8 Sa nRe x Soft Recovery Diode Module DCA150AA is designed for applications requiring fast switching and soft recovery wave shape to reduce or eliminate the need for snubber

APT30F50B

Abstract: APT30F50S MIC4452
Contextual Info: APT30F50B APT30F50S 500V, 30A, 0.19Ω Max, trr ≤230ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

transistor 1354

Abstract: LT1354CN8 1354 LT1354 LT1354CS8 LT1357 LT1365
Contextual Info: LT1354 12MHz, 400V/µs Op Amp U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1354 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC performance. The LT1354 has much lower supply current, lower

TRANSISTOR D206

Abstract: 8512A transistor D209 LA 8512 TC51V8512
Contextual Info: TOSHIBA TC51V8512AF/AFT/ATR-12/15 PRELIMINARY SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1V 8512 A F is a 4M bit high speed C M O S pse udo static RAM organized as 5 2 4 ,2 8 8 w o rd s by 8 bits. The T C 51V 8512A F

of half subtractor ic

Abstract: AD369AM ic for half subtractor
Contextual Info: A N A LO G D EVICES Complete Programmable Gain 12-Bit Data Acquisition System AD369 FEATURES Includes: Programmable Gain Instrumentation Amplifier, Track and Hold Amplifier 12-Bit A/D Converter Digitally Controlled Gain 1,10,100, 500 50kHz Throughput Rate

memory samsung

Contextual Info: KMM411024/K M M 511024 KMM411025/KMM 511025 SAMSUNG Semiconductor Preliminary IM eg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION • 1M x 1 Organization • Performance range: The Samsung KMM411024, KMM411025, KMM511024 and KMM511025, are 1M x 1 dynamic RAM

p12n60c3

Abstract: 4040 FAIRCHILD P12N60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 RHRP1560 S12N60C3 TA49123
Contextual Info: HGTP12N60C3, HGT1S12N60C3S Data Sheet January 2000 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the