2306A Search Results

Contextual Info: Green Product S T S 2306A S amHop Microelectronics C orp. Apr. 27 2010 V er1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID S uper high dense cell design for low R DS ON . ( m Ω ) Max R DS (ON) R ugged and reliable.

din IEC 68

Abstract: 150a gto GTO 100A IXYS 40N60A D-68623 DWEP 17-12 DWEP DWlP 2580B L 7CG
Contextual Info: Contents Page Symbols and Definitions Nomenclature General Information Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types S-Series, SCSOA Capability, Fast Types

diode b3

Abstract: MII 75-12 A3 resistor catalog 30-12A6 grease diode 12A3 B3-12 75-12A3 200-12A4 10-06A6
Contextual Info: IGBT Modules B3 1999 IXYS All rights reserved B3 - 1 IGBT Modules Contents Package style VCES IC VCE sat Type Page TC = 25° C TC = 25° C max. V A V 1200 35 3.0 MWI 35-12A5 B3- 4 50 3.0 MWI 50-12A5 B3- 8 75 3.0 MWI 75-12A5 B3-12 75 3.0 MII 75-12A3 MID 75-12A3

2306a

Abstract: D26A sot-23 Marking DL WTC2306A
Contextual Info: 2306A N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN 5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS ON R DS(ON) <30mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement

OHMITE 4854

Abstract: ohmite 0454 ES150 OHMITE 0114A 1156d Ohmite 90J5RO 91j250 F409 S1K0 ohmite 1803
Contextual Info: OHM ITE Cross Reference Manufacturing Company Old No. New No. Old No. New No. Old No. New No. Old No. New No. Old No. New No. Old No. New No. Old No. New No. 0101 0102 0102A 0103 0103A 0104 0105 0106 0107 0108 0109 0110 0111 0112 0113 0113A 0114 0114A 0115

ac-0 inverter

Abstract: 2316a 2308A transistor BC 306A inv30 INV20 transistor p31 LC662304A
Contextual Info: CMOS LSI No. 5483 LC662304A, 2306A, 662308A, 662312A, 662316A Four-Bit Single-Chip Microcontrollers with 4, 6, 8, 12, and 16 KB of On-Chip ROM Preliminary Overview Package Dimensions The LC662304A, 2306A, LC662308A, LC662312A, and LC662316A are 4-bit CMOS microcontrollers that

L4204

Abstract: F423 4626a 0533 OHMITE RGS400 L0149 4808 F40J3R0 l0147 f422
Contextual Info: OHMITE Cross Reference Manufacturing Company Old to New Stock Part Numbers m Old No. 0328 0329 0330 0331 0332 0360 0360B 0361 0362 0362B 0363 0364 0364B 0365 0366 Ó367 0368 0369 0370 0371 0371B 0371C 0372 0373 0374 0375 0375B 0376 0377 0377B 0378 0379 0380

LC66308A

Abstract: P60 transistor 2308A zfha transistor BC 306A
Contextual Info: CMOS LSI LC66354C, 66356C, 66358C No. 5484 Four-Bit Single-Chip Microcontrollers with 4, 6, and 8 KB of On-Chip ROM Preliminary Overview The LC66354C, LC66356C, and LC66358C are 4-bit CMOS microcontrollers that integrate on a single chip all the functions required in a system controller, including

Mys 99 178

Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Contextual Info: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B

INVERTER 20kW

Abstract: Thermistor catalog ixys free catalog C620 diode
Contextual Info: MUBW 35-06 A6 Converter - Brake - Inverter Module CBI1 Rectifier Brake VRRM = 1200V IFAVM = 25 A IFSM = 370 A VCES = 600 V IC25 = 23 A VCE(sat) = 2.1 V Inverter VCES = 600 V IC25 = 38 A VCE(sat) = 2.1 V Features Input Rectifier Bridge D8 - D13 ● Symbol

2306a

Contextual Info: Spec. No. : C429N3 Issued Date : 2008.08.14 Revised Date :2009.02.09 Page No. : 1/ 7 CYStech Electronics Corp. 30V N-CHANNEL Enhancement Mode MOSFET 2306AN3 Features • VDS=30V RDS ON =35mΩ@VGS=4.5V, ID=5A RDS(ON)=50mΩ@VGS=2.5V, ID=2.6A • Low on-resistance

Contextual Info: 2306A N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN 5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS ON R DS(ON) <30mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement

Contextual Info: 2306A N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN 5 AMPERES * “G” Lead Pb -Free DRAIN SOURCE VOLTAGE 30 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <30mΩ@V GS =10V *Rugged and Reliable

p23 transistor

Abstract: tb6630 2308A LC66354C LC66356C LC66358A LC66358B LC66358C LC66599 LC66E308
Contextual Info: CMOS LSI LC66354C, 66356C, 66358C No. 5484 Four-Bit Single-Chip Microcontrollers with 4, 6, and 8 KB of On-Chip ROM Preliminary Overview The LC66354C, LC66356C, and LC66358C are 4-bit CMOS microcontrollers that integrate on a single chip all the functions required in a system controller, including