22NS Search Results

15ETH06SPBF

Contextual Info: PRELIMINARY Bulletin PD-21063 rev. B 11/06 15ETH06SPbF 15ETH06-1PbF Hyperfast Rectifier Features • • • • • • trr = 22ns typ. IF AV = 15Amp VR = 600V Hyperfastfast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature

S4 59A

Contextual Info: 3.3V 64-BIT FLOW-THRU ERROR DETECTION AND CORRECTION UNIT IDT49C3466 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64-bit wide Flow-thruEDC • Separate System and Memory Data Input/Output Buses • — Error Detect Time: 20ns — Error Correct Time: 22ns

MT43C8129A

Contextual Info: PRELIMINARY MT43C8128A/9A 128K x 8 TRIPLE-PORT DRAM |V|ICRON 128K x 8 DRAM WITH DUAL 256 x 8 SAMS FEATURES • • • • • • • • • • • • • Three asynchronous, independent, data access ports Fast access times: 70ns random, 22ns serial O peration and control compatible with 1 M eg VRAMs

mt43c4257adj7

Abstract: sama logic MT43C4257ADJ-7 MT43C4257A 4257A t994
Contextual Info: M T43C 4257A/8A 256KX4 TRIPLE-PORTDRAM MICRON I TRIPLE-PORT DRAM 256K X 4 DRAM WITH DUAL 512x4 SAMS FEATURES • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data-access ports Fast access times: 70ns random, 22ns serial Operation and control compatible with 1 M eg VRAM

MT43C8129A

Abstract: DRAM 256X8 8129A MT43C
Contextual Info: M T43C 8128A /9A 128K X 8 T R IP L E -P O R T DRAM M IC R O N I fMILOKUUCIOH. INI 128K X 8 DRAM WITH DUAL 256 X 8 SAMS TRIPLE-PORT DRAM FEATURES • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, d ata access ports Fast access times: 70ns random , 22ns serial

2SC4699K

Abstract: 2SC4700 T247 2SC4699 T106 T107 T146 T147 T246
Contextual Info: b ' 7 > i s Z £ /Transistors 2SC4699K/2SC4700 2SC 4699K 2SC 4700 Epitaxial Planer NPN Silicon Transistor M M Z 'f For High-Speed Switching • ÿH férl'ii 0/D im ensions Unit : mm 2SC4689K to ff= 2SC4700 2 .0 ± 0 ,Z 2 .9 ± 0 .2 22ns (Typ.) • I —0.1

D0801

Abstract: 15ETH06 15ETH06-1 15ETH06S IRFP250
Contextual Info: Bulletin PD-20749 rev. D 08/01 15ETH06 15ETH06S 15ETH06-1 Hyperfast Rectifier Features • • • • • trr = 22ns typ. IF AV = 15Amp VR = 600V Hyperfastfast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature

Contextual Info: 16Mbit Enhanced SDRAM Family 4Mx4, 2Mx8, 1Mx16 Preliminary Features • 100% Pin, Function, and Timing Compatible with JEDEC standard SDRAM • Integrated 8Kbit SRAM Row Cache • Synchronous Operation up to 166MHz • 22ns Row Access Latency, 10ns Column Latency

hfr12a06

Contextual Info: HFR12A06 Glass Passivated Hyper Fast Recovery Rectifier Voltage Range 600 V Current 12.0 Ampere Features ¬ Fast switching for high efficiency ¬ Low noise ¬ Trr = 22ns ¬ Low reverse leakage current ¬ High voltage super FRD ¬ PFC application TO-220AC .057 1.45

Contextual Info: PRELIMINARY Bulletin PD-21063 rev. B 11/06 15ETH06SPbF 15ETH06-1PbF Hyperfast Rectifier Features • • • • • • trr = 22ns typ. IF AV = 15Amp VR = 600V Hyperfastfast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature

SHC601

Abstract: SHC601BH DIM52 HTS-0010 G40 ps
Contextual Info: B U R R -B R O W N Ultra-High Speed S A M P L E /H O L D A M P L IF IE R FEATURES APPLICATIO N S • 100MHz SAMPLE RATE • ±0.02% MAX LINEARITY ERROR • ACQUISITION TIME 2.5V STEP : 1% FSR 8ns 0.1% FSR 12ns 0.02% FSR 22ns • 350V//US SLEW RATE • 900 FEMTO SECONDS RMS APERTURE

IR E78996

Abstract: IRFP250 15ETH06FP
Contextual Info: Bulletin PD-20765 rev. A 02/04 15ETH06FP Hyperfast Rectifier Features • • • • • • trr = 22ns typ. IF AV = 15Amp VR = 600V Hyperfast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature Fully Isolated package (VINS = 2500 VRMS)

M74HC131

Abstract: M74HC131B1R M74HC131M1R M74HC131RM13TR M74HC131TTR PO13H TSSOP16
Contextual Info: M74HC131 3 TO 8 LINE DECODER/LATCH • ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 22ns TYP. at VCC = 6V LOW POWER DISSIPATION: ICC = 4µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = V NIL = 28 % VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN)

Contextual Info: Bulletin PD-20765 rev. A 02/04 15ETH06FP Hyperfast Rectifier Features • • • • • • trr = 22ns typ. IF AV = 15Amp VR = 600V Hyperfast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature Fully Isolated package (VINS = 2500 VRMS)

KH205

Abstract: KH205AI KH205AK KH205AM KH205HXA KH205HXC transistor SMD 2n3904 PNP
Contextual Info: www.fairchildsemi.com KH205 Overdrive-Protected Wideband Op Amp Features • ■ ■ ■ ■ ■ ■ General Description -3dB bandwidth of 170MHz 0.1% settling in 22ns Complete overdrive protection Low power: 570mW 190mW at ±5V 3MΩ input resistance Output may be current limited

M74HC280

Abstract: M74HC280B1R M74HC280M1R M74HC280RM13TR M74HC280TTR TSSOP14
Contextual Info: M74HC280 9 BIT PARITY GENERATOR • ■ ■ ■ ■ ■ ■ HIGH SPEED : tPD = 22ns TYP. at VCC = 6V LOW POWER DISSIPATION: ICC =4µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = V NIL = 28 % VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN)

MTV32-400A

Abstract: D027A DTV32-1000A
Contextual Info: SCS-THOMSON MTV32-400A CRT HORIZONTAL DEFLECTION MODULATION DIODE MAIN PRODUCT CHARACTERISTICS If peak 3A VRRM 400V trr 22ns Vf 1.35V FEATURES • PRODUCT SPECIFIC TO HORIZONTAL DE­ FLECTION ■ HIGH REVERSE VOLTAGE ■ LOW SW ITCHING LOSSES DUE TO SMALL

Contextual Info: SCS-THOMSON MTV32-400A •Ht CRT HORIZONTAL DEFLECTION MODULATION DIODE For complete specifications refer to "SCHOTTKY RECTIFIER DIODES" MAIN PRODUCT CHARACTERISTICS IF peak 3A VRRM trr 400V Vf 22ns 1.35V FEATURES . PRODUCT SPECIFIC TO HORIZONTAL DE­ FLECTION

Contextual Info: HFR10A06 Glass Passivated Hyper Fast Recovery Rectifier Voltage Range 600 V Current 10.0 Ampere Features ¬ Fast switching for high efficiency ¬ Low noise ¬ Trr = 22ns ¬ Low reverse leakage current ¬ High voltage super FRD ¬ PFC application TO-220AC .057 1.45

22ns

Abstract: COLOR MARKING CODE ON DIODE
Contextual Info: SF3A300H Ultrafast Recovery Rectifier ULTRA FAST RECOVERY POWER RECTIFIER Features  Low forward voltage drop 1  Ultrafast reverse recovery time : trr Typ. =22ns  High surge capability 2  Low power loss and High efficiency 1 2 Pin Configuration

Contextual Info: HY8FR060T FAST RECOVERY EPITAXIAL DIODE 600V / 8A VF=2.1V@IF=8A, trr=22ns FEATURES • • • • • • TO-220AC UltraFast Recovery Time Soft Recovery Characteristic Low Forward Voltage Low Recovery Loss High Surge Current Capability RoHS Compliant APPLICATION

M54HC280

Abstract: M54HC280K
Contextual Info: M54HC280 RAD-HARD 9 BIT PARITY GENERATOR • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 22ns TYP. at VCC = 6V LOW POWER DISSIPATION: ICC =4µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:

2N3906 SMD

Abstract: KH205 KH205AI KH205AK KH205AM KH205HXA KH205HXC
Contextual Info: www.cadeka.com KH205 Overdrive-Protected Wideband Op Amp Features • ■ ■ ■ ■ ■ ■ General Description -3dB bandwidth of 170MHz 0.1% settling in 22ns Complete overdrive protection Low power: 570mW 190mW at ±5V 3MΩ input resistance Output may be current limited

sf3a

Contextual Info: SF3A300H Semiconductor Ultrafast Recovery Rectifier ULTRA FAST RECOVERY POWER RECTIFIER Features y Low forward voltage drop 1 y Ultrafast reverse recovery time : trr Typ. =22ns y High surge capability 1 2 y Low power loss and High efficiency 2 1 : Cathode