22L1 Search Results

22L2

Abstract: 22L4 Piezo Buzzer Buzzer pressure alarm high W-22L2 W-22L1 22l1
Contextual Info: High-output Piezo Alarm Buzzer W-22L Series Wire No. Colour 1 2 3 Black Red Yellow DIMENSIONS: Unit: mm ELECTRICAL SPECIFICATIONS : Model No. W-22L1 W-22L2 W-22L4 W-22L6 100 ~ 115/12VDC/100cm Min. Sound Pressure Level (dB) Rated Voltage (VDC) 12 Operating Voltage (VDC)

lu 2705

Contextual Info: RN2701,2702,2703 RN2704,2705,2706 RN2701 U n it in mm SW ITCHIN G , INVERTER CIRCUIT, INTERFACE CIRCUIT 2.1 ± 0.1 A N D DRIVER CIRCUIT APPLICATIONS. • , 1.2 5±0 .1 , H . •■■■«! ¥ Including Two Devices in USV (U ltra Super Mini Type w ith 5

Contextual Info: RN2710,RN2711 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2710,RN2711 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z z z z z Including two devices in USV (ultra super mini type with 5 leads)

Contextual Info: SILICON PNP EPITAXIAL TYPE RN2701-RN2706 U n it in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • 1 .25 Í0 .1 J Including Two Devices in USV U ltra Super Mini Type w ith 5 >-« leads ©o +I • W ith B uilt-in B ias Resistors

D 1709 N 22

Contextual Info: SILICON NPN EPITAXIAL TYPE RN1707-RN1709 U n it in m m SW ITC H IN G , INV ERTER CIRCUIT, IN TERFAC E C IRCU IT A N D D R IV ER C IRC U IT A PPLICA TIO N S. • In c lu d in g Two D evices in U SV U ltra S u p e r M ini T ype w ith 5 leads • W ith B u ilt-in B ias R esistors

Contextual Info: SSM5N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N05FU High Speed Switching Applications Unit: mm • Optimum for high-density mounting in small packages • Low on-resistance: Ron = 0.8 Ω max (@VGS = 4 V) : Ron = 1.2 Ω (max) (@VGS = 2.5 V)

Contextual Info: 2SC4944 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4944 Audio Frequency General Purpose Amplefier Applications • Small package (dual type) • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • High hFE: hFE = 120 to 400

IDT39C861

Abstract: IDT39C862 IDT39C863 IDT39C864
Contextual Info: i f i t H IG H - P E R F O R M A N C E C M O S BUS TR AN S CEIV E RS Im ID T 3 9 C 8 6 1 -6 4 In t e g r a t e d D e v ic e T e c h n o lo g y . Inc FEATURES: DESCRIPTION: • Equivalent lo AMD's Am29861-64 Bipolar Registers in pinout/function, speeds and output drive over full

2SA1873

Abstract: 2SC4944
Contextual Info: 2SA1873 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1873 Audio Frequency General Purpose Amplifier Applications • Small package (dual type) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • High hFE • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)

2SA1873

Abstract: 2SC4944
Contextual Info: 2SC4944 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4944 ○ 低周波増幅用 単位: mm • ウルトラスーパーミニ (5 端子) パッケージに 2 素子を内蔵しています。 • 2 素子間のペア性が良い。

RN1130F

Abstract: RN2130F RN47A6
Contextual Info: RN47A6 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A6 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (5 pin)

Contextual Info: SSM5P15FU 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM5P15FU ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm 2.1±0.1 • 小型パッケージで高密度実装に最適 記 号 定 格 単位 VDS −30

Contextual Info: RN47A1 東芝トランジスタ シリコンNPN • PNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN47A1 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm •

RN1707

Abstract: RN1708 RN1709 RN2707 RN2709
Contextual Info: RN1707~RN1709 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1707,RN1708,RN1709 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in USV (ultra super mini type with 5 leads) z With built-in bias resistors

RN1707

Abstract: RN1709 RN2707 RN2708 RN2709
Contextual Info: RN2707~RN2709 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2707,RN2708,RN2709 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors

RN1701

Abstract: RN2701 RN2702 RN2703 RN2704 RN2705 RN2706
Contextual Info: RN2701~RN2706 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2701,RN2702,RN2703,RN2704,RN2705,RN2706 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Including two devices in USV (ultra super mini type with 5 leads)

RN2707

Abstract: RN1707 RN1709 RN2708 RN2709
Contextual Info: RN2707~RN2709 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2707,RN2708,RN2709 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors

Contextual Info: TO SH IBA HN4K03JU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HN4K03JU Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS High Input Impedance Low Gate Threshold Voltage : V^h = 0.5—1.5 V Excellent Switching Times Small Package

Contextual Info: RN2707~RN2709 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2707,RN2708,RN2709 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in USV (ultra super mini type with 5 leads) l With built-in bias resistors

TOSHIBA Transistor Silicon PNP Epitaxial Type

Abstract: RN2714
Contextual Info: RN2714 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2714 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Two devices incorporated in a USV (5-pin ultra-super-mini-type) Built-in bias resistors Simplified circuit design

Contextual Info: TOSHIBA RN1701 ~R N 1706 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1701, RN1702, RN1703, RN1704, RN1705, RN1706 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. 1 .2 5 1 -0 .1 -m- »

HN4B01JE

Contextual Info: HN4B01JE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN4B01JE Unit: mm Audio Frequency General Purpose Amplifier Applications Q1:High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

MARKING 25J

Abstract: marking IAY 2SA1873 2SC4944
Contextual Info: TOSHIBA 2SC4944 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4944 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2 110.1 1.25 ± 0.1 . Small Package (Dual Type) High Voltage and High Current : V0EO-5OV, 10 = 150mA (Max.)